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    TRANSISTOR BD 180 Search Results

    TRANSISTOR BD 180 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 180 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    bd175

    Abstract: bd177
    Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO


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    PDF BD175/177/179 O-126 BD175 BD177 BD179 BD179 bd175 bd177

    BD178

    Abstract: BD176 BD180 transistor bd176
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180 transistor bd176

    BD175

    Abstract: No abstract text available
    Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD175/177/179 O-126 BD175 BD177 BD179 BD179 BD175

    transistor bd176

    Abstract: BD176 BD178 BD180 transistor BD 325
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 transistor bd176 BD176 BD178 BD180 transistor BD 325

    equivalent bd177

    Abstract: BD175 BD177 BD179
    Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD175/177/179 O-126 BD175 BD177 BD179 equivalent bd177 BD175 BD177 BD179

    BD176

    Abstract: transistor bd176
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 BD180 BD176 transistor bd176

    BD178

    Abstract: BD176 BD180
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 BD178 BD176 BD180

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 BD180

    Untitled

    Abstract: No abstract text available
    Text: Rev.4.0_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM


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    PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57

    ic 8355

    Abstract: 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2
    Text: Rev.4.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM


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    PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57 ic 8355 6 pin current control forward dc to dc converter S-8355M50MC-MDJ-T2 pin diagram of 8355 S-8355M50MC 3.40 pf variable capacitor S-8356Q50MC-OVJ-T2 power pwm switch S-8357B32MC-NQR-T2 S-8357B50MA-NJJ-T2

    Untitled

    Abstract: No abstract text available
    Text: Rev.2.1_00 SUPER-SMALL PACKAGE PWM CONTROL, PWM/PFM SWITCHING CONTROL STEP-UP SWITCHING REGULATOR S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator which mainly consists of a reference voltage source, an oscillation circuit, an error amplifier, a phase compensation circuit, a PWM


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    PDF S-8355/56/57/58 S-8355/57) S-8356/58) S-8355/57

    BDX 241

    Abstract: BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905
    Text: TOP-3 general purpose transistor selector guide y guide de sélection transistors TO P-3 usage général THOMSON-CSF ^ \ \ C E O (sus 45V 60V 80V 100V BD 249 BD 249A BD 249B BD 249C BD 250 BD 250A BD 250B BD 250C Case 25 A T0-220AB general purpose transistor selector guide


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    PDF T0-220AB O-220AB 5-40V BD710 CB-19 BDX 241 BD 35 transistor 3055 transistor TRANSISTOR BDX transistor 3055 transistor BUx 49 transistor BD 140 TRANSISTOR BDX 14 transistor 2N 3055 transistor bd 905

    transistor BD 110

    Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
    Text: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal


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    PDF fl235bQ5 Q62702-D905 Q62902-B63 Q62902-B62 transistor BD 110 0437 Q62902-B62 transistor BD 524

    transistor bd176

    Abstract: bd178 bd180 E434
    Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Collector Emitter Voltage Rating Unit -45


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    PDF BD176/178/180 O-126 BD176 BD178 BD180 150mA 250mA transistor bd176 bd178 bd180 E434

    TRANSISTOR 431

    Abstract: transistor 431 c BD177
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively VABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Symbol : BD175 : BD177 Rating VcBO : BD179 Collector Emitter Voltage


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    PDF BD175/177/179 BD175 BD177 BD179 BD179 300uS, 150mA 250mA TRANSISTOR 431 transistor 431 c BD177

    bd177

    Abstract: BD175
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175


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    PDF BD175/177/179 BD175 BD177 BD179

    transistor bd 180

    Abstract: BD transistor BD 176 transistor bd176
    Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol ’ C ollector Base Voltage : BD176 : BD178 C ollector E m itter Voltage


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    PDF BD176/178/180 transistor bd 180 BD transistor BD 176 transistor bd176

    Untitled

    Abstract: No abstract text available
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ’ C ollector Base V oltage Sym bol Rating Unit 45 V : BD177 60 V : BD179


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    PDF BD175/177/179 BD177 BD179 BD175 300ns,

    Untitled

    Abstract: No abstract text available
    Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ’ C ollector Base V oltage Sym bol Rating Unit - 45 V - 60 V - 80 V - 45


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    PDF BD176/178/180 BD178 BD180 BD176

    BD transistor

    Abstract: BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD
    Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80


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    PDF BD175/177/179 100mA, 150mA 250mA 300ns, BD transistor BD NPN transistors BD175 transistor bd 126 BD 175 transistor transistor BD

    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    PDF BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715

    transistor D 2394

    Abstract: f173 fp302
    Text: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.


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    PDF FP302 FP302 2SC4520 SB05-05CP, 470//F transistor D 2394 f173

    transistor SE 431

    Abstract: No abstract text available
    Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS T O -126 • C om plem en t to B D 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B a se V o lta g e Sym bol : BD176 Rating Unit


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    PDF BD176/178/180 BD176 BD178 transistor SE 431