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    TRANSISTOR B 1117 Search Results

    TRANSISTOR B 1117 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 1117 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


    OCR Scan     		LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56 PDF

    transistor d 1991 ar

    Abstract: No abstract text available
    Text: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		BLY91C/01 T122F1 OT122F bb53131 transistor d 1991 ar PDF

    BFR101A

    Abstract: BFR101 BFR101B
    Text: • b b 5 3 T 3 1 □ □ 2 5 1 CÌ0 fisi B I A P X b?E ]> N AMER P H I L I P S / D I S C R E T E BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


    OCR Scan     		bb53T31 251cià BFR101A BFR101B BFR101 BFR101A BFR101B PDF

    1117 S Transistor

    Abstract: sot122f
    Text: N AUER PH I L I PS /D IS CR ETE b'îE D • ^53131 002^722 07M H A P X Philips Sem iconductors Product_gpgcitication BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		BLY91C/01 OT122F OT122F_ 1117 S Transistor sot122f PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 □ D 3 S l cifi flSl HIAPX N APIER PHILIPS/D ISCR ETE | BFR101A BFR101B b?E J> _ ^ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel silicon junction field-effect transistor, designed primarily for use as a source


    OCR Scan     		bbS3T31 BFR101A BFR101B PDF

    BLY91

    Abstract: BH 1117 F Silicon Epitaxial Planar Transistor philips
    Text: . j , • 71 10 62 b 0 0 b3 b n 552 «PHIN D , . Productspecificati Philips Semiconductors_ £_ PHILIPS INT ER NA TI ON AL tSE D ” ' " " VHF power transistor " " " BLY91 C/01 PIN CONFIGURATION DESCRIPTION _


    OCR Scan     		711062b 00b3bn BLY91C/01 lthasaSOT122F -SOT122F MB8012 BLY91 BH 1117 F Silicon Epitaxial Planar Transistor philips PDF

    BT 816 transistor

    Abstract: PA 1515 transistor 9921 transistor
    Text: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure


    OCR Scan     		BFS540 OT323 OT323 OT323. BT 816 transistor PA 1515 transistor 9921 transistor PDF

    iw 1688

    Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
    Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency


    OCR Scan     		GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331 PDF

    1117 FG

    Abstract: 2N4864 PG1101 PG1102 PG1103 PG1104 PG1105 PG1106 PG1108 PG1109
    Text: '•M.- : 043592 A P I ; E LECTRONIC S_ INC -_13A0083_,_ T ^ ' Q ? 13 DE I OOMíSTS DODDOflH O LA P I ELECTRONICS INC ■Ar o IN T E R IM B U LLE TIN S u b je c t to R e visio n W ithout N otice -JUNE 22, 1970 POWER TRANSISTOR ENGINEERING BULLETIN *: v;*


    OCR Scan     		13A0Q83 PG1101 PG1102 PG1103 2N4864 PG1104 PG1105 PG1106 PG1108 PG1109 1117 FG 2N4864 PG1105 PG1109 PDF

    buz 385

    Abstract: buz385 4900 SIEMENS
    Text: SIEMENS BUZ 385 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 385 Vos 500V b 9A RdSion 0.8 n Package Ordering Code TO-218AA C67078-A3210-A2 Maximum Ratings Parameter Symbol Drain source voltage Vds V DGR Drain-gate voltage


    OCR Scan     		O-218AA C67078-A3210-A2 O-218 buz 385 buz385 4900 SIEMENS PDF

    BFR101A

    Abstract: marking 1117 BFR101B
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


    OCR Scan     		BFR101A BFR101B BFR101B OT-14C BFR101A marking 1117 PDF

    AB marking code diode

    Abstract: BFR101B BFR101A
    Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated


    OCR Scan     		BFR101A BFR101B BFRT01B AB marking code diode BFR101B PDF

    1117 FG

    Abstract: AJ 1117 PG1101 AZ 1117 A IC IL 1117 2N4864 PG1102 PG1103 PG1104 PG1105
    Text: *" ' M .«JfV'­* i-X í-vJ 0043592 A P I'E LECTRONICS ‘ A P I ELECTRONICS IN C INC 1 3 A 0 O 83 T r^ à-Q.7 13 DE 1 0 0 4 3 5 = 1 5 0 0 0 0 0 Ö 3 0 I .w>~v INTERIM BULLETIN S u b je c t to R e visio n W ith o u t N o tic e POW ER TRANSISTOR ENGINEERING BULLETIN


    OCR Scan     		PG1101 PG1117, 1117 FG AJ 1117 AZ 1117 A IC IL 1117 2N4864 PG1102 PG1103 PG1104 PG1105 PDF

    MAX8862

    Abstract: No abstract text available
    Text: 19-1117; Rev 0; 8/96 Low-Cost, Low-Dropout, Dual Linear Regulator _Applications Cellular Phones Cordless Phones PCS Phones PCMCIA Cards Modems Hand-Held Instruments Electronic Planners _Features ♦ Low Cost


    Original     		250mA 100mA 160mV 200mA MAX8862 1-0041A PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1117; Rev 0; 8/96 V M / X IA I Low -C ost, Low-Dropout, D ual L in ear R eg u lato r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from +2V to +11V with external resistors. The input


    OCR Scan     		MAX8862 250mA 100mA, 160mV. 200mV 100kHz. PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1117;Rev0;8/96 Low-Cost, Low-Dropout, Dual Linear Regulator The MAX8862 comes in a 1 6-pin SO package with a lead frame that uses multiple GND pins as a heat sink for additional thermal dissipation. Applications _ Features ♦ Low Cost


    OCR Scan     		MAX8862 250mA 100mA 160mV 200mA 200pA MAX88 PDF

    gs 1117 ax

    Abstract: 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117
    Text: I f\ A dvanced L in e a r D e v ic e s , In c . J ALD1107/ALD1117 QUAD/DUAL P-CHANNEL MATCHED MOSFET ARRAY APPLICATIONS GENERAL DESCRIPTION The ALD 1107/ALD 1117 are m onolithic quad/dual P-channel enhance­ m entm ode matched M O SFET transistor arrays intended fo r a broad range


    OCR Scan     		ALD1107/ALD1117 1107/ALD 107/A ALD1106 ALD1106 1107/A ALD1101 LD1102 LD1103) gs 1117 ax 1117 S Transistor Transistor b 1117 c 1117 ald 1106 LD1103 ic 1117 PDF

    capacitor 1nj 400

    Abstract: X8862L
    Text: 19-1117: Rev 0 :8 /9 6 L o w - C o s t , L o w - Dr o p o u t , Du a l L i n e a r R e g u l a t o r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from + 2V to +11V with external resistors. The input


    OCR Scan     		MAX8862 250mA 100mA, 160mV. capacitor 1nj 400 X8862L PDF

    1117F

    Abstract: No abstract text available
    Text: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan     		RN1112F RN1113F 1117F RN2112F, RN2113F 1117F PDF

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1 PDF

    schematic diagram tv sony 21 trinitron

    Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
    Text: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV


    Original     		KV-EF34M80 RM-951 SCC-U28D-A NA324-M3 A80LPD10X) SBX3005-01 RM-951) schematic diagram tv sony 21 trinitron cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112 PDF

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


    Original     		O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS PDF

    transistor 1201 1203 1205

    Abstract: 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282
    Text: ALPHANUMERICAL INDEX Type Function Number Page Number AVS08 V fH Automatic Mains Selector 110/220V AC for SMPS < 200W 937 AVS10 Automatic Mains Selector (110/220V AC) for SMPS < 3CI0W 943 / Automatic Mains Selector (110/220V AC) for SMPS < 500W 949 v / Automatic Voltage Switch (SMPS < 300W ).


    OCR Scan     		AVS08 AVS10 110/220V TEA6420J TEA6422 TEA6425 TEA6430 TEA7605 transistor 1201 1203 1205 500W TRANSISTOR AUDIO AMPLIFIER tda2050 bridge amplifier circuits buh41 remote control encoder decoder tda7294 220v 300w ac regulator circuit BUH313 TDA7294 12v TDA282 PDF