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    TRANSISTOR B11 Search Results

    TRANSISTOR B11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    2N2369

    Abstract: transistor 2n2369 J 2N2369 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor 2N2369


    Original     		PDF M3D125 2N2369 MAM264 SCA54 117047/00/02/pp8 2N2369 transistor 2n2369 J 2N2369 BP317

    MAM264

    Abstract: M3D125 2N2369A 2n2369a philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369A NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1998 Mar 03 Philips Semiconductors Product specification NPN switching transistor 2N2369A


    Original     		PDF M3D125 2N2369A MAM264 MAM264 M3D125 2N2369A 2n2369a philips

    2N2369A

    Abstract: BP317 MAM264
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369A NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 06 Philips Semiconductors Product specification NPN switching transistor 2N2369A


    Original     		PDF M3D125 2N2369A MAM264 SCA54 117047/00/02/pp8 2N2369A BP317 MAM264

    Y22 SOT23

    Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor


    Original     		PDF PMBTH10 PMBTH10 PMBTH81. MSB003 Y22 SOT23 MSB003 g21 Transistor B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11

    BP317

    Abstract: BSX20 TRANSISTOR bsx20
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor BSX20


    Original     		PDF M3D125 BSX20 MAM264 SCA54 117047/00/02/pp8 BP317 BSX20 TRANSISTOR bsx20

    PMBTH10

    Abstract: MSB003 PMBTH81 MRA566
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH81 PNP 1 GHz switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification PNP 1 GHz switching transistor FEATURES PINNING • Low cost


    Original     		PDF PMBTH81 PMBTH81 PMBTH10. MSB003 PMBTH10 MSB003 MRA566

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369A NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1998 Mar 03 Philips Semiconductors Product specification NPN switching transistor 2N2369A


    Original     		PDF M3D125 2N2369A MAM264 SCA54 117047/00/02/pp8

    2N2484

    Abstract: SOT-18 BP317 Transistor 2N2484
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2484 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 01 Philips Semiconductors Product specification NPN general purpose transistor


    Original     		PDF M3D125 2N2484 MAM264 SCA54 117047/00/02/pp8 2N2484 SOT-18 BP317 Transistor 2N2484

    Transistor BC177

    Abstract: SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor


    Original     		PDF M3D125 BC177 BC107. MAM263 SCA54 117047/00/03/pp8 Transistor BC177 SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor

    MBB400

    Abstract: MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


    Original     		PDF BF747 MSB003 MBB400 MSB003 BF747 transistor y21 y21 transistor marking code 604 SOT23

    mbb400

    Abstract: BF747 MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF747 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF747 FEATURES DESCRIPTION • Stable oscillator operation


    Original     		PDF BF747 MSB003 mbb400 BF747 MSB003

    BF547

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF


    Original     		PDF BF547 MSB003 BF547 MSB003

    B12 IC marking code

    Abstract: BF547 MSB003 Y22 SOT23 transistor y21
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF547 NPN 1 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz wideband transistor BF547 FEATURES DESCRIPTION • Feedback capacitance typ. 1 pF


    Original     		PDF BF547 MSB003 B12 IC marking code BF547 MSB003 Y22 SOT23 transistor y21

    bf547 philips

    Abstract: BF547 B12 IC marking code marking code 604 SOT23
    Text: BF547 NPN 1 GHz wideband transistor Rev. 03 — 27 July 2004 Product data sheet 1. Product profile 1.1 General description Low cost NPN transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ Feedback capacitance typically 1 pF Stable oscillator operation


    Original     		PDF BF547 bf547 philips BF547 B12 IC marking code marking code 604 SOT23

    IGBT PIN CONFIGURATION

    Abstract: GN2470 400CA IC SR03x 700V mos GN2470K4-G SR036 SR037 B1130 SR03x
    Text: GN2470 IGBT Insulated Gate Bipolar Transistor Features General Description The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor IGBT that combines the positive aspects of both BJTs and MOSFETs. ► Low voltage drop at high currents ► Optimized for use with the Supertex SR036 and


    Original     		PDF GN2470 SR036 SR037 O-252 SR036 1N4001 IGBT PIN CONFIGURATION 400CA IC SR03x 700V mos GN2470K4-G B1130 SR03x

    BF180

    Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
    Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­


    OCR Scan     		PDF BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504

    Untitled

    Abstract: No abstract text available
    Text: 7qqigii3 0005171 qpq TRANSISTOR MODULE QCA50B/QCB50A40/60 UL;E76102 M QCA50B and QCB50A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA50B/QCB50A40/60 E76102 QCA50B QCB50A 400/600V QCA50B/QCB50A

    6002 transistor

    Abstract: QCA50B QCA50B40 QCA50B60 QCB50A40 QCB50A60 UUE76102
    Text: 0002171 IDT TRANSISTOR M ODULE QCA50B/QCB50A40/60 UUE76102 M Q C A 5 0 B and Q C B 5 0 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA50B/QCB50A40/60 QCA50B QCB50A 400/600V UUE76102 0CA50B QCA50B40 0D02172 50A40 b0B60 6002 transistor QCA50B60 QCB50A40 QCB50A60

    Untitled

    Abstract: No abstract text available
    Text: Transistors General Purpose Transistor Isolated Dual Transistors IMT17 •Features 1) Two 2SA1036K chips in a SMT package. 2) Mounting possible with SMT3 au­ tomatic mounting machine. 3) Transistor elements are indepen­ dent, eliminating interference.


    OCR Scan     		PDF 2SA1036K -500mA SC-74 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    TRANSISTOR D 1902

    Abstract: a114* transistor 1902 transistor UMB rohm 08P1
    Text: Transistors Digital Transistor Dual Digital Transistors Isolated U M B 1 1 N / IM B 1 1 A •Features 1) Two DTA114E in UMTancf SMT packages. 2) Mounting possible with UMT3 or SMT3 automatic mounting ma­ chines. 3) Transistor elements are indepen­ dent, eliminating interference.


    OCR Scan     		PDF DTA114E UMB11N 1MB11A --50V, 100MHz* IMB11A TRANSISTOR D 1902 a114* transistor 1902 transistor UMB rohm 08P1

    C4106 transistor

    Abstract: c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191
    Text: SAfiYO T0-220MF Mini Fin Power Transistor Series Featur-es Sanyo power transistor case outline T0-220MF (Mini Fin) is a small-sized package suited for mounting on electronic equipment that is limited in height. When mounted on the board, the height above the board is approximately 10mm lower


    OCR Scan     		PDF T0-220MF T0-220 2SB1266 2SD1902 2SB1267 2SD1903 2SB1268 2SD1904 2SB1269 C4106 transistor c4106 B824 transistor transistor c3457 C4105 transistor transistor c4106 B1133 transistor d1061 transistor c3447 transistor d1191

    transistor marking TN SC-95

    Abstract: No abstract text available
    Text: UMB11N IMB11A Transistor, digital, dual, PNP, Features Dimensions Units : mm with 2 resistors • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMB11N and IMB11A; B11 • package contains two independent PNP digital transistors (DTA114EKA),


    OCR Scan     		PDF UMB11N IMB11A SC-74) IMB11A; DTA114EKA) SC-70) SC-59) UMB11N transistor marking TN SC-95

    103 transistor

    Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
    Text: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)


    OCR Scan     		PDF 2SB1183F5 SC-63) B1183 2SD1759 2SB1183F5 001470a 001471G 2SB1183F5, 103 transistor marking code SSs transistor PNP 2sb transistor LB 122 transistor