transistor c3909
Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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APPNOTE-006
transistor c3909
pt 2358
Voltmeter
Gan hemt transistor x band
of38dBm
transistor DB p16
CGH40025F
ID4002
Cree Microwave
Gan hemt transistor
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3 w RF POWER TRANSISTOR 2.7 ghz
Abstract: radar amplifier s-band 2.7 2.9 GHZ 300 watts amplifier s-band 100 watts transistor s-band 2.7Ghz rc circuit PHA2731-190M 190-W
Text: PHA2731-190M Radar Pulsed Power Amplifier—190 Watts 2.7—3.1 GHz, 200µs Pulse, 10% Duty Outline Drawing1 Features • • • • • • Input and Output matched to 50Ω RC bias circuit included Dual NPN Silicon class C power transistors Soft substrate εr = 10.5
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PHA2731-190M
Amplifier--190
PHA2731-190M
3 w RF POWER TRANSISTOR 2.7 ghz
radar amplifier s-band 2.7 2.9 GHZ
300 watts amplifier s-band
100 watts transistor s-band
2.7Ghz rc circuit
190-W
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transistor p98
Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Text: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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CGH40025F
APPNOTE-006
transistor p98
P99 transistor
transistor nc p79
p88 transistor
Gan hemt transistor
100 p38 transistor
transistor be p88
p115
WR35
1/SMD bm p57
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test equivalent transistor rf "30 mhz"
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030
MRF16030
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
equivalent transistor rf "30 mhz"
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2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
Abstract: 2.4 ghz transmitter rf test
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16006
MRF16006
2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC
2.4 ghz transmitter rf test
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ADC 50 Ghz
Abstract: MRF16030
Text: Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz
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MRF16030/D
MRF16030
ADC 50 Ghz
MRF16030
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MRF16006
Abstract: No abstract text available
Text: Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz
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MRF16006/D
MRF16006
MRF16006
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QB-925
Abstract: No abstract text available
Text: Model # QB-925 8 Watt Hybrid Driver Amplifier 2.0 – 6.0 GHz, 4 Watt Hybrid Driver Amplifier • High Saturated Output Power to 10 Watts • Rugged GaN Technology • Balanced Output Configuration for Optimum Return Loss • 2 Stage Amplifier with Independent Gate & Drain Bias Controls
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QB-925
QB-925
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transistor amplifier 3 ghz 10 watts
Abstract: 10 watt power transistor
Text: 1720 - 5A 5 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1720-5A is a COMMON BASE transistor capable of providing 5 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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720-5A
transistor amplifier 3 ghz 10 watts
10 watt power transistor
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High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and
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motorola sps transistor
Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030/D
MRF16030
MRF16030
DEVICEMRF16030/D
motorola sps transistor
motorola 572 transistor
Motorola 1600
395C-01
sps transistor
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TRANSISTOR motorola 838
Abstract: motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600
Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz
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MRF16030/D
MRF16030
TRANSISTOR motorola 838
motorola diode 739
MRF16030
motorola rf Power Transistor
Motorola 1600
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz
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MRF16030/D*
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transistor 955 MOTOROLA
Abstract: MRF16006
Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16006/D
MRF16006
MRF16006
MRF16006/D*
MRF16006/D
transistor 955 MOTOROLA
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6 watts resistor
Abstract: MRF16006 motorola rf Power Transistor
Text: MOTOROLA Order this document by MRF16006/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz
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MRF16006/D
MRF16006
MRF16006/D*
6 watts resistor
MRF16006
motorola rf Power Transistor
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8801
Abstract: No abstract text available
Text: e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power
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1-877-GOLDMOS
1301-PTB
8801
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1718-32L
Abstract: No abstract text available
Text: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier
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1718-32L
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1920AB60
Abstract: max6011
Text: 1920AB60 60 Watts PEP, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1930-1990 MHz. This transistor is specifically designed for LINEAR PERSONAL PCS
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1920AB60
1920AB60
max6011
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1920A12
Abstract: No abstract text available
Text: 1920A12 12 Watts PEP, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS
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1920A12
1920A12
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Granberg
Abstract: No abstract text available
Text: Ericsson Components 20125,100 Watts at 2 Ghz! Prepared by Cynthia Blair, Ericsson Components With the advent of PCS, demands for high power amplifiers working at 2 GHz have increased. Devices with larger peak power handling capability, along with a high degree of linearity, are needed for any
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500mA
Granberg
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acrian RF POWER TRANSISTOR
Abstract: PU 391 acrian inc
Text: GENERAL 2010 DESCRIPTION 10 WATT - 28 VOLTS 2000 MHZ The 2010 is a common base transistor capable of providing 10 watts of CW RF output power in the 2000 MHz band. This hermetically sealed transistor is specifically designed for Class C amplifier applications. It utilizes gold
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U14Q9
400mA,
D0D1411
10nfd@
acrian RF POWER TRANSISTOR
PU 391
acrian inc
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PH1819-30
Abstract: PH1819
Text: Afa Wireless Power Transistor PH 1819-30 30 Watt, 1.78-1.90 GHz Features Outline Drawing • Designed for Linear Amplifier Applications • -30 dBc Typ 3rd IMD at 30 Watts PEP • Common Emitter Class AB Operation • Internal Input and Output Impedance Matching
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PH1819-30
PH1819-30
PH1819
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transistor 20201
Abstract: jarvis
Text: ERICSSON ^ PTB 20176 5 Watts, 1.78-1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power
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PH2735
Abstract: No abstract text available
Text: Aß Linear Power Transistor PH2735-5CE 5 Watts, 2.70-3.50 GHz Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB Operation Common Emitter Configuration Internal Input and Output Impedance Matching
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PH2735-5CE
PH2735
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