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    TRANSISTOR BF 208 Search Results

    TRANSISTOR BF 208 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BF 208 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFG425W

    Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
    Text: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power


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    BFG425W BFG21W BFG21W 603508/01/pp12 amplifier 2606 BFG425 STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS PDF

    transistor bf 185

    Abstract: BF185 bf 185 BF 185 transistor coe br
    Text: BF 185 w Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar R F Transistor Anwendungen: Allgem ein und HF-Verstärkerstufen bis 100 MHz General and RF am plifier stages up to 100 MHz Applications: Besondere Merkmale: • Rauschmaß 4 dB


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    TRANSISTOR BC 208

    Abstract: transistor Bu 208 BU208A TRANSISTOR BC 208 B
    Text: TELEFUNKEN ELECTRONIC 17E T> m fl'teQtHb 000^455 IAL66 BU 208 A •¡nyHPtUJMKIMelectronic CfMtiv*Tfcchnotogw T - 33 -0} Silicon IMPN Power Transistor Applications; Horizontal deflection circuits in colour TV-receivers Features: • High reverse.voltage • Power dissipation 12.5 W


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    IAL66 15A3DIN TRANSISTOR BC 208 transistor Bu 208 BU208A TRANSISTOR BC 208 B PDF

    TRANSISTOR BC 208

    Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
    Text: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers


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    r-33-07 T0126 15A3DIN TRANSISTOR BC 208 transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U PDF

    TRANSISTOR BC 208

    Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
    Text: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode


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    r-33-c? TRANSISTOR BC 208 bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517 PDF

    Untitled

    Abstract: No abstract text available
    Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min min VCE ICM PTA ICBO VCE sat mA Volts mA mW max max 1C min/max typ Cob


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    S3fl33T4 lo-32 PDF

    TRANSISTOR BFW 11

    Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    O-237 TRANSISTOR BFW 11 BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor PDF

    bfw10 transistor

    Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
    Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec


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    O-237 bfw10 transistor pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor PDF

    transistor BC 575

    Abstract: BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90
    Text: T E L E F U N K E N E L E C T R O N IC m D fllC fl'îSO Q 'îb 000533 b 3 BFY 90 Ml e l e c t r o n i c Creative Technologies Silicon NPN Epitaxial Planar R F Transistor Applications: General up to GHz range Features: • Power gain 8 dB 800 MHz • Noise figure < 5 dB


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    569-GS transistor BC 575 BC 194 TRANSISTORS transistor bf 196 transistor bf 194 b BF 194 transistor transistor bf 195 77 ic marking code BF 194 npn transistor 6520* transistor BFY90 PDF

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    CF-121

    Abstract: ALG TRANSISTOR ALG Transistor MARKING 50B4DIN41867
    Text: TELEFUNKEN ELECTRONIC fltUKFOilKlKtlKl electronic Û1C D • ê'iSOO'Jb DODSBH'J 1 7~ S / ~ 2 ^ ~ C F 121 Creative Technologies N-Channel-GaAs-M ESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration;


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    50B4DIN41867 569-GS CF-121 ALG TRANSISTOR ALG Transistor MARKING PDF

    PL504

    Abstract: diode rectifier tv line transformer KT 806 selen rectifier tv signal booster transistor AE pl 504 PY500A selen diode
    Text: Line transformers For colour TV picture tubes Inline tubes 20 AX Type ZT 2080 Remarks: For picture tubes with diagonal deflection angle 110° Characteristics Active components H orizontal B ooster output stage diod e Transistor Si-D iode Rectifier or HVm ultiplier


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    AEF1080 VL14M PL504 diode rectifier tv line transformer KT 806 selen rectifier tv signal booster transistor AE pl 504 PY500A selen diode PDF

    transistor BUX 48

    Abstract: transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking
    Text: TELEFUNKEN ELECTRONIC ôHEOD'ib 000=1507 4 m k L G G 17E D BUX 48 • BUX 48 A inflLIMMI ! electronic CrMiiv«'fchno>og*» • Silicon NPN Power Transistors T " 3 3 " /S ' Applications: Switching mode power supply, inverters, motor control and relay driver


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    15A3DIN E--07 transistor BUX 48 transistor BU 2727 transistor bc 207 npn bux48 BUx4 BUX 208 bc 206 transistor W301 transistor BUX BUX code marking PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    APC UPS CIRCUIT DIAGRAM rs 1500

    Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
    Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO


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    AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 PDF

    RCA 2N3055 transistor

    Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
    Text: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A


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    2N2102] L2N4036J 2N1482 2N5321 2N5323 2N6179 2N6181 2N3054 2N5955 2N5497 RCA 2N3055 transistor 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor PDF

    RCA 431 transistor

    Abstract: 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca RCA 40852 rca 2n3055 transistor RCA 41013 transistor BF 257 2N5416 RCA
    Text: APPLICATION INFORMATION. . . Power Types [N-P-N & P-N-P] for Inverter/Switching Regulator Service Frequency Range 60 Hz to 50 kHz Peak Voltage Required Up to 0.2 A 0.2 to 1 A 10 to 60V 2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 60 to 150V 2N1486 2N2102 2N4036


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    2N3053 2N4037 2N5321 2N5323 2N6179 2N6181 2N3054 2N5497A 2N3055 2N3772 RCA 431 transistor 2N3442 RCA RCA 2N3055 transistor 2N3055 RCA 2n3773 rca RCA 40852 rca 2n3055 transistor RCA 41013 transistor BF 257 2N5416 RCA PDF

    zener Diode B21

    Abstract: No abstract text available
    Text: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching o f L load motor unit:mm drivers, printer hammer drivers, relay drivers . 2084B Features


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    ENN3880A 2SC4737 2084B zener Diode B21 PDF

    2N3055 RCA

    Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A


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    lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N3055 RCA RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410 PDF

    RCA transistor 40410

    Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


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    lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 PDF

    RCA 40411 transistor

    Abstract: audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 MHz . . . Ir to 60 A . . . P r to 140 W ic • 1 A HIM. P f ■ 5 W max. TO-39 * le * - 1 A MX. P j « 7 W max. (T O - » ) • ic ■ 2 A max. P j “ 10 f t max. (TO-39) ft 30 x 30* 30x30 2N2102 (N-P-N]


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    ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40411 transistor audio amplifier with rca 40411 transistor RCA 383 rca 40411 40411 transistor RCA Power Transistor 40411 RCA 40250 RCA 40250 transistor Transistor rca 40250 RCA transistor 40411 PDF

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


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    AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175 PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    Marking ANs

    Abstract: Transistor C 5198 b 514 transistor BFP450
    Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability


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    Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450 PDF