TRANSISTOR APPLICATIONS HF 12 V 150 WATT Search Results

TRANSISTOR APPLICATIONS HF 12 V 150 WATT Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN
D1U54T-M-2500-12-HB4C	Murata Manufacturing Co Ltd	2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR
D1U74T-W-1600-12-HB4AC	Murata Manufacturing Co Ltd	AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs

TRANSISTOR APPLICATIONS HF 12 V 150 WATT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:	Original	NTE236 27MHz, O220AB NTE236 O220AB 27MHz	PDF
transistor SG 14 Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de fense and commercial markets can take advantage of the	OCR Scan	TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR	PDF
10205 transistor Abstract: JF18004 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS	OCR Scan	MJE/MJF18004 O-220 MJF18004, AN1040. 10205 transistor JF18004	PDF
JE180 Abstract: transistor 3707 switching transistor JF18002 3704 transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE18002* M JF18002* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications "Motorola Preferred Dovtc« POW ER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS	OCR Scan	MJE/MJF18002 MJF18002, AN1040. JE180 transistor 3707 switching transistor JF18002 3704 transistor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in	OCR Scan	BUH50/D BUH50 21A-06 O-220AB	PDF
TRIMMER capacitor 5-60 pF Abstract: No abstract text available Text: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and	OCR Scan	R35-3 TRIMMER capacitor 5-60 pF	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25L MRFE6VS25LR5	PDF
D260-4118-0000 Abstract: 0119A 0190A Text: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to	Original	MRFE6VS25L MRFE6VS25LR5 D260-4118-0000 0119A 0190A	PDF
30175 CW Abstract: No abstract text available Text: Afa MOSFET Power Transistor DU 1230V Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 28 VOLTS POUT = 130 WATTS GP = 12 dB MINIMUM IMD -30 dB GOLD METALLIZATION	Original	MS1078 MS1078	PDF
2SC2166 Abstract: 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. • • • • 03.6 9.1 ± 0 .7	OCR Scan	2SC2166 2SC2166 27MHz O-220 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent	PDF
Untitled Abstract: No abstract text available Text: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP	OCR Scan	Curre195 G-200, BCP56 BAV99	PDF
S100 transistor Abstract: T30 transistor Text: M O S FET P o w e r Transistor Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization	OCR Scan	5b42205 S100 transistor T30 transistor	PDF
transistor 936 Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100 Text: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization	OCR Scan	DU2840V 5b422D5 C7C9C12C14 C10C13C15 5b4BE05 transistor 936 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100	PDF

2sc1969 Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm	OCR Scan	2SC1969 2SC1969 27MHz O-220 27MHz. 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .	OCR Scan	BUD44D2 St254 MTP8P10 500nH	PDF
2SC1969 Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'	OCR Scan	2SC1969 2SC1969 27MHz O-220 27MHz. 150mA	PDF
2SC1945 Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945 Text: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2	OCR Scan	2SC1945 27MHz O-220 27MHz. T-30E TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945	PDF
erf7530 Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR Text: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS	Original	ERF7530 30MHz ERF7530 O-218 30MHz 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR	PDF
BUV20 Abstract: No abstract text available Text: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.	OCR Scan	BUV20/D BUV20 BUV20	PDF
L147F Abstract: mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U M 47* BUL147F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications Moton>la Prf«rrd D vic* POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state-of-the-art die designed	OCR Scan	BUL147/BUL147F O-220 O-220 BUL147F, 22mperature L147F mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450	PDF
2N649 Abstract: No abstract text available Text: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N 6498* High Voltage NPN Silicon Power Transistors ‘ Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, sw itching regulators and lin e -o p e ra te d	OCR Scan	2N6497/D 2N6497 2N6498 2N6498 2N6497 21A-06 O-220AB 2N649	PDF
2sc2166 Abstract: 2SC2166 equivalent Text: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES	OCR Scan	2SC2166 2SC2166 2SC2166 equivalent	PDF
Untitled Abstract: No abstract text available Text: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated	OCR Scan		PDF

TRANSISTOR APPLICATIONS HF 12 V 150 WATT Search Results

TRANSISTOR APPLICATIONS HF 12 V 150 WATT Result Highlights (5)

TRANSISTOR APPLICATIONS HF 12 V 150 WATT Datasheets Context Search

Untitled

transistor SG 14

10205 transistor

JE180

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TRIMMER capacitor 5-60 pF

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D260-4118-0000

30175 CW

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2SC2166

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S100 transistor

transistor 936

2sc1969

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2SC1969

2SC1945

erf7530

BUV20

L147F

2N649

2sc2166

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