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    TRANSISTOR AOD414 Search Results

    TRANSISTOR AOD414 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AOD414 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOD4144

    Abstract: No abstract text available
    Text: AOD4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology


    Original     		PDF AOD4144 AOD4144 O-252 Gate-SourOD4144

    AOD4140

    Abstract: No abstract text available
    Text: AOD4140 TM N-Channel SDMOS POWER Transistor General Description Features The AOD4140 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology


    Original     		PDF AOD4140 AOD4140 O-252

    AOD4144

    Abstract: AOI4144 aod41
    Text: AOD4144/AOI4144 N-Channel SDMOSTM Power Transistor General Description Features The AOD4144/AOI4144 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology


    Original     		PDF AOD4144/AOI4144 AOD4144/AOI4144 O-251A OI4144 AOD4144 AOI4144 aod41

    1E05

    Abstract: AOD4142
    Text: AOD4142 N-Channel SDMOSTM POWER Transistor General Description Features The AOD4142 is fabricated with SDMOSTM trench technology that combines excellent RDS ON with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited


    Original     		PDF AOD4142 AOD4142 O-252 1E05

    AOD414L

    Abstract: AOD414
    Text: Rev 4:Nov 2004 AOD414, AOD414L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally


    Original     		PDF AOD414, AOD414L( AOD414 AOD414L O-252 AOD414L

    AOD414

    Abstract: TRANSISTOR AOD414 semiconductor A 6060
    Text: AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD414 AOD414 O-252 TRANSISTOR AOD414 semiconductor A 6060

    Untitled

    Abstract: No abstract text available
    Text: AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD414 AOD414 27ABC

    TRANSISTOR AOD414

    Abstract: No abstract text available
    Text: AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD414 AOD414L O-252 AOD414 TRANSISTOR AOD414

    TRANSISTOR AOD414

    Abstract: No abstract text available
    Text: AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD414 AOD414 O-252 TRANSISTOR AOD414

    d414

    Abstract: d414 transistor transistor d414 D-414 alpha omega D414 TRANSISTOR AOD414 AOD414
    Text: July 2003 AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD414 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD414 AOD414 O-252 d414 d414 transistor transistor d414 D-414 alpha omega D414 TRANSISTOR AOD414

    AOD4104

    Abstract: AOD4140
    Text: AOD4104 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4104 uses advanced trench technology to provide excellent RDS ON , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AOD4104 AOD4104 O-252 AOD4140 AOD4140

    pin configuration NPN transistor c828

    Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF 875ule. 1000pF 200mils BCM5705M NO266 pin configuration NPN transistor c828 w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode

    ZENER D30

    Abstract: aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF 875C38 1/16W 1000pF 200mils BCM5705M NO266 ZENER D30 aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458

    speedtech p65

    Abstract: foxconn ag20 taiyo transistor c107 m Socket AM2 Floppy connector 34 pin IDC to usb fic at11 d51 6pin AOD404 AO3401
    Text: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :


    Original     		PDF 1/16W SMT0603 1000pF SMT0603 200mils BCM5705M NO266 speedtech p65 foxconn ag20 taiyo transistor c107 m Socket AM2 Floppy connector 34 pin IDC to usb fic at11 d51 6pin AOD404 AO3401