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    TRANSISTOR B 116 Search Results

    TRANSISTOR B 116 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD443

    Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power


    Original     		PDF BLW77 BD443 MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor marking WV2

    Abstract: No abstract text available
    Text: wmmt B FQ67/B FQ67 R/B FQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated


    OCR Scan     		PDF FQ67/B FQ67W BFQ67 BFQ67R BFQ67W 20-Jan-99 transistor marking WV2

    TRIMMER cap no-2222 809 07015

    Abstract: BD433 BLW77
    Text: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­


    OCR Scan     		PDF BLW77 TRIMMER cap no-2222 809 07015 BD433 BLW77

    Philips FA 291

    Abstract: ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor
    Text: b b i a i B l 0Q3BDÛ7 E l l M A p x ^roductspecjflcati^ Philips Semiconductors ^ NPN 2 GHz wideband transistor BFT24 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in


    OCR Scan     		PDF BFT24 Philips FA 291 ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor

    transistor fp 1016

    Abstract: BFQ34T ON4497 FP 801 UBB361
    Text: Philips Semiconductors bbSBSBl G D S lS b T 113 • APX Product specification NPN 4 GHz wideband transistor BFQ34T N AMER PHILIPS/DISCRETE b'ìE ]> PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The


    OCR Scan     		PDF ON4497) BFQ34T transistor fp 1016 BFQ34T ON4497 FP 801 UBB361

    transistor BR 471 A

    Abstract: be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675
    Text: Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class pow er stages in TV receivers Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF N125A 626/1177A2 transistor BR 471 A be27 BF 471 Transistor A 471 CM 90-PS Scans-0010675

    BFQ65

    Abstract: No abstract text available
    Text: Philips Semiconductors b b 53^31 QQ31S R T bSQ MAPX Product specification NPN 8 GHz wideband transistor ^ ^ N DESCRIPTION a HER BFQ65 PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a plastic SOT37 envelope. It is designed for wideband application in the GHz


    OCR Scan     		PDF QQ31S BFQ65 BFQ65

    BFG65

    Abstract: transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332
    Text: Philips Semiconductors b b S B 'ÌB l G0 3 i n 3 SCH • AP X Product specification NPN 8 GHz wideband transistor — — — — BFG65 N APIER P H IL IP S /D IS C R E T E b'JE ]> DESCRIPTION NPN transistor in a four-lead dual emitter plastic envelope SOT103 .


    OCR Scan     		PDF BFG65 OT103) MSB037 OT103. BFG65 transistor 3702 558 npn MSB037 4221 transistor D 1414 transistor MBB332

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		PDF 711Dflgb BFS17A MSB003 E2p 96 transistor BFS17

    Untitled

    Abstract: No abstract text available
    Text: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in


    OCR Scan     		PDF BFT25

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 12 KL Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 200 A RthCK lc Thermal properties DC, pro B austein/p e r module DC, pro Baustein /p e r module pro B austein/p e r module


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    TS142

    Abstract: BFT25
    Text: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in


    OCR Scan     		PDF 7110aab BFT25 TS142 BFT25

    Untitled

    Abstract: No abstract text available
    Text: KSB1116/1116A PN P EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING T O -8 2 • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Collector-Base Voltage Symbol K S B 1 116 K S B 1 116A KS B 1116


    OCR Scan     		PDF KSB1116/1116A KSD1616/1616A KSB1116A CycleS50% 7Tb4142

    7901S

    Abstract: No abstract text available
    Text: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.


    OCR Scan     		PDF EN5099 FC154 FC154 2SC4270 2SA1669, 7901S

    f22e

    Abstract: Scans-0010547 din 867 BFT12 Q62702
    Text: B FT12 l\IPI\l-Silizium-HF-Planar-Transistor B F T 1 2 is t ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B3 DIN 41 867 äh n l.T O -50 für allgemeine Verwendung in Verstärkern bis in den GHz-Bereich, z .B . für Breitbandantennenverstärker hoher Ausgangsleistung und Linearität sowie für Os­


    OCR Scan     		PDF BFT12 Q62702â 140mA f22e Scans-0010547 din 867 BFT12 Q62702

    P3H7

    Abstract: Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma
    Text: asc » • fl23Sb05 OOOHbS? T ■SIEfi/ T-if-tJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high


    OCR Scan     		PDF fl235b05 desi548 U4661 BFR14B /cS10mA 200MHz P3H7 Transistor BFR 98 Transistor BFR 96 Transistor BFr 99 BFR14 BFR14B F-05 Q62702-F494 microwave transistor siemens cs10ma

    c 879 transistor

    Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR
    Text: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF


    OCR Scan     		PDF BFT24 7110fl2b 004517b c 879 transistor BFT24 t 326 Transistor 702 P TRANSISTOR

    BFR134

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37


    OCR Scan     		PDF bbS3T31 BFR134 BFR134

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors ^ 53^ 31 0031bDb b lO M APX Product specification NPN 8 GHz wideband transistor ^ BFQ66 N DESCRIPTION AUER PHILIPS/DISCRETE b'lE » PINNING Small-signal planar epitaxial NPN transistor in hermetically-sealed sub-miniature SOT173 and


    OCR Scan     		PDF 0031bDb BFQ66 OT173 OT173X

    Untitled

    Abstract: No abstract text available
    Text: b h S B 'lB l Philips Semiconductors 002^230 b 3b M l APX Product specification UHF power transistor BLV193 'N AMER PHILIPS/DISCRETE FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.


    OCR Scan     		PDF BLV193 MRAS57

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX95 7Z66943

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS B 'JB l DDB lH fiS IfiS MAPX Product specification NPN 5 GHz wideband transistor BFP96 N AMER PHILIPS/DISCRETE DESCRIPTION bRE T> PINNING NPN transistor in hermetically sealed sub-miniature SOU 73 and SOT173X micro-stripline envelopes.


    OCR Scan     		PDF BFP96 OT173X BFQ32C.

    BC369

    Abstract: No abstract text available
    Text: Jv BC369 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO-92 package, intended fo r low voltage, high current LF applications. BC368/BC369 is the matched complementary pair suitable fo r class-B output stages up to 3 W.


    OCR Scan     		PDF BC369 BC368/BC369 BC369-10 BC369-25 BC369