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    TRANSISTOR BC635 Search Results

    TRANSISTOR BC635 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC635 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BC636

    Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
    Text: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


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    PDF BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR

    BC639

    Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
    Text: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1


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    PDF BC635 BC637 BC639 BC637 BC635 50MHz BC639 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


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    PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    high gain low voltage PNP transistor TO-92

    Abstract: Marking STMicroelectronics TO92 BC635-AP TRANSISTOR marking code 432 BC635 BC636 china tv schematic diagram TRANSISTOR MARKING CODE w0 TRANSISTOR MARKING 705
    Text: BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


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    PDF BC635 BC635-AP BC636 high gain low voltage PNP transistor TO-92 Marking STMicroelectronics TO92 BC635-AP TRANSISTOR marking code 432 BC635 BC636 china tv schematic diagram TRANSISTOR MARKING CODE w0 TRANSISTOR MARKING 705

    transistor C635

    Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
    Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


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    PDF BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147

    BC635

    Abstract: BC635-AP BC636
    Text: BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS


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    PDF BC635 BC635-AP BC636 BC635 BC635-AP BC636

    CTBC 635

    Abstract: 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC635 9AC TBC635 (Tin Finish Part) LEAD FREE TO-92 Plastic Package E CB High Current Transistor Complementary BC636 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)


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    PDF BC635 TBC635 BC636 C-120 TBC635Rev020505E CTBC 635 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16

    BC635

    Abstract: BC636 BC636-AP
    Text: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


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    PDF BC636 BC636-AP BC635 BC635 BC636 BC636-AP

    transistor C639

    Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
    Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips


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    PDF BC639; BCP56; BCX56 BC639 SC-43A* BC640 BCP56 OT223 SC-73 BCP53 transistor C639 transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table

    transistor c63716

    Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
    Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


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    PDF BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52

    BC635

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. BC635 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 .190 4.83 .170(4.33) Pinning o 1 = Emitter 2 = Collector


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    PDF BC635 500mA, 150mA, 50MHz BC635

    BC640

    Abstract: BC635
    Text: BC635 & BC640 General Purpose Transistor Features: • High performance, low frequency devices. • NPN/PNP Silicon Planar Epitaxial Transistors. • Driver Stages of Audio Amplifier Application. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33


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    PDF BC635 BC640 BC640 BC635

    BC639

    Abstract: No abstract text available
    Text: BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    PDF BC635 BC637 BC639 BC635 BC637 BC639

    bc639

    Abstract: BC635 BC637
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    PDF BC635 BC637 BC639 BC635 BC637 bc639

    bc639

    Abstract: BC637 BC639 application note bc639 equivalent transistor BC639 BC635 BC635 TRANSISTOR E C B
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    PDF BC635 BC637 BC639 BC635 BC637 bc639 BC639 application note bc639 equivalent transistor BC639 BC635 TRANSISTOR E C B

    bc639

    Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent C 14M

    bc639

    Abstract: BC637 BC635 BC635 TRANSISTOR E C B
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    PDF BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 BC635/637/639 Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES High current transistors 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    PDF BC635/637/639 BC635 BC637 BC639

    bc639

    Abstract: BC635 BC637 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Base 3.Collector TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter


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    PDF BC635 BC637 BC639 BC635 BC637 bc639 bc639 equivalent bc635 datasheet BC635 TRANSISTOR E C B BC639 datasheet transistor bc639 driver transistor hfe 60 BC639 collector

    bc736

    Abstract: transistor C 639 W bc639 BC635 BC637
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


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    PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736 transistor C 639 W bc639 BC635 BC637

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR "" TECHNICAL DATA BC636 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Bc635 Characteristic Collector-Emitter Voltage atRfiE=lKL! Collector-Emitter Voltage Collector-Emitter Voltage


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    PDF BC636 Bc635 -10mA -150mA -500mA -500mA -50mA -10mA 50MHz

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTCBNAHONAL ELECTRONICS LID . BC635 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Be636 ABSOLUTE MAXIMUM RATINGS at T«nh-2<»C Characteristic Collector-Emitter Voltage at Rb^ IK Q


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    PDF BC635 Be636 300uS, 100uA 150mA 500mA 500mA 30MHz

    BC639 collector

    Abstract: BC635 transistor 639 bc639 640 TRANSISTOR NPN transistor BC637 complement BC637
    Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25t; Characteristic Collector Emitter Voltage at R a E = 1K ohm Collector Emitter Voltage Collector Emitter Voltage


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    PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 BC639 collector transistor 639 640 TRANSISTOR NPN transistor BC637 complement