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    TRANSISTOR AMPLIFIER 3 GHZ 10 WATTS Search Results

    TRANSISTOR AMPLIFIER 3 GHZ 10 WATTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AMPLIFIER 3 GHZ 10 WATTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c3909

    Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF APPNOTE-006 transistor c3909 pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor

    3 w RF POWER TRANSISTOR 2.7 ghz

    Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
    Text: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5


    Original     		PDF PHA2731-190M Amplifier--190 PHA2731-190M 3 w RF POWER TRANSISTOR 2.7 ghz radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit 190-W

    transistor p98

    Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
    Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC


    Original     		PDF CGH40025F APPNOTE-006 transistor p98 P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16030 MRF16030 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test

    ADC 50 Ghz

    Abstract: MRF16030
    Text: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz


    Original     		PDF MRF16030/D MRF16030 ADC 50 Ghz MRF16030

    MRF16006

    Abstract: No abstract text available
    Text: Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz


    Original     		PDF MRF16006/D MRF16006 MRF16006

    QB-925

    Abstract: No abstract text available
    Text: Model # QB-925 8 Watt Hybrid Driver Amplifier 2.0 – 6.0 GHz, 4 Watt Hybrid Driver Amplifier • High Saturated Output Power to 10 Watts • Rugged GaN Technology • Balanced Output Configuration for Optimum Return Loss • 2 Stage Amplifier with Independent Gate & Drain Bias Controls


    Original     		PDF QB-925 QB-925

    transistor amplifier 3 ghz 10 watts

    Abstract: 10 watt power transistor
    Text: 1720 - 5A 5 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1720-5A is a COMMON BASE transistor capable of providing 5 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes


    Original     		PDF 720-5A transistor amplifier 3 ghz 10 watts 10 watt power transistor

    High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications

    Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
    Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and


    Original     		PDF

    motorola sps transistor

    Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
    Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16030/D MRF16030 MRF16030 DEVICEMRF16030/D motorola sps transistor motorola 572 transistor Motorola 1600 395C-01 sps transistor

    TRANSISTOR motorola 838

    Abstract: motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600
    Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz


    Original     		PDF MRF16030/D MRF16030 TRANSISTOR motorola 838 motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz


    Original     		PDF MRF16030/D MRF16030 MRF16030/D*

    transistor 955 MOTOROLA

    Abstract: MRF16006
    Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


    Original     		PDF MRF16006/D MRF16006 MRF16006 MRF16006/D* MRF16006/D transistor 955 MOTOROLA

    6 watts resistor

    Abstract: MRF16006 motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz


    Original     		PDF MRF16006/D MRF16006 MRF16006/D* 6 watts resistor MRF16006 motorola rf Power Transistor

    8801

    Abstract: No abstract text available
    Text: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    Original     		PDF 1-877-GOLDMOS 1301-PTB 8801

    1718-32L

    Abstract: No abstract text available
    Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier


    Original     		PDF 1718-32L 1718-32L

    1920AB60

    Abstract: max6011
    Text: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS


    Original     		PDF 1920AB60 1920AB60 max6011

    1920A12

    Abstract: No abstract text available
    Text: 1920A12 12 Watts PEP, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS


    Original     		PDF 1920A12 1920A12

    Granberg

    Abstract: No abstract text available
    Text: Ericsson Components 20125,100 Watts at 2 Ghz! Prepared by Cynthia Blair, Ericsson Components With the advent of PCS, demands for high power amplifiers working at 2 GHz have increased. Devices with larger peak power handling capability, along with a high degree of linearity, are needed for any


    OCR Scan     		PDF 500mA Granberg

    acrian RF POWER TRANSISTOR

    Abstract: PU 391 acrian inc
    Text: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold


    OCR Scan     		PDF U14Q9 400mA, D0D1411 10nfd@ acrian RF POWER TRANSISTOR PU 391 acrian inc

    PH1819-30

    Abstract: PH1819
    Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching


    OCR Scan     		PDF PH1819-30 PH1819-30 PH1819

    transistor 20201

    Abstract: jarvis
    Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power


    OCR Scan     		PDF

    PH2735

    Abstract: No abstract text available
    Text: Aß Linear Power Transistor PH2735-5CE 5 Watts, 2.70-3.50 GHz Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB Operation Common Emitter Configuration Internal Input and Output Impedance Matching


    OCR Scan     		PDF PH2735-5CE PH2735