MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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RB521S-30
Abstract: UML12N
Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode
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UML12N
2SC4617and
RB521S-30
SC-88A
UML12N
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MARKING L12
Abstract: RB521S-30 UML12N
Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode
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UML12N
2SC4617and
RB521S-30
SC-88A
32MHZ
MARKING L12
UML12N
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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2SA2018
Abstract: RB521S-30 2SA20
Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. 1.3 2.0 0.65 0.65 0.9 (1) (5) 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode
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2SA2018
RB521S-30
SC-88A
2SA20
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4420 Transistor
Abstract: Schottky Diode 40V 5A Schottky diode Die IR ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC transistor MV sot23
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
Schottky Diode 40V 5A
Schottky diode Die IR
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
transistor MV sot23
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2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
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O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA143EE
416/SC
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network
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LDTA124EET1
SC-89
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6aa marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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DTA114YE
416/SC
6aa marking
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2SC4520
Abstract: FP302 SB05-05CP
Text: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.
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EN4726
FP302
FP302
2SC4520
SB05-05CP,
FP302]
SB05-05CP
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SANYO DC 303
Abstract: 2SD1623 FP303 SB05-05CP MARKING 303
Text: Ordering number:EN4657 FP303 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.
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EN4657
FP303
FP303
2SD1623
SB05-05CP,
FP303]
SANYO DC 303
SB05-05CP
MARKING 303
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FP302
Abstract: 2SC4520 SB05-05CP
Text: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.
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EN4726
FP302
FP302
2SC4520
SB05-05CP,
FP302]
SB05-05CP
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marking EB 202 diode
Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
Text: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,
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EN4655
FP104
FP104
2SA1729
SB05-05CP
FP104]
marking EB 202 diode
marking EB 202 transistor
EN4655
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transistor sc59 marking
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
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DTC114TE
DTC114TE
416/SC
transistor sc59 marking
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6aa marking
Abstract: 327 SOT-6
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114YE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a
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DTC114YE
DTC114YE
416/SC
6aa marking
327 SOT-6
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2SD1621
Abstract: FP301 SB07-03C
Text: Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2 devices NPN transistor and Schottoky barrier diode contained in one package,
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EN4539
FP301
FP301
2SD1621
SB07-03C
FP301]
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EN4539
Abstract: 2SD1621 FP301 SB07-03C 45393 marking 301
Text: Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2 devices NPN transistor and Schottoky barrier diode contained in one package,
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EN4539
FP301
FP301
2SD1621
SB07-03C
FP301]
EN4539
45393
marking 301
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MARKING 108
Abstract: FP-108-1 2SB1121 FP108 TA0316
Text: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN5100
FP108
FP108
2SB1121
SB01015CP,
FP108]
MARKING 108
FP-108-1
TA0316
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FP-108-1
Abstract: 2SB1121 FP108 1.5A COMMON CATHODE 2088a TA0316
Text: Ordering number:EN5100 FP108 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN5100
FP108
FP108
2SB1121
SB01015CP,
FP108]
FP-108-1
1.5A COMMON CATHODE
2088a
TA0316
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marking 105
Abstract: 2SB1123 FP105 2088a
Text: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN4656
FP105
FP105
2SB1123
SB0505CP,
FP105]
marking 105
2088a
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FP105
Abstract: marking 105 2SB1123 2088a
Text: Ordering number:EN4656 FP105 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating
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EN4656
FP105
FP105
2SB1123
SB0505CP,
FP105]
marking 105
2088a
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tm1101
Abstract: Diode schottky eb PZTM1101 PZTM1102
Text: Product specification Philips Semiconductors PZTM1101 NPN transistor/Schottky-diode module FEATURES DESCRIPTION • Low output capacitance Combination of an NPN transistor and a Schottky barrier diode in a plastic SOT223 package. PNP complement: PZTM1102.
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PZTM1101
OT223
PZTM1102.
TM1101.
OT223)
OT223.
7110flEb
tm1101
Diode schottky eb
PZTM1101
PZTM1102
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