NPN Transistor 600V
Abstract: B528 ULB122
Text: UNISONIC TECHNOLOGIES CO., LTD ULB122 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC ULB122 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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ULB122
ULB122
ULB122G-xx-TM3-T
O-251
QW-R213-014
NPN Transistor 600V
B528
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HLB122L
Abstract: HLB122
Text: UTC HLB122 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB122 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage
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HLB122
HLB122
O-251
HLB122L
QW-R213-014
HLB122L
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NPN Transistor 600V
Abstract: L13022
Text: UNISONIC TECHNOLOGIES CO., LTD L13022 NPN SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 The UTC L13022 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage
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L13022
L13022
O-251
L13022L
L13022G
L13022-TM3-T
L13022L-TM3-T
L13022G-TM3-T
QW-R213-014
NPN Transistor 600V
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NPN Transistor 600V
Abstract: l13024 NPN Transistor 600V TO-220
Text: UNISONIC TECHNOLOGIES CO., LTD L13024 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC L13024 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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L13024
L13024
L13024L
L13024G
L13024-TA3-T
L13024-TM3-T
L13024L-TA3-T
L13024L-TM3-T
L13024G-TA3-T
L13024G-TM3-T
NPN Transistor 600V
NPN Transistor 600V TO-220
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transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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smd TRANSISTOR code b6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 smd diode code B6 TRANSISTOR SMD MARKING CODE smd code marking BM MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE A1 smd TRANSISTOR code marking AV smd TRANSISTOR marking b6 B6 DIODE schottky
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product specification 2003 Nov 10 Philips Semiconductors Product specification NPN transistor/Schottky-diode module PMEM4020ND PINNING FEATURES • 600 mW total power dissipation
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M3D302
PMEM4020ND
SCA75
R76/01/pp11
smd TRANSISTOR code b6
MOSFET TRANSISTOR SMD MARKING CODE A1
smd diode code B6
TRANSISTOR SMD MARKING CODE
smd code marking BM
MARKING SMD npn TRANSISTOR R
TRANSISTOR SMD MARKING CODE A1
smd TRANSISTOR code marking AV
smd TRANSISTOR marking b6
B6 DIODE schottky
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smd TRANSISTOR code b6
Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 MARKING SMD npn TRANSISTOR a1 smd TRANSISTOR marking b6 marking code b6 MOSFET TRANSISTOR SMD MARKING CODE js transistor smd yw PMEM4020ND PMEM4020PD schottky-diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D302 PMEM4020ND NPN transistor/Schottky-diode module Product data sheet 2003 Nov 10 NXP Semiconductors Product data sheet NPN transistor/Schottky-diode module FEATURES PMEM4020ND PINNING • 600 mW total power dissipation
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M3D302
PMEM4020ND
R76/01/pp11
smd TRANSISTOR code b6
MOSFET TRANSISTOR SMD MARKING CODE A1
MARKING SMD npn TRANSISTOR a1
smd TRANSISTOR marking b6
marking code b6
MOSFET TRANSISTOR SMD MARKING CODE js
transistor smd yw
PMEM4020ND
PMEM4020PD
schottky-diode
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NPN Transistor 600V TO-220
Abstract: ULB124G ulb124
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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ULB124
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
O-251
QW-R213-013
NPN Transistor 600V TO-220
ULB124G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO- 251 The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES * High Speed Switching
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ULB124
ULB124
O-220
ULB124G-xx-TA3-T
ULB124G-xx-TM3-T
O-251
QW-R213-013
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LB122T
Abstract: HLB122T to-126 npn switching transistor 400v
Text: HI-SINCERITY Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2005.12.02 Page No. : 1/4 MICROELECTRONICS CORP. HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching
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HT200208
HLB122T
HLB122T
O-126
183oC
217oC
260oC
LB122T
to-126 npn switching transistor 400v
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HLB122I
Abstract: transistor k 2837
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2003.04.16 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
transistor k 2837
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HLB122T
Abstract: transistor k 2837
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200208 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/3 HLB122T NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122T is a medium power transistor designed for use in switching
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HT200208
HLB122T
HLB122T
O-126
transistor k 2837
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HLB122I
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9030 Issued Date : 1998.07.01 Revised Date : 2002.05.08 Page No. : 1/4 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching
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HE9030
HLB122I
HLB122I
O-251
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HLB122D
Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Text: HI-SINCERITY Spec. No. : HD200206 Issued Date : 2002.05.01 Revised Date : 2005.08.16 Page No. : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching
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HD200206
HLB122D
HLB122D
O-126ML
183oC
217oC
260oC
TP 1322
Transistor C G 774 6-1
transistor k 2837
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ULB124
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULB124 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR 1 TO-126 DESCRIPTION The UTC ULB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. FEATURES 1 * High Speed Switching
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ULB124
O-126
ULB124
O-220
ULB124L-xx-TA3-T
ULB124G-xx-TA3-T
ULB124L-xx-TM3-T
ULB124G-xx-TM3-T
ULB124L-xx-T60-T
ULB124G-xx-T60-T
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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philips tv smps
Abstract: BUK454-500B T0220AB
Text: N AMER PHIL IPS /DISCRETE fc»TE D • fcifc.Sa'm 0030b25 b6S H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0030b25
BUK454-500B
T0220AB
BUK454-500B
philips tv smps
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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SQD65BB75
Abstract: sqd65B
Text: TRANSISTOR M O D U L E non -ISOLATED TYPE SQP65BB75 S Q D 6 5B B is a high speed, high power Darlington transistor designed for Resonance circuit. The transistor has a reverse paralleled fast recovery diode. • VCbo= 750V, lc = 65A • Suitable for Resonance circuit applications.
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SQP65BB75
SQD65BB75
00DEE22
SQD65BB75
sqd65B
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BULD128D-1 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . ORDER CODES : BULD128DA-1 AND BULD128DB-1 . NPN TRANSISTOR . HIGH VOLTAGE CAPABILITY . LOW SPREAD OF DYNAMIC PARAMETERS
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BULD128D-1
BULD128DA-1
BULD128DB-1
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Untitled
Abstract: No abstract text available
Text: forward [ntejuatiokal electronicslid, BC818S SEMICONDUCTOR TECHNICAL DATA. NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS at Tamb=*25*C Characteristic Colectoi>Base Voka^ Colector-EmWer Vokage Emitter-Base Voltage Colector Curreit
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BC818S
Ta-25Â
100uA
100mA
500mA
300mA
50MHZ
300uSJ
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lte in philips
Abstract: BUK454-500B T0220AB
Text: N AMER P H I L I P S / D I S C R E T E fc»TE D • 0 0 3 0 b2 5 b6 S H A P X fcifc.Sa'm Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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0D3Db25
BUK454-500B
T0220AB
lte in philips
BUK454-500B
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is Intended for use in
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BUK564-60H
SQT404
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NTE74C925
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74LS626 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator NTE74LS627 14-Lead DIP, See Dlag. 247 Dual Voltage Controlled Oscillator NTE74LS629 16-Lead DIP, See Diag. 249 Dual Voltage Controlled Oscillator
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NTE74LS626
16-Lead
NTE74LS627
14-Lead
NTE74LS629
NTE74LS640,
20-Lead
NTE74LS642
NTE74C925
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