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    TRANSISTOR BC636 Search Results

    TRANSISTOR BC636 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BC636 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor BC636

    Abstract: BC635 BC636 BC636BU BC636TA BC636TAR BC636TF BC636TFR
    Text: BC636 PNP Epitaxial Silicon Transistor BC636 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC635 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


    Original     		PDF BC636 BC636 BC635 transistor BC636 BC635 BC636BU BC636TA BC636TAR BC636TF BC636TFR

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    BC635

    Abstract: BC636 BC636-AP
    Text: BC636 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC636 BC636 TO-92 / Bulk BC636-AP BC636 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR PNP TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


    Original     		PDF BC636 BC636-AP BC635 BC635 BC636 BC636-AP

    CTBC 635

    Abstract: 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR BC635 9AC TBC635 (Tin Finish Part) LEAD FREE TO-92 Plastic Package E CB High Current Transistor Complementary BC636 ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)


    Original     		PDF BC635 TBC635 BC636 C-120 TBC635Rev020505E CTBC 635 635-16 TBC635-16 TBC635 63516 cbc635 BC635 TRANSISTOR E C B BC635 BC635-10 BC635-16

    high gain low voltage PNP transistor TO-92

    Abstract: Marking STMicroelectronics TO92 BC635-AP TRANSISTOR marking code 432 BC635 BC636 china tv schematic diagram TRANSISTOR MARKING CODE w0 TRANSISTOR MARKING 705
    Text: BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 • ■ ■ / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY


    Original     		PDF BC635 BC635-AP BC636 high gain low voltage PNP transistor TO-92 Marking STMicroelectronics TO92 BC635-AP TRANSISTOR marking code 432 BC635 BC636 china tv schematic diagram TRANSISTOR MARKING CODE w0 TRANSISTOR MARKING 705

    transistor C635

    Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
    Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


    Original     		PDF BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147

    BC635

    Abstract: BC635-AP BC636
    Text: BC635 SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment BC635 BC635 TO-92 / Bulk BC635-AP BC635 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS


    Original     		PDF BC635 BC635-AP BC636 BC635 BC635-AP BC636

    639 TRANSISTOR PNP

    Abstract: bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


    Original     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 639 TRANSISTOR PNP bc636 BC640 Diode bc640 BC638 638 transistor transistor BC637 complement

    BC640

    Abstract: bc636 BC638 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA BC640 transistor bC636 BC636-10 BC636-16 BC638-16 BC640-16 bc638 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC636,BC638,BC640 TRANSISTOR PNP TO-92 FEATURES High current transistors 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO VCEO Parameter


    Original     		PDF BC636 BC638 BC640 BC636 BC638 150mA

    BC635

    Abstract: BC636 BC638 BC640
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/637/639 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector Emitter Voltage at RBE=1Kohm Collector Emitter Voltage Collector Emitter Voltage


    Original     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 BC636 BC638 BC640

    BC640

    Abstract: bc636 bc638 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP
    Text: BC636/BC638/BC640 Transistor PNP TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features — High current transistors MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value Units -45 BC636


    Original     		PDF BC636/BC638/BC640 BC636 BC638 BC640 bc636 transistor bc640 pnp bc640 transistor Bc638 transistor PNP

    c63610

    Abstract: transistor C636 BC635 BC636 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 08 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1. Product overview Type number[1] Package NPN complement NXP JEITA


    Original     		PDF BC636; BCP51; BCX51 BC636 SC-43A BC635 BCP51 OT223 SC-73 BCP54 c63610 transistor C636 BC635 BC636-10 BCP51 BCP54 BCX51 BCX54 SC-43A

    BC635 ECB

    Abstract: BC638
    Text: BC636/638/640 BC636/638/640 Switching and Amplifier Applications • Complement to BC635/637/639 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640 BC635 ECB BC638

    bc736

    Abstract: bc635 BC637 BC639
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc736 bc635 BC637 BC639

    NPN transistor ECB TO-92

    Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement

    bc639

    Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild

    transistor C 639 W

    Abstract: No abstract text available
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 transistor C 639 W

    bc635

    Abstract: transistor C 639 W
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W

    BC635

    Abstract: bc639 BC637
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


    Original     		PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 BC635 bc639 BC637

    c63610

    Abstract: bc636 BCX51 c636 philips
    Text: BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors Rev. 06 — 29 March 2006 Product data sheet 1. Product profile 1.1 General description PNP medium power transistor series. Table 1: Product overview Type number [1] Package NPN complement Philips


    Original     		PDF BC636; BCP51; BCX51 BC636 BCP51 SC-43A SC-73 SC-62 O-243 c63610 bc636 BCX51 c636 philips

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR "" TECHNICAL DATA BC636 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS * Complement to Bc635 Characteristic Collector-Emitter Voltage atRfiE=lKL! Collector-Emitter Voltage Collector-Emitter Voltage


    OCR Scan     		PDF BC636 Bc635 -10mA -150mA -500mA -500mA -50mA -10mA 50MHz

    Untitled

    Abstract: No abstract text available
    Text: BC636/638/640 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • Complement to BC635/637/639 ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic C ollector Emitter Voltage: at R B E = 1Kohm : : Collector Emitter Voltage: : :


    OCR Scan     		PDF BC636/638/640 BC635/637/639 BC636 BC638 BC640