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    TRANSISTOR B1 Y 016 Search Results

    TRANSISTOR B1 Y 016 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B1 Y 016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    QCI-39000

    Abstract: No abstract text available
    Text: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52


    Original     		PDF DS00049Q-page 24LC65-I/SN PIC16C54-RCI/SO DS30258C-page QCI-39000

    QCI-39000

    Abstract: C04090 C04-067
    Text: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52


    Original     		PDF DS00049N-page 11-ii 24LC65-I/SN PIC16C54-RCI/STemperature DS30258C-page QCI-39000 C04090 C04-067

    MO-193 footprint

    Abstract: CA 4570 QCI-39000
    Text: PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Microcontroller Products


    Original     		PDF 24LC65-I/SN PIC16C54-RCI/SO 28CXX 93LCXX MO-193 footprint CA 4570 QCI-39000

    0118B

    Abstract: L5901 APL5901 APL5902 marking 51 "SC-62" regulator
    Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA


    Original     		PDF APL5901/2 900mA APL5901/2 OT-89, OT-89-5, OT-223, O-252 O-252-5 100Hz 0118B L5901 APL5901 APL5902 marking 51 "SC-62" regulator

    Untitled

    Abstract: No abstract text available
    Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA


    Original     		PDF APL5901/2 900mA APL5901/2 OT-89, OT-89-5, OT-223, O-252 O-252-5 100Hz

    FERRITE BEAD 1000 OHM 0805

    Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
    Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier


    Original     		PDF MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100

    Helipot POTENTIOMETER

    Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
    Text: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION


    OCR Scan     		PDF MIL-S-19500/388B MIL-S-19500/388A 2N4947, 2N4948, 2N4949 MIL-S-19500. Helipot POTENTIOMETER 2N4947 transistor WL 431 Helipot 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan

    Untitled

    Abstract: No abstract text available
    Text: RFH RF2155 MICRO DEVICES 3 V PROGRAMMABLE GAIN POWER AM PLIFIER T y p ic a l A p p lic a tio n s • Analog Communication Systems • Driver Stage for Higher Power Applications • 900M Hz Spread Spectrum Systems • 3 V Applications 2 A M P L IF IE R S • 4 0 0 MHz Industrial Radios


    OCR Scan     		PDF RF2155 RF2155 915MHz.

    MAX730ACPA

    Abstract: No abstract text available
    Text: 19-0165; Rev 1; 8/94 5V, Step-Down, Current-Mode PWM DC-DC Converters _F e a tu re s ♦ 750mA Load Currents MAX738A/MAX744A Pulse-width modulation (PWM) current-m ode control provides precise output regulation and excellent tran­


    OCR Scan     		PDF 750mA MAX738A/MAX744A) MAX730A/MAX738A/MAX744A 16-PIN 5fl7bb51 MAX730ACPA

    BU208

    Abstract: POT CORE 4229P-L00 transistor bu208 4229PL00-3C8
    Text: M OTOROLA SC X ST R S/R F MOTOROLA BU207 BU208 SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTORS 1300 AND 1500 VOLTS HORIZONTAL DEFLECTION TRANSISTOR . . . specifically designed for use in large screen color deflection


    OCR Scan     		PDF BU207 BU208 BU208 14-MAXIMUM POT CORE 4229P-L00 transistor bu208 4229PL00-3C8

    BATWING sop-16

    Abstract: block diagram for automatic room power control RF2131 schematic diagram 48v battery charger schematic diagram 48v dc charger schematic diagram 48V automatic battery charger
    Text: RFI RF2131 MICRO DEVICES H IG H E F F IC IE N C Y A M PS/ETAC S A M P L IF IE R T y p ic a l A p p lic a t io n s • AMPS/ETACS Cellular Handsets Commercial and Consumer Systems • C D PD Portable Data Cards Portable Battery Powered Equipment • 9 00 M H z ISM Band Equipment


    OCR Scan     		PDF RF2131 900MHz RF2131 800MHz 950MHz 100pF G0GG454 BATWING sop-16 block diagram for automatic room power control schematic diagram 48v battery charger schematic diagram 48v dc charger schematic diagram 48V automatic battery charger

    Untitled

    Abstract: No abstract text available
    Text: R F RF2129 B MICRO-DEVICES 3V, 2 .5 G H Z LINEAR POWER A M PLIFIER T y p ic a l A p p lic a tio n s • 2.5GHz ISM Band Applications Commercial and Consumer Systems • PCS Communication Systems Portable Battery Powered Equipment • Wireless LAN Systems Broadband Spread Spectrum Systems


    OCR Scan     		PDF RF2129 RF2129

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits

    JR 220 RF TRANSMITTER

    Abstract: R 433M 7075M 22L2
    Text: RF2512 MICRODEVICES VHF/UHF TRANSMITTER Ty p ic al A p p licatio n s • Single or Dual Channel LO Source • FM/FSK Transmitter 433M H z, 868M H z or 9 1 5 MHz ISM Band Systems • Wireless Data Transmitters Wireless Security Systems P roduct D escription


    OCR Scan     		PDF RF2512 RF2512 915MHz 433MHz 868MHz 868MHz) 915MHz) JR 220 RF TRANSMITTER R 433M 7075M 22L2

    rc2016

    Abstract: EN3283
    Text: Ordering number : EN3283 No.3283 FC 129 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance Features • On-chip bias resistance (R1 = 10k£2) • Composite type with 2 transistors contained in the CP package currently in use, improving the


    OCR Scan     		PDF EN3283 FC129 2SA1496, rc2016 EN3283

    MAX730ACPA

    Abstract: No abstract text available
    Text: 19-0165; Rev2; 1/96 >kl>JX I>kl 5V, Step-Down, Current-Mode PWM DC-DC Converters _ Features The M A X 730A /M A X 738A /M A X 744A are 5 V -o u tp u t CMOS, step-down switching regulators. The MAX738A/ MAX744A accept inputs from 6V to 16V and deliver


    OCR Scan     		PDF MAX738A/ MAX744A 750mA. 500mA MAX730A 450mA 750mA MAX738A/MAX744A) 16-PIN MAX730ACPA

    RU3Y

    Abstract: No abstract text available
    Text: 5 7 , SCS-THOMSON TDE0160 :u PROXIMITY DETECTOR • SUPPLY VOLTAGE : +4 TO +36V ■ S U P P L Y C U R R E N T :< 1.2mA ■ OUTPUT TRANSISTORS : I = 20m A; Vce sat ^ 1100mV ■ OSCILLATOR FREQUENCY : < 1 MHz ■ LOSS RESISTANCE : 5 TO 5 0 k a DESCRIPTION


    OCR Scan     		PDF TDE0160 1100mV TDE0160 TDE0160DP DIP14) 0160FP RU3Y

    TRANSISTOR BO 344

    Abstract: V/Iadje
    Text: >: >:-Xv ¿C->:ÿ>:o >: • -;


    OCR Scan     		PDF RF2512 TRANSISTOR BO 344 V/Iadje

    stackpole ferrite 24B

    Abstract: 1601 resistor dale MBR140P stackpole 24b curves P-6042 pot core inductor ferrite pot core stackpole 24b saturation NY TRANSISTOR MAKING LIST 1N914
    Text: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4391 In v e r tin g and S te p - D o w n S w i t c h i n g R e g u la to r Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage


    OCR Scan     		PDF RC4391 RC4391 DS30004391 stackpole ferrite 24B 1601 resistor dale MBR140P stackpole 24b curves P-6042 pot core inductor ferrite pot core stackpole 24b saturation NY TRANSISTOR MAKING LIST 1N914

    Untitled

    Abstract: No abstract text available
    Text: RPT-86/RPT-87 PMI LOW POWER PCM REPEATERS P r e c is io n M o n o l i t h i c * In c . FEATURES • Low Power Consumption 56mW) • Single-Supply Operation • Wide Data Rate Range <100kblt/s to >3Mbit/s • Dual ALBO Diodes; Dynamic Range >50dB • Clock-Shutdown Circuit (RPT-87)


    OCR Scan     		PDF RPT-86/RPT-87 100kblt/s RPT-87) 544Mbit/s) 048Mbit/s) 152Mbit/ RPT-86/RPT-87 RPT-86 RPT-87 RPT-86/87

    MJ8503

    Abstract: MJ8502 MJ8504 J8503
    Text: MOTOROLA SC 1EE 0 § b3fc.72S4 O O f l i m ? ^ | XSTRS/R F MOTOROLA MJ8502 MJ8503 SEMICONDUCTOR TECHNICAL DATA D e s i g n e r s Data. S h e e t S .0 A M P ER E N P N SILIC O N PO W ER T R A N S IS T O R S SW ITCH M O D E S ER IES NPN S ILICO N POW ER T R A N SIS T O R S


    OCR Scan     		PDF MJ8502 MJ8503 Time-25Â YI45M. T0-204AA MJ8504 J8503

    Untitled

    Abstract: No abstract text available
    Text: KFM MICRO-DEVICES Preliminary RF 2 1 2 9 | 3V, 2 .5 G H Z LINEAR POWER AM PLIFIER T y p ic a l A p p lic a tio n s • 2.5GHz ISM Band Applications • Commercial and Consumer Systems • PCS Communication Systems • Portable Battery Powered Equipment • Wireless LAN Systems


    OCR Scan     		PDF RF2129 RF2129 45GHz

    2N33904

    Abstract: stackpole 24b curves 2n3904 npn fairchild beta stackpole ferrite 24B rc4191 ferrite pot core mini inverter circuit schematic diagram NY TRANSISTOR MAKING LIST Siemens Ferrite n27 1N914
    Text: F A IR C H IL D s e m ic o n d u c t o r Tm w w w .fa ir c h ild s e m i.c o m RC4391 In v e r tin g and S te p - D o w n S w i t c h i n g R e g u la to r Features • Versatile — Inverting function + to - Step-down function Adjustable output voltage


    OCR Scan     		PDF RC4391 RC4391 DS30004391 2N33904 stackpole 24b curves 2n3904 npn fairchild beta stackpole ferrite 24B rc4191 ferrite pot core mini inverter circuit schematic diagram NY TRANSISTOR MAKING LIST Siemens Ferrite n27 1N914

    RC4193

    Abstract: RC4191 RC4192 RC4391 03VQ1 transistor mw 131
    Text: FAIRCHILD www.fairchildsemi.com M lC O N D U C T O R RC41 91 /RC41 92/RC41 93 M icropow er Sw itching Regulator Features • High efficiency - 85% typical • Low quiescent current - 215 ¿¿A • Adjustable output - 1.3V to 30V • High switch current - 200 mA


    OCR Scan     		PDF /RC41 92/RC41 RC4191/4192/4193 DS30004191 RC4193 RC4191 RC4192 RC4391 03VQ1 transistor mw 131