MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
PDF
|
|
KIA78*pI
Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
KIA78*pI
transistor
KIA78*p
TRANSISTOR 2N3904
khb*9D5N20P
khb9d0n90n
KID65004AF
TRANSISTOR mosfet
KIA7812API
khb*2D0N60P
|
khb*9D5N20P
Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC
|
Original
|
PDF
|
2N2904E
BC859
KDS135S
2N2906E
BC860
KAC3301QN
KDS160
2N3904
BCV71
KDB2151E
khb*9D5N20P
khb9d0n90n
6v Zener diode
khb*2D0N60P
transistor
KHB7D0N65F
BC557 transistor
kia*278R33PI
KHB9D0N90N circuit
ktd998 transistor
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
PDF
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
BC638
Abstract: transistor bc638 BC637 BC638BU BC638TA BC638TF BC638TFR Bc638 transistor PNP
Text: BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC637 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter
|
Original
|
PDF
|
BC638
BC638
BC637
transistor bc638
BC637
BC638BU
BC638TA
BC638TF
BC638TFR
Bc638 transistor PNP
|
BC639
Abstract: BC637 bc639 equivalent BC639-10 40250 Transistor TRANSISTOR BC639 bc637 transistor BC637-16 BC639 datasheet bc639-16 datasheet
Text: BC635 / BC637 / BC639 NPN Type Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURE High current transistor 3.5±0.2 14.3±0.2 4.5±0.2 4.55±0.2 0.43+0.08 –0.07 0.46+0.1
|
Original
|
PDF
|
BC635
BC637
BC639
BC637
BC635
50MHz
BC639
bc639 equivalent
BC639-10
40250 Transistor
TRANSISTOR BC639
bc637 transistor
BC637-16
BC639 datasheet
bc639-16 datasheet
|
TRANSISTORS BJT bc548
Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002
|
Original
|
PDF
|
OT-623F
OT-323
OT-23
OT-89
OT-223
O-92S
O-226AE
O-92L
TRANSISTORS BJT bc548
jfet selection guide
J210 D2 PAK
PN4302
TN2102A
BJT BC546
FJN965
MPF102 JFET data sheet
KSP13
ks3302
|
transistor c63716
Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement
|
Original
|
PDF
|
BC637;
BCP55;
BCX55
BC637
SC-43A
BC638
BCP55
OT223
SC-73
BCP52
transistor c63716
c637 transistor
c63716
transistor C637
bc638 equivalent
bc639 equivalent
BC637
BC638
BCP52
BCX52
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES 2000. 10. 2 Revision No : 0 1/1
|
Original
|
PDF
|
BC637
|
BC639
Abstract: No abstract text available
Text: BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC
|
Original
|
PDF
|
BC635
BC637
BC639
BC635
BC637
BC639
|
bc639
Abstract: BC635 BC637
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC
|
Original
|
PDF
|
BC635
BC637
BC639
BC635
BC637
bc639
|
bc639
Abstract: BC637 BC639 application note bc639 equivalent transistor BC639 BC635 BC635 TRANSISTOR E C B
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC
|
Original
|
PDF
|
BC635
BC637
BC639
BC635
BC637
bc639
BC639 application note
bc639 equivalent
transistor BC639
BC635 TRANSISTOR E C B
|
bc639
Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC
|
Original
|
PDF
|
BC635
BC637
BC639
BC635
BC637
bc639
BC635 TRANSISTOR E C B
bc639 equivalent
C 14M
|
bc639
Abstract: BC637 BC635 BC635 TRANSISTOR E C B
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC
|
Original
|
PDF
|
BC635
BC637
BC639
BC635
BC637
bc639
BC635 TRANSISTOR E C B
|
|
bc639
Abstract: BC637 BC635 TRANSISTOR E C B BC635 bc639 equivalent
Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Medium Power Transistors for driver stages of audio / video amplifiers 1.Emitter 2.Collector 3.Base TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter
|
Original
|
PDF
|
BC635
BC637
BC639
BC635
BC637
bc639
BC635 TRANSISTOR E C B
bc639 equivalent
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC638. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 5
|
Original
|
PDF
|
BC637
BC638.
150mA
500mA,
500mA
100MHz
Width300
|
BC637
Abstract: BC638
Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A Complementary to BC637. N E K J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO
|
Original
|
PDF
|
BC638
BC637.
-150mA
-500mA,
-50mA
-500mA
-50mA,
100MHz
BC637
BC638
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ・Complementary to BC637. N E K SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO
|
Original
|
PDF
|
BC638
BC637.
-10mA,
-150mA
-500mA,
-50mA
-500mA
-50mA,
100MHz
Width300
|
BC637
Abstract: BC638
Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A ᴌComplementary to BC637. N E K MAXIMUM RATING Ta=25ᴱ J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60
|
Original
|
PDF
|
BC638
BC637.
-150mA
-500mA,
-50mA
-500mA
-50mA,
100MHz
BC637
BC638
|
c63716
Abstract: transistor c63716 C637 C-63716 BC637 BC637-16 BC638 BCP52 BCP55 BCX52
Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistors Rev. 07 — 25 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA
|
Original
|
PDF
|
BC637;
BCP55;
BCX55
BC637
SC-43A
BC638
BCP55
OT223
SC-73
BCP52
c63716
transistor c63716
C637
C-63716
BC637-16
BC638
BCP52
BCP55
BCX52
|
y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
|
OCR Scan
|
PDF
|
500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
|
BC637
Abstract: BC638
Text: SEMICONDUCTOR TECHNICAL DATA BC638 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC637. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
OCR Scan
|
PDF
|
BC638
BC637.
-10mA,
-100juA,
-10J/A,
150mA
--500mA,
-50mA
--500mA
-50mA,
BC637
BC638
|
BC637
Abstract: BC638
Text: SEMICONDUCTOR TECHNICAL DATA BC637 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC638. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
OCR Scan
|
PDF
|
BC637
BC638.
100j/A,
10j/A,
150mA
500mA,
500mA
100MHz
BC637
BC638
|
transistor C639
Abstract: transistor C635 c639 transistor C639 w
Text: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635
|
OCR Scan
|
PDF
|
BC635/637/639
BC635/638/640
BC635
BC637
BC639
transistor C639
transistor C635
c639
transistor C639 w
|