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    TRANSISTOR BF 180 Search Results

    TRANSISTOR BF 180 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 180 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q62702-F1571

    Abstract: No abstract text available
    Text: BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs 1=B Q62702-F1571 Package 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol


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    500MHz Q62702-F1571 OT-323 Nov-28-1996 100MHz Q62702-F1571 PDF

    VSO05561

    Abstract: No abstract text available
    Text: BF 799W NPN Silicon RF Transistor 3  For linear broadband amplifier application up to 500 MHz  SAW filter driver in TV tuners 2 1 Type Marking BF 799W LKs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit


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    VSO05561 OT-323 Oct-26-1999 100MHz EHT07116 EHT07117 VSO05561 PDF

    transistor Bf 981

    Abstract: transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor BF775 transistor marking zg bf 695
    Text: BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features D High power gain D Low noise figure D High transition frequency


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    BF775 D-74025 transistor Bf 981 transistor BF 257 Transistor 0235 BF bf 671 transistor BF 236 transistor bf 324 BF 273 transistor transistor marking zg bf 695 PDF

    BF199

    Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
    Text: 00-07-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-048-21 BF 199 trans DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor


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    M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199 PDF

    2SA1404

    Abstract: TRANSISTOR 2f 2SA140
    Text: 2SA1404 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 10.2f A ISC 20.0f A BF 140.0 NC 1.80 NF 0.98 RB 180.0m ohm VAF 15.0 V IRB 1.00 A IKF 160.0m A RBM 180.0m ohm ISE 30.0f A RE 40.0m ohm NE 1.36


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    2SA1404 27deg 2SA1404 TRANSISTOR 2f 2SA140 PDF

    2sa1538 spice

    Abstract: 2Sa1538 TRANSISTOR 2f
    Text: 2SA1538 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 10.2f A ISC 20.0f A BF 140.0 NC 1.80 NF 0.98 RB 180.0m ohm VAF 15.0 V IRB 1.00 A IKF 160.0m A RBM 180.0m ohm ISE 30.0f A RE 40.0m ohm NE 1.36


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    2SA1538 27deg 2sa1538 spice 2Sa1538 TRANSISTOR 2f PDF

    2sc3953 spice

    Abstract: 2SC3953 BF-960 spice model 2SC3953-SPICE spice 2sc3953 transistor model
    Text: 2SC3953 SPICE PARAMETER NPN SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit IS 5.80f A ISC 10.0f A BF 96.0 NC 1.50 NF 0.98 RB 360.0m ohm VAF 23.0 V IRB 1.00 A IKF 190.0m A RBM 80.0m ohm ISE 70.0f A RE 60.0m ohm NE 1.50


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    2SC3953 27deg 2sc3953 spice 2SC3953 BF-960 spice model 2SC3953-SPICE spice 2sc3953 transistor model PDF

    BF-960 spice model

    Abstract: 2SC3598 spice SPICE PARAMETER 2SC3598 2SC3598-SPICE 3600m
    Text: 2SC3598 SPICE PARAMETER NPN SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Parameter Value Unit Parameter Value Unit A ISC 10.0f A IS 5.80f BF 96.0 NC 1.50 NF 0.98 RB 360.0m ohm VAF 23.0 V IRB 1.00 A IKF 190.0m A RBM 80.0m ohm ISE 70.0f A RE 60.0m ohm NE 1.50


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    2SC3598 27deg BF-960 spice model 2SC3598 spice SPICE PARAMETER 2SC3598 2SC3598-SPICE 3600m PDF

    la brushless driver

    Abstract: TA8493AF 2SJ465 TA8493BF TA8493F VC2019
    Text: TA8493F/AF/BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF 3-Phase Full Wave Brushless DC Motor Driver IC for CD-ROM Drives These 3-phase, full-wave, brushless DC motor driver ICs have been developed for use in CD-ROM drive spindle motors. The


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    TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465 la brushless driver TA8493AF TA8493BF TA8493F VC2019 PDF

    Untitled

    Abstract: No abstract text available
    Text: TA8493F/AF/BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF 3-Phase Full Wave Brushless DC Motor Driver IC for CD-ROM Drives These 3-phase, full-wave, brushless DC motor driver ICs have been developed for use in CD-ROM drive spindle motors. The


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    TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465 PDF

    ta8493af

    Abstract: LB-29
    Text: TA8493F/AF/BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF 3-Phase Full Wave Brushless DC Motor Driver IC for CD-ROM Drives These 3-phase, full-wave, brushless DC motor driver ICs have been developed for use in CD-ROM drive spindle motors. The


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    TA8493F/AF/BF TA8493F, TA8493AF, TA8493BF TA8493F/ 2SJ465 ta8493af LB-29 PDF

    BF180

    Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
    Text: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti­


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    BF180 BF180 s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs Q62702-F1571 1=B Package 2 =E 3 =C SOT-323 Maximum Ratings


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    500MHz Q62702-F1571 OT-323 0535bG5 235fc 1217EC 100MHz PDF

    40X40

    Abstract: MJEC350
    Text: ÍJhN BF MJEC350 CHIP MEDIUM POWER PNP 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR PNP SILICON 300 V O L T S .designed for use in line-operated applications such as low power line-operated series pass and switching regulators requiring PNP capability.


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    MJEC350 VEB-30Vdc. lc-01 40X40 PDF

    Untitled

    Abstract: No abstract text available
    Text: Te m ic BF 775 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to 2GHz especially for wide band antenna amplifier mixers and oscillators in TV-sat-tuners. Features • • • High power gain Low noise figure High transition frequency


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    BF775 SyS22 BF775 PDF

    BSX51

    Abstract: Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682
    Text: NPN SILICON TRANSISTOR, EPITAXIAL PLANAR BSX 52; a ; B TRANSISTOR NPN S ILIC IU M , PLAN A R E P IT A X IA L Compì, of BSW 21, A and BSW 22, A • LF amplification A m plification BF BSX 51, 52 BSX 51 A, 52 A BSX 51 B, 52 B 25 V - Low current switching Commutation faible courant


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    h80-540 O-181 BSX51 Transistor BSX 32 Transistor BSX 51 H8054 bsx52 bsw21 52B15 de 001 TRANSISTOR 9mc0 4682 PDF

    zq 405-MF

    Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
    Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    23b320 BFP193 62702-F OT-143 zq 405-MF siemens 30 090 GP 819 SAA 1006 saa 1070 PDF

    bsw21

    Abstract: BSW 32 BSW22A bsw 22 BSW-22 transistor bf 175
    Text: PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R BSW 22 , A TRANSISTOR PNP SILIC IU M , PLA N A R E P IT A X IA L Compì, o f BSX 51. A and BSX 52, A - LF amplification A m plification BF • i —2 5 V BSW 21, BSW 22 Low current switching V CEO


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    -10mA bsw21 BSW 32 BSW22A bsw 22 BSW-22 transistor bf 175 PDF

    transistor bf 184

    Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
    Text: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958


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    5109B O-92a transistor bf 184 pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451 PDF

    transistor bf 254

    Abstract: bf255 bf254 BF255C transistor BF 255 transistor NPN BF255 transistor marking ra
    Text: Ö1C D TELEFUNKEN ELECTRONIC • fl^OOSb 0005163 M T * -J /-* / BF 254 • BF 255 ‘¡TilLilFyMDSliMl electronic Creative Technologies Silicon NPN Epitaxial Planar Transistors Applications: BF 254: General and controlled RF amplifier stages up to 100 MHz


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    569-GS transistor bf 254 bf255 bf254 BF255C transistor BF 255 transistor NPN BF255 transistor marking ra PDF

    BF963

    Abstract: transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104
    Text: TELEFUNKEN ELECTRONIC Û1C D • OOOSEMb 2 7^ -5 / BF 963 m f f l R M S I M electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mixerstages especially for PM- and VHF TV-tuners up to 300 MHz


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    IAL66 569-GS BF963 transistor bf 963 ALG TRANSISTOR ALG Transistor MARKING 2SC104 PDF

    transistor Bf 966

    Abstract: LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET
    Text: TELEFUNKEN ELECTRONIC ¥ ilL ilF O *lK l electronic 61C D • S^Dmb '7 s 3 / - 2 - S T ' 00052b2 0 BIAL66 BF 9 6 6 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


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    00052b2 IAL66 ft-11 569-GS 000s154 hal66 if-11 transistor Bf 966 LM 3558 transistor k 3562 B1412-1 G28 marking code sot 23 BF966 mosfet bf 966 G28 SOT-23 transistor G28 k 3561 MOSFET PDF

    BF964

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:


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    569-GS BF964 PDF

    transistor k 3562

    Abstract: transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF
    Text: TELEFUNKEN ELECTRONIC ¥ilLilFO*lKl electronic 61C D • S^Dmb '7s 3 / -2 - S T ' 00052b2 0 BIAL66 BF 966 Creative Technologies { i N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications; Input- and Mixerstages especially for UHF-tuners


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    00052b2 IAL66 ft-11 569-GS 000S154 HAL66 if-11 transistor k 3562 transistor Bf 966 mosfet bf 966 BF966 LM 3558 G28 marking code sot 23 B1412-1 transistor G28 G28 SOT-23 SOT-23 marking BF PDF