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    TRANSISTOR B 1560 Search Results

    TRANSISTOR B 1560 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B 1560 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    transistor d 1557

    Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
    Text: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF D25fel2 BSS83 OT143 Z87623 7Z92669 transistor d 1557 BSS83 BR B6S M74 marking philips bss83 BSS83 M74

    KD621K20

    Abstract: No abstract text available
    Text: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621K20 Amperes/1000 KD621K20

    transistor d 1557

    Abstract: No abstract text available
    Text: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.


    OCR Scan     		PDF BSS83 OT143 transistor d 1557

    Untitled

    Abstract: No abstract text available
    Text: KS621220A7 Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S Í O Q I b D d r lin Q t O P Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621220A7 Amperes/1200

    Untitled

    Abstract: No abstract text available
    Text: QCA300BA60 TRANSISTOR MODULE Q C A 3 0 0 B A 6 0 is a dual Darlington power transi which has series-connected ULTRA HIGH I if e , high power Darlington transistors. Each transistor has a ri leled fast recovery diode trr. 2 0 0 n s . The mounting module is electrically isolated from Semiconductor


    OCR Scan     		PDF QCA300BA60 Tj-25Â 600mA Q002015

    cb pj 47 diode

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


    OCR Scan     		PDF bbS3T31 DD3227fl LFE15600X cb pj 47 diode

    TTL integrated circuit Dual J-K Master Slave Flip flop

    Abstract: Fairchild 9002 DTL Fairchild 930 JK flipflop 9001 micrologic* master slave ami 9002 ttul Logic 9001 fairchild micrologic dtl rs flip flop ScansUX979
    Text: MARCH 1967 • FAIRCHILD TR A N SIST O R -T R A N SIST O R G E N E R A L D E S C R IP T IO N MICROLOGIC The Fairchild Transistor-Transistor M icrologic* Integrated Circuit fam ily TT/iL com b ines a high fanout, high noise immunity, low power dissipation and good capacitive load driving


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    KD221203A7

    Abstract: KD524575 KD225575 KD524505 KD221K75 KD221205A7 KD221404 KD421415 KD7212A1 kd224575
    Text: D 0 111E R E X I N C t>4E rnmenex J> m 72T4L21 0 0 0 b 5 4 ci D b 4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)


    OCR Scan     		PDF 72T4L21 BP107, KD7245A1 KD721KA1 KD7212A1 KD724502 KD221203A7 KD524575 KD225575 KD524505 KD221K75 KD221205A7 KD221404 KD421415 kd224575

    ks624550

    Abstract: kd221k75hb KD224503HB KD224505HB KS524505HB QM150DY-2H QM150DY-HB KS524505HBA KD224575HB QM150DY-24
    Text: POÜJEREX I NC b 4E J> m 000LSS3 515 BIPRX mn/Btex_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES


    OCR Scan     		PDF 000LSS3 BP107, KS524503HBAA KSF22005 KS524505HBÃ ks624550 kd221k75hb KD224503HB KD224505HB KS524505HB QM150DY-2H QM150DY-HB KS524505HBA KD224575HB QM150DY-24

    KD224503HB

    Abstract: KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220
    Text: POÙJEREX I NC b4E D • 000LSS3 S^S « P R X m t/BÍEX Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 HIGH-BETA DARLINGTON TRANSISTOR MODULES


    OCR Scan     		PDF 000LSS3 BP107, KS524503H KSF22005 KD224503HB KS624550 powerex kd kd2245 kd2212 kd221K kd62 kd424520hbaa ks52 ksf220

    KD221203A7

    Abstract: KD524505 KD221404 KD225575 KD321408 kd424520 KD721KA1 kd2212 KD7245A1 kd221
    Text: D 0 111E R E X t>4E J> INC rnmenex m 72T4L21 0 0 0 b 5 4 ci D b4 * P R X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 DARLINGTON TRANSISTOR MODULES (Continued)


    OCR Scan     		PDF 72T4L21 BP107, KD7245A1 KD721KA1 KD7212A1 KD221203A7 KD524505 KD221404 KD225575 KD321408 kd424520 kd2212 kd221

    philips Transistor Equivalent list

    Abstract: BDT91 BY239 LFE15600X D0322 374 erie transistor td7
    Text: N AUER PHILIPS/DISCRETE b^E T> • bbSBTBl GG3227Ô Ü70 H A P X Philips Semiconductors Product specification NPN silicon planar epitaxial microwave . . power transistor L rE I FEA TU R E S Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors


    OCR Scan     		PDF GG3227Ã LFE15600X philips Transistor Equivalent list BDT91 BY239 LFE15600X D0322 374 erie transistor td7

    200V transistor npn 20a

    Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
    Text: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold


    OCR Scan     		PDF 99mml 600pF 600pF SDT14305, 2N3846, SDT14414, 200V transistor npn 20a Transistor 200V 20A 2N3846 200V transistor npn 10a

    BUK795-60A

    Abstract: No abstract text available
    Text: PH I L I P S INTERNATIONAL SbE D • 7 1 1 Q S 5 b Ü Ü 4 4 7 S 3 7T2 ■ P H I N Philips Components Data sheet status Prelim inary specification date of issue March 1991 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a 5 pin plastic envelope.


    OCR Scan     		PDF BUK795-60A OT263

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 sus VOLTS Ic (max) AMPS ^CEO PACKAGE DEVICE TYPE l*FE@ IC/ VCE (min/max @ A/V) VcE(sat) @ Ic^B (V @ A/A) p * WATTS fT (MHz) NPN 2N1487 40 6 15-45@ 1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4 3@1.5/.3


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055 2N3713 2N3714 2N3715 2N3716 2N4070

    DTS423

    Abstract: DTS-425 DTS410 DTS413 2N6575 DTS-411 DTS425 DTS-413 transistor 2N6274 DTS-430
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS423 DTS-425 DTS410 DTS413 2N6575 DTS-411 DTS425 DTS-413 transistor 2N6274 DTS-430

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le max ss TO-61 5 to 20A Vceo(sus) = 40-300V NPN Power Transistors VBE(SAT) 0IC/1B (V & A/V) ICEV0VCE (mA V) PO® TC = 25*C (W.M) Wt>®VCE I I I wc (A ®V) Ir (MHz) ton & W B (ju ® A/A) tOFF @IC/1B (p»®AfA) 1 @ 21.2


    OCR Scan     		PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2B14 2N3487 2N3488

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan     		PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    transistor s71

    Abstract: 2N1489 2N5671 2N1487 2N1488 2N1490 2N3055A 2N3713 2N3714 2N3771
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS 1*FE@ I f / V c E V c E (ja t) (min/max @ A/V) @ Ic^B (V @ A/A) p * r D WATTS fT (MHz) NPN 2N1487 40 6 15-45@1.5/4 3@1.5/.3 75 1.0 TO-3 2N1488 55 6 15-45@ 1.5/4


    OCR Scan     		PDF 2N1487 2N1488 2N1489 2N1490 2N3055A 2N3713 2N3714 2N3715A 2N3716A 2N3771 transistor s71 2N5671

    Westinghouse diode

    Abstract: Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324
    Text: 7294621 POWEREX INC T É? DE | 72T4L.21 0DQEHG7 5 | f Q A T-33-35 Single Darlington _ AmDeres TRANSISTOR í c n /i nnn 51i+o M odules Dim A B C D E F G H J K L N P Inches 3.740 Max 3.150 + .010 .90 M 5xM et 2.44 Max .59 .925 1.181 Max .83 .28 .236 .216 Dia 4


    OCR Scan     		PDF 72T4L T-33-35 S32452010 KS32452010 KS621K2010 Westinghouse diode Ks324520 WESTINGHOUSE ELECTRIC motor ac KS621K20 Westinghouse module KS324

    2N1479

    Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
    Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863


    OCR Scan     		PDF O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786

    F18N10CS

    Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
    Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl


    OCR Scan     		PDF 43GE271 RFB18N10CS/ 1810CS01 RFB18N10CS, RFB18N10CSVM, RFB18N10CSHM AN7254 AN7260. FB78N70CS, T-39-90 F18N10CS n713 18N10CS f18n10 RFB18N10CSVM Harris top marking

    transistor 2N 3792

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PN P TO-3 VcEO sus VOLTS Ic (m ax) A M PS 2N 3789 60 10 2 5 -9 0 @ l/2 2N 3790 80 10 2N 3791 60 2N 3792 hFE@ V CE VcE(sat) @ I cA b (V @ A /A ) Pr D * W ATTS fj (M H z) l@ 4/.4 150 4 2 5 -9 0 @ l/2


    OCR Scan     		PDF