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    TRANSISTOR BD 677A Search Results

    TRANSISTOR BD 677A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BD 677A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD676

    Abstract: BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682
    Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, BD676 BD682 cross reference BD682 equivalent transistor BD 680 BD676 time failure transistor Bd682

    BD 139 transistor

    Abstract: BD676 BD678 BD676 equivalent BD675 BD676A BD678A BD680 BD680A BD682
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676/D* BD676/D BD 139 transistor BD676 BD678 BD676 equivalent BD675 BD676A BD678A BD680 BD680A BD682

    BD675 MOTOROLA

    Abstract: BD675 BD676 BD676A BD678 BD678A BD680 BD680A BD682 transistor BD 680
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676/D* BD676/D BD675 MOTOROLA BD675 BD676 BD676A BD678 BD678A BD680 BD680A BD682 transistor BD 680

    motorola 803 transistor

    Abstract: BD675 MOTOROLA BD675 MJE 802 transistor bd679 transistor BD675 motorola mje transistor BD677 BD677 BD679
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD675/D* BD675/D motorola 803 transistor BD675 MOTOROLA BD675 MJE 802 transistor bd679 transistor BD675 motorola mje transistor BD677 BD677 BD679

    bd681 TRANSISTOR

    Abstract: darlington bd transistor BD675 BD677 BD675 BD 677 DATASHEET BD675-D npn darlington transistor 150 watts BD675A BD676
    Text: ON Semiconductor BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — • • hFE = 750 Min) @ IC


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    PDF BD675 BD675A BD677 BD677A BD679 BD679A BD681* BD675, BD676, r14525 bd681 TRANSISTOR darlington bd transistor BD675 BD677 BD675 BD 677 DATASHEET BD675-D npn darlington transistor 150 watts BD675A BD676

    TO-225AA

    Abstract: BD676 BD678 equivalent BD682 BD680 darlington bd Power Transistors TO-126 Case transistor Bd682 BD675 BD676A
    Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, TO-225AA BD676 BD678 equivalent BD682 BD680 darlington bd Power Transistors TO-126 Case transistor Bd682 BD675 BD676A

    bd681 9 435

    Abstract: BD675 BD675A BD676 BD677 BD677A BD679 BD679A BD68 BD681
    Text: ON Semiconductort BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — • • hFE = 750 Min @ IC


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    PDF BD675 BD675A BD677 BD677A BD679 BD679A BD681* BD675, BD676, r14525 bd681 9 435 BD675 BD675A BD676 BD677 BD677A BD679 BD679A BD68 BD681

    BD676

    Abstract: BD680 BD675 BD676A BD678 BD678A BD680A BD682
    Text: BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc • Monolithic Construction


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    PDF BD676 BD676A BD678 BD678A BD680 BD680A BD682 BD676, BD675, r14525 BD676 BD680 BD675 BD676A BD678 BD678A BD680A BD682

    BD675

    Abstract: BD676 BD676A BD678 BD678A BD680 BD680A BD682
    Text: BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com .for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain – • • • hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682 BD675, BD675 BD676 BD676A BD678 BD678A BD680 BD680A BD682

    tip122 tip127 audio amp schematic

    Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
    Text: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.


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    PDF DL111/D July-2001 r14525 tip122 tip127 audio amp schematic mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


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    PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    BD681

    Abstract: bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD 678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V


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    PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 BD675A BD677A BD679A BD681 BD681 bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR

    Untitled

    Abstract: No abstract text available
    Text: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD677A


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    PDF BD675A/677A/679A/681 BD676A, BD678A, BD677A BD679A BD675A BD681

    BD682

    Abstract: BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A BD679A
    Text: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD 677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage


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    PDF BD676A/678A/680A/682 BD675A, BD677A, BD679A BD681 BD676A BD678A BD680A BD682 BD682 BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A

    D675A

    Abstract: d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE
    Text: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    PDF BD675/D BD675, BD676, O-225AA D675A d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE

    D679A

    Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc


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    PDF BD675, BD676, 7677A BD679 BD681 D679A BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670

    BD876

    Abstract: transistor BD 680 BD878 BD660 BD876A LTA 703 S BD676
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Silicon PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc - 1.5 and 2.0 Adc • Monolithic Construction


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    PDF BD676, BD675, BD676 BD676A BD678 BD678A BD876 transistor BD 680 BD878 BD660 BD876A LTA 703 S

    BD438 equivalent

    Abstract: bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic BD438 356SR BD442
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 P lastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS P N P SILICON CASE 77-08 TO-225AA TYPE


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    PDF BD437 BD441. BD438 BD440 BD442 O-225AA BD438 equivalent bd679 PNP transistor BD878 BD437 equivalent bd442 equivalent Case 77-08 bd676 Circuit Schematic 356SR

    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    bd680

    Abstract: bd678 bd676 bd-678
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.


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    PDF BD676/D BD676 BD676A BD678 BD678A BD680 BD680A BD682 BD676, BD675, bd680 bd678 bd676 bd-678

    Case 77-08

    Abstract: BD678 equivalent BD678 BD676 bd680 transistor BD676A BD682 transistor bd680 BD 139 transistor BD680
    Text: MOTOROLA Order this document by BD676/D SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 P la stic M edium -Pow er S ilico n PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions.


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    PDF BD676/D BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 Case 77-08 BD678 equivalent bd680 transistor transistor bd680 BD 139 transistor

    TRANSISTOR tip122 CHN 949

    Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
    Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.


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    PDF 38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    Je 243

    Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
    Text: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp


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    PDF O-225AA) 2N5655 BD157 2N5656 MJE803# MJE703# 750/18k BD681# BD682# JE210Â Je 243 JE371 je240 JE171 JE340 transistor BD 341 bd189