TRANSISTOR BD 237 Search Results

TRANSISTOR BD 237 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BD 237 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BD234 Abstract: bd238 bd238 equivalent BD236 Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol Rating Unit - 45 V : BD236 - 60 V : BD238	Original	PDF	BD234/236/238 O-126 BD236 BD238 BD234 BD234 bd238 bd238 equivalent BD236
BD233 Abstract: BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES yComplement to BD 234/236/238 respectively MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage	Original	PDF	O-126 BD233/235/237 O-126 BD233 BD235 BD237 BD233 BD235 BD237 transistor 45 f 123 bd233 T BD235 TRANSISTOR
bd237 Abstract: BD233 Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units	Original	PDF	BD233/235/237 O-126 BD233 BD235 BD237 bd237 BD233
transistor BD 325 Abstract: BD235STU Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD233/235/237 O-126 BD233 BD235 BD237 transistor BD 325 BD235STU
transistor BD 325 Abstract: No abstract text available Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD234/236/238 O-126 BD234 BD236 BD238 transistor BD 325
BD233 Abstract: BD235 BD237 Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD233/235/237 O-126 BD233 BD235 BD237 BD233 BD235 BD237
BD233 Abstract: BD235 BD237 Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD233/235/237 O-126 BD233 BD235 BD237 BD233 BD235 BD237
BD234 Abstract: bd238 equivalent BD236 BD238 Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD234/236/238 O-126 BD234 BD236 BD238 BD234 bd238 equivalent BD236 BD238
bd234 Abstract: No abstract text available Text: BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications • Complement to BD 233/235/237 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol	Original	PDF	BD234/236/238 O-126 BD234 BD236 BD238 bd234
BD237 Abstract: bd235 Text: BD233/235/237 NPN TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.200 3 10.60 0 11.00 0 2 0.000 0.300 1 Features 3.900 4.100 3.000 3. BASE 2.100 2.300 Complement to BD 234/236/238 respectively 1.170 1.370 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	BD233/235/237 O-126 O-126 BD233 BD235 BD237
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1012S20 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1012S20 is designed for L-Band avionics systems operating at 1025 to 1150 MHz. While operating	Original	PDF	IB1012S20 IB1012S20 IB1012S20-REV-NC-DS-REV-NC
bd 142 transistor Abstract: No abstract text available Text: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of	Original	PDF	IB0912L200 IB0912L200 IB0912L200-REV-NC-DS-REV-C bd 142 transistor
Untitled Abstract: No abstract text available Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol BD234 Rating VcBO BD236 BD238 Collector Emitter Voltage	OCR Scan	PDF	BD234/236/238 BD234 BD236 BD238
60V transistor npn 1a Abstract: No abstract text available Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage : BD233 Symbol Rating VcBO : BD235 : BD237 Unit 45 V	OCR Scan	PDF	BD233/235/237 BD235 BD237 BD233 60V transistor npn 1a

c251c Abstract: BD238 BD234 Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Rating Unit -45 -60 V V -100 V -45 -60 V VcER	OCR Scan	PDF	BD234/236/238 O-126 BD234 BD236 BD238 c251c
BD233 Abstract: BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V C ollector Base Voltage	OCR Scan	PDF	BD233/235/237 BD233 BD235 BD237 BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR
Untitled Abstract: No abstract text available Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V : BD235 60 V : BD237 80	OCR Scan	PDF	BD233/235/237 BD235 BD237 BD233
Untitled Abstract: No abstract text available Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 233/235/237 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BD234 Rating V cbO BD236 BD238 C ollecto r E m itter Voltage	OCR Scan	PDF	BD234/236/238 BD234 BD238 BD236
transistor bd 126 Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711 Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe^ T -^ -O S Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available	OCR Scan	PDF	DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
TRANSISTOR BC 136 Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711 Text: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available	OCR Scan	PDF	T-33-17 DIN125A 15A3DIN TRANSISTOR BC 136 transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
transistor BU 5027 Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im	OCR Scan	PDF	KT315 Indikatoransteuerung02 136/G ASZ1016 transistor BU 5027 transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor Transistor KU 607 MDA 2020 RFT e 355 d
bc 540 Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0	OCR Scan	PDF	BC1611) BCY58 BCY59 BD1361) BD436' BC432' BC547 bc 540 TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan	PDF
ym 238 Abstract: transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237 Text: "nOTOROLA SC -CXSTRS/R F> 6367254 MOTOROLA SC Tt 9 6D 8 0 5 7 3 CXSTRS/R F D T-33-09 BD233 BD235 BD237 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2 AMPERE POWER TRANSISTOR P LA STIC M E D IU M POW ER S IL IC O N N P N TR A N S IS TO R NPN SILICO N . . . designed for use in 5 to 10 Watt audio amplifiers and drivers	OCR Scan	PDF	T-33-09 BD233 BD235 BD237 3b7254 ym 238 transistor 237 Bo 235 transistor bd 126 BD237 transistor sc 238 motorola transistor m 237 BO237

TRANSISTOR BD 237 Search Results

TRANSISTOR BD 237 Result Highlights (5)

TRANSISTOR BD 237 Datasheets Context Search

BD234

BD233

bd237

transistor BD 325

transistor BD 325

BD233

BD233

BD234

bd234

BD237

Untitled

bd 142 transistor

Untitled

60V transistor npn 1a

c251c

BD233

Untitled

Untitled

transistor bd 126

TRANSISTOR BC 136

transistor BU 5027

bc 540

transistor kt 326

ym 238