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    TRANSISTOR AS PLANAR PEP Search Results

    TRANSISTOR AS PLANAR PEP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR AS PLANAR PEP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    choke coil

    Abstract: SD1729 TH416
    Text: SD1729 TH416 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 130 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1729 BRANDING TH416 PIN CONNECTION


    Original     		PDF SD1729 TH416) TH416 SD1729 choke coil TH416

    TH430

    Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728
    Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar


    Original     		PDF SD1728 TH430) SD1728 TH430 TH430 SD1728 M177 TH430 D Transistor TH430 D M177

    SD1730

    Abstract: Planar choke TH560 choke C20 C24
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 35ise Planar choke TH560 choke C20 C24

    SD1730

    Abstract: TH560 arco
    Text: SD1730 TH560 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD −30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN .500 4 LFL (M174) epoxy sealed ORDER CODE SD1730 BRANDING


    Original     		PDF SD1730 TH560) -30dB TH560 SD1730 TH560 arco

    SD1726

    Abstract: THA15 OF IC 318 556 b
    Text: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMITTER • GOLD METALLIZATION M174 epoxy sealed • POUT = 150 W PEP MIN. WITH 14 dB GAIN ORDER CODE SD1726 DESCRIPTION


    Original     		PDF SD1726 THA15) IMD-30 SD1726 THA15 THA15 OF IC 318 556 b

    4C6 ferrite

    Abstract: ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731 SD1731-14 ssb transformer
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731-14


    Original     		PDF SD1731-14 ST448) ST448 SD1731 4C6 ferrite ferrite core 4c6 ferrite core transformer pin connection ST448 4C6 SPECIFICATIONS SD1731 datasheet TORIOD SD1731-14 ssb transformer

    Untitled

    Abstract: No abstract text available
    Text: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMITTER • GOLD METALLIZATION M174 epoxy sealed • POUT = 150 W PEP MIN. WITH 14 dB GAIN ORDER CODE SD1726 DESCRIPTION


    Original     		PDF SD1726 THA15) IMD-30 SD1726 THA15

    arco

    Abstract: THX15 M164 SD1727 Arco 426 arco 427 1nF 63V 5 2.5mm
    Text: SD1727 THX15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 150 W PEP MIN. WITH 14 dB GAIN .500 4LFL (M164) epoxy sealed ORDER CODE SD1727 BRANDING THX15 PIN CONNECTION


    Original     		PDF SD1727 THX15) THX15 SD1727 arco THX15 M164 Arco 426 arco 427 1nF 63V 5 2.5mm

    TH430

    Abstract: arco 429 diode gp 429 SD1728 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e
    Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION


    Original     		PDF SD1728 TH430) TH430 SD1728 TH430 arco 429 diode gp 429 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e

    ferrite core transformer pin connection

    Abstract: power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731 SD1731-14 ST448
    Text: SD1731-14 ST448 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 250 W PEP WITH 12 dB GAIN .50 0 4LF L (M17 4 ) epoxy sealed O R DE R CODE


    Original     		PDF SD1731-14 ST448) ST448 SD1731 ferrite core transformer pin connection power transformer from malaysia 4C6 ferrite FERRITE TRANSFORMER HF SSB APPLICATIONS planar impedance transformer planar transformer SD1731-14 ST448

    TH562

    Abstract: TORIOD SD1731 th562 c ferrite core transformer pin connection IE transformer core 47UF63V
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1731 BRANDING TH562 PIN CONNECTION


    Original     		PDF SD1731 TH562) TH562 SD1731 TH562 TORIOD th562 c ferrite core transformer pin connection IE transformer core 47UF63V

    arco 427

    Abstract: TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615
    Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER POUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION


    Original     		PDF SD1728 TH430) SD1728 TH430 arco 427 TRANSISTOR AS PLANAR PEP arco 429 SD1728 M177 arco 4615

    TH416

    Abstract: SD1729
    Text: SD1729 TH416 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 28 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 130 W PEP WITH 12 dB GAIN DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon


    Original     		PDF SD1729 TH416) SD1729 TH416

    TH562

    Abstract: th562 c 4C6 ferrite SD1731 ferrite core transformer pin connection 4C6 SPECIFICATIONS
    Text: SD1731 TH562 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION POUT = 220 W PEP WITH 13 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CO DE SD1731 BRANDING TH562 PIN CONNECTION


    Original     		PDF SD1731 TH562) TH562 SD1731 TH562 th562 c 4C6 ferrite ferrite core transformer pin connection 4C6 SPECIFICATIONS

    THX15

    Abstract: arco 427 CLASS AB M164 SD1727 ab 60 marking 0555D
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		PDF SD1727 THX15) SD1727 THX15 arco 427 CLASS AB M164 ab 60 marking 0555D

    transistor k 4213

    Abstract: STMicroelectronics marking code date th562 SD1731 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet
    Text: SD1731 TH562 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 220 W PEP WITH 13 dB GAIN DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar


    Original     		PDF SD1731 TH562) SD1731 transistor k 4213 STMicroelectronics marking code date th562 Date Code Marking STMicroelectronics FERRITE TRANSFORMER HF SSB APPLICATIONS k 4213 planar impedance transformer SD1731 datasheet

    Arco 426

    Abstract: No abstract text available
    Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION


    Original     		PDF SD1727 THX15) SD1727 Arco 426

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb53^31 OOE^SH? BLW 9 7 b'lE D IAPX Jl H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed fo r use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance


    OCR Scan     		PDF

    2sc2099

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2099 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE QQ Unit in mm 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. LOW SUPPLY VOLTAGE USE Specified 12.5V, 28MHz Characteristics Output Power Po = 20W pEP Gtïr = 12dB (Min.) Power Gain rj Q = 35% (Min.)


    OCR Scan     		PDF 2SC2099 30MHz 28MHz --30dB 961001E 2sc2099

    Untitled

    Abstract: No abstract text available
    Text: /T T ^ 7 / S G S -T H O M S O N SD1730 TH560 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ . OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD -30dB EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 12 dB GAIN


    OCR Scan     		PDF SD1730 TH560) -30dB SD1730

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 i. SD1731-14 ST448 •ILO RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS PRELIMINARY DATA OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P o u t = 250 W PEP WITH 12 dB GAIN .500 4LFL (M 174) epoxy sealed


    OCR Scan     		PDF SD1731-14 ST448) SD1731 ST448 0D77b3b

    Untitled

    Abstract: No abstract text available
    Text: Œ fï . SG S-IHO M SON l[Li ïï[ÊMO©S SD1731 TH562 RF & M ICRO W AVE TR AN SISTO R S HF SSB APPLIC ATIO N S . OPTIMIZED FOR SSB • 30 MHz ■ 50 VOLTS . EFFICIENCY 40% . COMMON EMITTER ■ GOLD METALLIZATION > P o u t = 220 W PEP WITH 13 dB GAIN PIN CONNECTION


    OCR Scan     		PDF SD1731 TH562) SD1731

    Untitled

    Abstract: No abstract text available
    Text: f Z #7. SGS-THOMSON KM@[j[L[i TE»n©§_ SD 1726 T H A I 5 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD -3 0 dB COMMON EMITTER GOLD METALLIZATION P out = 150 W PEP MIN. WITH 14 dB GAIN


    OCR Scan     		PDF SD1726

    S904

    Abstract: 1729T TH416
    Text: f Z 7 SGS-THOMSON * 7# . KM @ [j[L[i TE»n© §_ SD 1729 TH 416 RF & MICROWAVE TRANSISTO RS _ HF SSB APPLICATIONS • ■ ■ ■ ■ . ■ OPTIMIZED FOR SSB 30 MHz 28 VOLTS IMD -30 dB COMMON EMITTER GOLD METALLIZATION P out = 130 W PEP WITH 12 dB GAIN


    OCR Scan     		PDF SD1729 S904 1729T TH416