TRANSISTOR BC237B Search Results

TRANSISTOR BC237B Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BC237B Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR bc237b Abstract: BC237B 9016 transistor malaysia IC TRANSISTOR C 460 358 IC F 9016 transistor BC237 Text: BC237B General Purpose Transistor NPN Description: • General purpose NPN silicon planar epitaxial transistors, best suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders. Hi-Fi amplifiers, signal processing circuits of television receivers.	Original	PDF	BC237B TRANSISTOR bc237b BC237B 9016 transistor malaysia IC TRANSISTOR C 460 358 IC F 9016 transistor BC237
TRANSISTOR BC237b Abstract: bc237b 9016 transistor BC237 Text: BC237B General Purpose Transistor NPN General Description: • General Purpose NPN Silicon Planar Epitaxial Transistors, Best suited for use in driver stages of audio amplifiers, low noise input stages of tape recorders. Hi-Fi amplifiers, signal processing circuits of television receivers.	Original	PDF	BC237B TRANSISTOR BC237b bc237b 9016 transistor BC237
BC237 Abstract: 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	BC237/238/239 BC237 BC238/239 -55-1V 100MHz 100mA BC237B/238B BC237 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337
transistor 238B Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1	Original	PDF	BC237/238/239 BC237 BC238/239 100mA 100mA 100MHz BC238 BC239 transistor 238B
238b Abstract: BC238 transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237 Text: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g	Original	PDF	BC237. BC237 BC238 BC239C 200Hz BC239 BC238 238b transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237
TRANSISTOR 237b Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237 Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter	Original	PDF	BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
TRANSISTOR 237b Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter	Original	PDF	BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
Transistor BC239c Abstract: BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A BC238 Text: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g	Original	PDF	BC237. BC237 BC238 BC239C 200Hz BC239 BC238 Transistor BC239c BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A
BC237 Abstract: BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239 Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	BC237/238/239 BC237 BC238/239 100MHz 100mA BC237B/238B BC237 BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239
BC237B Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B Text: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range	Original	PDF	BC237/238/239 BC237 BC238/239 100mA 100mA BC237B transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
993 395 pnp npn Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10	Original	PDF	BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
bc238 Abstract: No abstract text available Text: TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 3. EMITTER A BC237 50V BC238/239 30V Operating and storage junction temperature range	Original	PDF	BC237/238/239 BC237 BC238/239 BC238/itter 100mA 100mA 100MHz BC238 bc238
BC237B Abstract: BC237 BC307 TRANSISTOR bc237b BC307B transistor bc237 bc307 pnp BC237 Philips Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC237; BC237B NPN general purpose transistors Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN general purpose transistors	Original	PDF	M3D186 BC237; BC237B BC307; BC307B. MAM182 SCA55 117047/00/02/pp8 BC237B BC237 BC307 TRANSISTOR bc237b BC307B transistor bc237 bc307 pnp BC237 Philips
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	PDF	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
design smps 500 watt TL494 Abstract: 600 watt uc3844 smps schematic UC3842 smps design with TL431 250 watt uc3844 smps schematic MOSFET HALF BRIDGE SMPS AC TO DC USING TL494 p6n60e MC34063 Boost MOSFET uc3844 smps power supply mc34063 step up with mosfet transformer orega 40346 Text: SWITCHMODE t Power Supplies Reference Manual and Design Guide SMPSRM/D Rev. 0, 5/1999 SMPSRM Mfax is a trademark of Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation	Original	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	PDF
NPN Transistor BC548B Abstract: BC548 BC238B npn bc337-40 npn transistor Text: ALLEGRO MICROSYSTEMS INC 14 D • 0504330 00047^4 3 ■ ALGR T~^9-0\| SPRAGUE PROELECTRON T092J TRANSISTOR TYPES»! PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA BC212LB	OCR Scan	PDF	T092J BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB NPN Transistor BC548B BC548 BC238B npn bc337-40 npn transistor
NPN Transistor BC548B Abstract: transistor bc238b TP2369A t092 transistor pro-electron BCS48 Text: SPRAGUE/SEMICOND GROUP 14E D • T -U 'O I ÖS13ÖS0 □ □□ 47ei4 4 ■ SPRAGUE PROELECTRON T092 TRANSISTOR TYPES» PROELECTRON T092 TRANSISTOR TYPES Typ« No. Polarity Chip Process BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA	OCR Scan	PDF	BC167A BC167B BC168A BC168B BC168C BC169B BC169C BC182LA BC182LB BC212LA NPN Transistor BC548B transistor bc238b TP2369A t092 transistor pro-electron BCS48
SL 100 NPN Transistor Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE	OCR Scan	PDF	THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
TRANSISTOR C 460 Abstract: BC237B transistor bc237 TRANSISTOR bc237b Text: Philips Semiconductors Product specification NPN general purpose transistor BC237 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification.	OCR Scan	PDF	BC237 BC307. BC237 BC237B MBH724 TRANSISTOR C 460 transistor bc237 TRANSISTOR bc237b
TRANSISTOR BC 448 smd Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors	OCR Scan	PDF	BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
bc307b Abstract: transistor bc307b MAM231 BC307 Text: Philips Semiconductors Product specification PNP general purpose transistors BC307; BC307B FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector • General purpose switching and amplification.	OCR Scan	PDF	BC307; BC307B BC237 BC237B. MAM231 BC307 BC307B transistor bc307b MAM231

TRANSISTOR BC237B Search Results

TRANSISTOR BC237B Result Highlights (5)

TRANSISTOR BC237B Datasheets Context Search

TRANSISTOR bc237b

TRANSISTOR BC237b

BC237

transistor 238B

238b

TRANSISTOR 237b

TRANSISTOR 237b

Transistor BC239c

BC237

BC237B

993 395 pnp npn

bc238

BC237B

Q2N4401

BC548 TRANSISTOR REPLACEMENT

design smps 500 watt TL494

y51 h 120c

sx3704

NPN Transistor BC548B

NPN Transistor BC548B

SL 100 NPN Transistor

TRANSISTOR C 460

TRANSISTOR BC 448 smd

bc307b