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    TRANSISTOR BCP69 Search Results

    TRANSISTOR BCP69 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BCP69 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCP68

    Abstract: BCP69T1 BCP69T3
    Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		PDF BCP69T1 OT-223 BCP69T1/D BCP68 BCP69T1 BCP69T3

    BCP68

    Abstract: BCP69 BCP69-10 BCP69-16 BCP69-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification PNP medium power transistor


    Original     		PDF M3D087 BCP69 OT223 BCP68. MAM288 SCA53 117047/00/02/pp8 BCP68 BCP69 BCP69-10 BCP69-16 BCP69-25

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 1 SOT-223 APPLICATIONS * General purpose switching and amplification


    Original     		PDF BCP69 BCP68 OT-223 BCP69L BCP69-xx-AA3-F-R BCP69L-xx-AA3-F-R OT-223 BCP69L-xx-AA3-F-R QW-R207-009

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR  FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68  1 SOT-223 APPLICATIONS * General purpose switching and amplification


    Original     		PDF BCP69 BCP68 OT-223 BCP69G-xx-AA3-R QW-R207-009

    Untitled

    Abstract: No abstract text available
    Text: UTC BCP69 PNP EPITAXIAL SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.


    Original     		PDF BCP69 OT-223 QW-R207-009

    BCP68

    Abstract: BCP68-25 BCP69 transistor k 620
    Text: UTC BCP68 NPN EPITAXIAL SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V) * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification under high current conditions. 1 SOT-223


    Original     		PDF BCP68 BCP69 OT-223 QW-R207-008 BCP68 BCP68-25 BCP69 transistor k 620

    Untitled

    Abstract: No abstract text available
    Text: BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP69T1G, NSVBCP69T1G BCP69T1/D

    BCP68

    Abstract: BCP69T1 BCP69T1G
    Text: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features


    Original     		PDF BCP69T1 OT-223 BCP68 BCP68 BCP69T1 BCP69T1G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 „ 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current


    Original     		PDF BCP68 BCP69 OT-223 BCP68L-xx-AA3-R BCP68G-xx-AA3-R OT-223 QW-R207-008

    BCP69T1G

    Abstract: AYW marking code IC
    Text: BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP69T1G, NSVBCP69T1G OT-223 BCP68 AEC-Q101 BCP69T1/D BCP69T1G AYW marking code IC

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


    Original     		PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1999 Apr 08 2002 Nov 15 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D087 BCP69 OT223 BCP68. MAM288 OT223) SCA74 613514/04/pp8 BCP68 BCP69 BCP69-16 BCP69-25 SC-73

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP69 PNP medium power transistor Product specification Supersedes data of 1997 Mar 12 1999 Apr 08 Philips Semiconductors Product specification PNP medium power transistor BCP69 FEATURES PINNING • High current max. 1 A


    Original     		PDF M3D087 BCP69 OT223 BCP68. MAM288 OT223) SCA63 115002/00/03/pp8 BCP68 BCP69 BCP69-16 BCP69-25 BP317

    bcp69t1g

    Abstract: Transistor BFR 38 AYW marking code IC BCP68
    Text: BCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. http://onsemi.com


    Original     		PDF BCP69T1G OT-223 BCP68 BCP69T1/D bcp69t1g Transistor BFR 38 AYW marking code IC BCP68

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR  FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69  1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current


    Original     		PDF BCP68 BCP69 OT-223 BCP68G-xx-AA3-R QW-R207-008

    AYW marking code IC

    Abstract: BCP68 BCP69T1 BCP69T1G
    Text: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. http://onsemi.com


    Original     		PDF BCP69T1 OT-223 BCP68 BCP69T1/D AYW marking code IC BCP68 BCP69T1 BCP69T1G

    sot223-4

    Abstract: sot-223-4 2234
    Text: BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223−4 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP69T1 OT-223-4 BCP69T1 inch/1000 BCP69T3 inch/4000 sot223-4 sot-223-4 2234

    sot223-4

    Abstract: BCP69T1 BCP69T3 Pb-Free Marking Codes BCP68 BCP69T1G
    Text: BCP69T1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223−4 package, which is designed for medium power surface mount applications.


    Original     		PDF BCP69T1 OT-223-4 BCP69T1 inch/1000 BCP69T3 inch/4000 BCP69T1/D sot223-4 Pb-Free Marking Codes BCP68 BCP69T1G

    BCP69 TRANSISTOR equivalent

    Abstract: BCP69 UA-60
    Text: BCP69 PNP Transistor Elektronische Bauelemente Silicon Epitaxial Transistor RoHS Compliant Product SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1A REF. Date Code A C D E I H


    Original     		PDF BCP69 OT-223 BCP69 -100mA -500mA 01-Jun-2002 BCP69 TRANSISTOR equivalent UA-60

    BCP68

    Abstract: BCP69T1 BCP69T1G
    Text: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. http://onsemi.com


    Original     		PDF BCP69T1 OT-223 BCP68 BCP69T1/D BCP68 BCP69T1 BCP69T1G

    BCP68

    Abstract: BCP69 BCP69-16 BCP69-25 SC-73
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69


    Original     		PDF M3D087 BCP69 SCA75 R75/05/pp14 BCP68 BCP69 BCP69-16 BCP69-25 SC-73

    BCP68

    Abstract: BCP69
    Text: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 „ 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current


    Original     		PDF BCP68 BCP69 OT-223 BCP68L BCP68G BCP68-xx-AA3-R BCP68L-xx-AA3-R BCP68G-xx-AA3-R QW-R207-008 BCP68 BCP69

    bcp68t1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		PDF BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCP69 PNP medium power transistor 1999 Apr 08 Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP medium power transistor BCP69


    OCR Scan     		PDF BCP69 OT223 BCP68. MAM288 OT223) 115002/00/03/pp8