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    TRANSISTOR ALG Search Results

    TRANSISTOR ALG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ALG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RN1110FS

    Abstract: RN1111FS RN2110FS RN2111FS
    Text: RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN1110FS RN1111FS RN1110FS, RN2110FS, RN2111FS RN1111FS RN2110FS RN2111FS

    Untitled

    Abstract: No abstract text available
    Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN49A6FS

    RN1112FS

    Abstract: RN1113FS RN2112FS RN2113FS
    Text: RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN1112FS RN1113FS RN1112FS, RN2112FS, RN2113FS RN1113FS RN2112FS RN2113FS

    Untitled

    Abstract: No abstract text available
    Text: RN49A6FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN49A6FS Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN49A6FS

    RN4993FS

    Abstract: No abstract text available
    Text: RN4993FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4993FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.1±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN4993FS RN4993FS

    K1 transistor datasheets

    Abstract: HCPL-0452 HCPL-0500 HCPL-0501 HCPL0500
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS SINGLE-CHANNEL HCPL-0500 HCPL-0501 DESCRIPTION The HCPL-0500, HCPL-0501 and HCPL-0452 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact 8-pin smalloutline package.


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    PDF HCPL-0500 HCPL-0501 HCPL-0500, HCPL-0501 HCPL-0452 E90700) DS300393 K1 transistor datasheets HCPL-0452 HCPL-0500 HCPL0500

    RN4984FS

    Abstract: No abstract text available
    Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN4984FS RN4984FS

    diode RU 3AM

    Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
    Text: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)


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    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


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    PDF M63840FP 500mA M63840FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY

    M54585FP

    Abstract: 24 "transistor array"
    Text: <TRANSISTOR ARRAY> M54585FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SINK TYPE DESCRIPTION M54585FP is eight-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current


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    PDF M54585FP 500mA M54585FP 500mA) 24 "transistor array"

    Untitled

    Abstract: No abstract text available
    Text: RN4984FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4984FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.


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    PDF RN4984FS

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M63840KP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840KP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform


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    PDF M63840KP 500mA M63840KP 500mA) 20P2F-A

    M54513FP

    Abstract: M5451
    Text: <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated NC circuits perform high-current driving with extremely low input-


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    PDF M54513FP M54513FP M5451

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


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    PDF RN1112MFV RN1113MFV

    HCPL-0452

    Abstract: HCPL-0500 HCPL-0501 HCPL0452 HCPL0500
    Text: SINGLE CHANNEL HIGH SPEED TRANSISTOR OPTOCOUPLERS HCPL-0452 HCPL-0500 HCPL-0501 DESCRIPTION The HCPL-0500, HCPL-0501 and HCPL-0452 optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact 8-pin smalloutline package.


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    PDF HCPL-0452 HCPL-0500 HCPL-0501 HCPL-0500, HCPL-0501 HCPL-0452 E90700) HCPL-0500 HCPL0452 HCPL0500

    IEC60747-5-5

    Abstract: HCPL2531M
    Text: Single-Channel: 6N135M, 6N136M, HCPL4503M Dual-Channel: HCPL2530M, HCPL2531M High Speed Transistor Optocouplers Features Description • High Speed –1 MBit/s The HCPL4503M, 6N135M, 6N136M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135M, 6N136M, HCPL4503M HCPL2530M, HCPL2531M HCPL4503M, HCPL2531M IEC60747-5-5

    Untitled

    Abstract: No abstract text available
    Text: Single-Channel: 6N135M, 6N136M, HCPL4503M Dual-Channel: HCPL2530M, HCPL2531M High Speed Transistor Optocouplers Features Description • High Speed –1 MBit/s The HCPL4503M, 6N135M, 6N136M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.


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    PDF 6N135M, 6N136M, HCPL4503M HCPL2530M, HCPL2531M HCPL4503M, HCPL2531M

    Untitled

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54513FP 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE DESCRIPTION PIN CONFIGURATION M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semicon- ductor integrated circuits perform high-current driving with extremely low inputcurrent supply.


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    PDF M54513FP M54513FP 20P2N-A

    HCPL0500

    Abstract: HCPL0452 HCPL0453 HCPL0501 HCPL0530 HCPL0531 HCPL0534
    Text: HIGH SPEED TRANSISTOR OPTOCOUPLERS Single Channel: Dual Channel: HCPL0452 HCPL0530 HCPL0453 HCPL0531 HCPL0500 HCPL0534 HCPL0501 DESCRIPTION The HCPL05XX, and HCPL04XX optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor housed in a compact 8-pin small outline package.


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    PDF HCPL0452 HCPL0530 HCPL0453 HCPL0531 HCPL0500 HCPL0534 HCPL0501 HCPL05XX, HCPL04XX HCPL0500 HCPL0452 HCPL0453 HCPL0501 HCPL0530 HCPL0531 HCPL0534

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: <TRANSISTOR ARRAY> M54562FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M54562FP is an eight-circuit output-sourcing darlington transistor array. The circuits are made of PNP and NPN transistors. This semiconductor integrated circuit performs high


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    PDF M54562FP 500mA M54562FP 500mA) 20P2N-A DARLINGTON TRANSISTOR ARRAY

    ULN2083A-1

    Abstract: kd 617 ULN 232 KD transistor transistor KD 617 ULN-2083A-1 ULN2031A Transistor Array differential amplifier ULN-2031A
    Text: ALLEGRO MICROSYSTEMS 8 5 1 4 0 1 9 S P RA GU E. INC =53 D • 0S0M33Ô S E M I C O N D S / ICS 0003024 3 ■ ALGR 9 3 D 03824J ULN-2083A-1 TRANSISTOR ARRAY ULN-2083A-1 TRANSISTOR ARRAY This device is a general-purpose transistor array for use in medium-current switching and differential


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    PDF 0S0M33Ô 03824J) ULN-2083A-1 ULN-2083A ULN-2031A LN-2086A, ULN2083A-1 kd 617 ULN 232 KD transistor transistor KD 617 ULN2031A Transistor Array differential amplifier

    electronic organ

    Abstract: ALLEGRO M I C R O S Y S T E M S INC
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. D 13 0504333 0003017 b • ALGR 93D 038173>'7^<<?«2S' S E M I C O N D S / ICS ULN-2047A TRANSISTOR ARRAY ULN-2047A TRANSISTOR ARRAY Three Differential Amplifiers ' T ’YPE ULN-2047A is a silicon NPN multiple transistor array comprising three independent dif­


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    PDF ULN-2047A 16-lead 16-pin -2031A ULN-2086A, ULS-2045H ULS-2083H, electronic organ ALLEGRO M I C R O S Y S T E M S INC

    C 2944 transistor

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC ^3 D • 05014330 000373=1 1 ■ ALGR T-91-01 PROCESS VRB Process VRB NPN Small-Signal Transistor Process VRB is an NPN double-diffused silicon epitaxial planar transistor designed for generalpurpose amplifier and switching circuits.


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    PDF 05D433S T-91-01 T-9U01 -H08J C 2944 transistor

    NPN Transistor BC548B

    Abstract: BC548 BC238B npn bc337-40 npn transistor
    Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB


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    PDF T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor