2sc 103 transistor
Abstract: transistor BD 430
Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in
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Q62702-D1069
-T-33-OS
fl23SbQS
BD429
2sc 103 transistor
transistor BD 430
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transistor BD 430
Abstract: 0436L
Text: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in
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fl23Sb05
0D043fal
0436L
fl335b05
Q0043b2
transistor BD 430
0436L
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Untitled
Abstract: No abstract text available
Text: y i / i y j x i y n -48V to +5V Output Switching DC-DC Converter _ G eneral Description _ Features The MAX650 is a low -pow er fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. All control functions and a 140V,
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MAX650
250mA
AX650
388mm)
MAX650
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transistor BU 5027
Abstract: transistor KT 816 transistor SD 5024 J 5027-R bu 5027 KT 817 transistor KT315 Transistor KU 607 MDA 2020 RFT e 355 d
Text: SERVICE-MITTEILUNGEN VEB IN D U ST RIEV ERT RIEB R U N D FU N K UND FE R N SE H EN NOV/DEZ B l Iradi o -teievlsion I 1 9 IO 8 0 SEITE 1-8 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S Änderung am Kassettenrecorder ELKKTRONTKA - 302 Der Sowjet. Hersteller hat im
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KT315
Indikatoransteuerung02
136/G
ASZ1016
transistor BU 5027
transistor KT 816
transistor SD 5024
J 5027-R
bu 5027
KT 817 transistor
Transistor KU 607
MDA 2020
RFT e 355 d
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S-8358B36MC-NQVT2G
Abstract: pin diagram of 8355 nichicon capacitor bd S-8355Q45MC-OXET2G S-8355M50MC s-8358b40mc-nqzt2 s-8358b40mc-nqzt2g S-8355M65MC-MDYT2G S-8355Q30MC-OWPT2G S-8357B30MA-NIPT2G
Text: Rev.6.6_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an
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S-8355/56/57/58
S-8355/57
S-8356/58
S-8358B36MC-NQVT2G
pin diagram of 8355
nichicon capacitor bd
S-8355Q45MC-OXET2G
S-8355M50MC
s-8358b40mc-nqzt2
s-8358b40mc-nqzt2g
S-8355M65MC-MDYT2G
S-8355Q30MC-OWPT2G
S-8357B30MA-NIPT2G
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transistor kt 326
Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice
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Untitled
Abstract: No abstract text available
Text: S V IS llK A S V l -48V to + 5V O utput S w itch in g DC-DC C otnrm ter The MAX650 is a low-power fixed +5V output switching DC-DC converter designed for operation from very high negative input voltages. Alt control functions and a 120V, 250mA PNP transistor are contained in this device, re
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MAX650
250mA
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Untitled
Abstract: No abstract text available
Text: BSS83 _ _ Jv _ MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.
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BSS83
OT143
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transistor d 1557
Abstract: No abstract text available
Text: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.
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BSS83
OT143
transistor d 1557
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transistor BD 430
Abstract: Depletion
Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.
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bbS3T31
BSD20
BSD22
OT-143
transistor BD 430
Depletion
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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BLX14
Abstract: philips Fxc 3 b philips blx14 transistor EP 430 toroid LA Toroid International AB ES28 transistor application VCE28 neutralization push-pull
Text: m b5E D 711DöSb DQb3H50 430 • PHIN BLX14 PHILIPS INTERNATIONAL J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, A B and B operated transmitting equipment in the h.f. and v.h.f. band. • rated for 50 W P.E.P. at 1,6 M H z to 28 M H z
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BLX14
BLX14
philips Fxc 3 b
philips blx14
transistor EP 430
toroid LA
Toroid International AB
ES28
transistor application
VCE28
neutralization push-pull
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si9663
Abstract: si96
Text: BD244, BD244A, BD244B, BD244C HARRIS SEMICOND SECTOR File Number SbE D • 674 4302271 DOMObTQ ÔDT « H A S Epitaxial-Base Silicon P-N-P VERSAWATT Transistors For Power-Amplif ier and High-Soeed-Switching Applications Features: ■ 66 W at 25°C case temperature
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BD244,
BD244A,
BD244B,
BD244C
BD243,
BD243A,
BD243B,
BD243C
si9663
si96
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Keithley s900
Abstract: n4212 Keithley 7700 N4050 3B103 3B159 N 4212 transistor N4212 RT9602 BdP 285
Text: DATE D’ORIGINE DATE ORIGINATED AUTEUR/ORIGINATOR: RT96-024 MARCH 22 1996 SEMICONDUCTOR OBJECT/SUBJECT: NUMÉRO DE RAPPORT REPORT NUMBER PAGE / SHEET 1 de/ of 80 Final Electrical Parameter Capability and Design Rule Evaluation of the 1.2 µm N-Well Single Poly Double Metal Process.
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RT96-024
enviro1995,
Keithley s900
n4212
Keithley 7700
N4050
3B103
3B159
N 4212
transistor N4212
RT9602
BdP 285
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Untitled
Abstract: No abstract text available
Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.
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BSD22
OT-143
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BDT62B
Abstract: No abstract text available
Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,
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BDT62;
BDT62B;
O-220
BDT63,
bbS3T31
BDT62B
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bpx28
Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Text: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten
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Untitled
Abstract: No abstract text available
Text: LT3513 2MHz High Current 5-Output Regulator for TFT-LCD Panels FEATURES n n n n n n n n n n n DESCRIPTION 4.5V to 30V Input Voltage Range Four Integrated Switches: 2.2A Buck, 1.5A Boost, 0.25A Boost, 0.25A Inverter Guaranteed Minimum Current Limit External NPN LDO Driver
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LT3513
38-Lead
38-pin
DFN12
LT3591
LT3595
16-Channel
QFN56
3513fc
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MARKING TRANSISTOR BD RC
Abstract: sumida lcd inverter pin diagram inductor sp Schottky Diode 40V 5A Schottky Diode 50V 3A Sumida LCD Inverter switcher dip 4 contact
Text: LT3513 2MHz High Current 5-Output Regulator for TFT-LCD Panels FEATURES DESCRIPTION n The LT 3513 5-output adjustable switching regulator provides power for large TFT-LCD panels. The 38-pin 5mm x 7mm QFN device can generate a 3.3V or 5V logic supply along with the triple output supply required for the
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LT3513
38-pin
DFN12
LT3591
LT3595
16-Channel
QFN56
3513fa
MARKING TRANSISTOR BD RC
sumida lcd inverter pin diagram
inductor sp
Schottky Diode 40V 5A
Schottky Diode 50V 3A
Sumida LCD Inverter
switcher dip 4 contact
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Untitled
Abstract: No abstract text available
Text: LT3513 2MHz High Current 5-Output Regulator for TFT-LCD Panels Features Description 4.5V to 30V Input Voltage Range n Four Integrated Switches: 2.2A Buck, 1.5A Boost, 0.25A Boost, 0.25A Inverter Guaranteed Minimum Current Limit n External NPN LDO Driver
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LT3513
38-Lead
38-pin
DFN12
LT3591
LT3595
16-Channel
QFN56
3513fc
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E142 wafer format
Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001 SCILLC, 2001 Previous Edition 2000 “All Rights Reserved”
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DL140/D
Jan-2001
r14525
E142 wafer format
HEL32
MR 4710 IC
300w power amplifier circuit diagram
HEL05
klt22
HEL12 HEL31
HEL16
HLT22
HLT28
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Untitled
Abstract: No abstract text available
Text: LT3682 1A Micropower Step-Down Switching Regulator FEATURES n n n n n n n n n n n DESCRIPTION Wide Input Range: Operation from 3.6V to 36V Overvoltage Lockout Protects Circuits through 60V Transients 1A Output Current Low Ripple Burst Mode Operation IQ = 75 A at 12VIN to 3.3VOUT
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LT3682
12VIN
15mVP-P
250kHz
300kHz
12-Pin
36VTSSOP16E
LT3684
850mA,
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LT3695-3
Abstract: LT3695E LT3695SW Sanyo POSCAP
Text: LT3695 Series 1A Fault Tolerant Micropower Step-Down Regulator FEATURES n n n n n n n n n n n DESCRIPTION Wide Input Range: Operation from 3.6V to 36V Overvoltage Lockout Protects Circuits Through 60V Transients FMEA Fault Tolerant: Output Stays at or Below Regulation Voltage
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LT3695
15mVP-P)
12VIN
250kHz
300kHz
16-Pin
LT1976/LT1977
200kHz/500kHz,
TSSOP-16E
LT1936
LT3695-3
LT3695E
LT3695SW
Sanyo POSCAP
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Untitled
Abstract: No abstract text available
Text: LT3695 Series 1A Fault Tolerant Micropower Step-Down Regulator FEATURES n n n n n n n n n n n DESCRIPTION Wide Input Range: Operation from 3.6V to 36V Overvoltage Lockout Protects Circuits Through 60V Transients FMEA Fault Tolerant: Output Stays at or Below Regulation Voltage
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LT3695
15mVP-P)
12VIN
250kHz
300kHz
16-Pin
200kHz/500kHz,
TSSOP-16E
LT1936
500kHz
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