BF370
Abstract: 2108 npn transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF370 NPN medium frequency transistor Product specification Supersedes data of 1997 Jul 11 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF370 FEATURES PINNING
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M3D186
BF370
MAM370
SCA63
115002/00/03/pp8
BF370
2108 npn transistor
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BF370
Abstract: SC-43A transistor BF370 transistor NPN BF370
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF370 NPN medium frequency transistor Product specification Supersedes data of 1999 Apr 21 2004 Nov 08 Philips Semiconductors Product specification NPN medium frequency transistor BF370 FEATURES PINNING
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M3D186
BF370
MAM370
SC-43A
SCA76
R75/04/pp6
BF370
SC-43A
transistor BF370
transistor NPN BF370
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BF370R
Abstract: No abstract text available
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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BF370R
C-120
BF370R
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BF370R
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage
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BF370R
C-120
BF370R
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BF370
Abstract: SC-43A
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BF370 NPN medium frequency transistor Product data sheet Supersedes data of 1999 Apr 21 2004 Nov 08 NXP Semiconductors Product data sheet NPN medium frequency transistor BF370 FEATURES PINNING • Low current max. 100 mA
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M3D186
BF370
MAM370
SC-43A
R75/04/pp6
BF370
SC-43A
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BF370R
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D NPN SILICON PLANAR TRANSISTOR BF370R TO-92 BEC Low Level Amplifier Transistor. ABSOLUTE MAXIMUM RATINGS DESCRIPTION VALUE VCBO 40 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 4.5 Emitter Base Voltage IC
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BF370R
100uA,
BF370R
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF370 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. COLLECTOR 0.5 W (Tamb=25℃) 2. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 40 V
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BF370
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BF370 TRANSISTOR NPN 1.COLLECTOR FEATURES z Low Saturation Medium Current Application z High Transition Frequency 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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BF370
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BF370 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range
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BF370
100MHz
270TYP
050TYP
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BF370
Abstract: No abstract text available
Text: BF370 BF370 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. COLLECTOR 0.5 W (Tamb=25℃) 2. BASE Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃
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BF370
100MHz
BF370
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993 395 pnp npn
Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10
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BRY61
BRY62
OT143B
993 395 pnp npn
bc237 smd sot23 package
transistor TO-92 bc108
TRANSISTOR BC337 SMD
702 TRANSISTOR smd SOT23
2PB601AQ
BC548 TRANSISTOR SMD
bc548 TO-92
Bd135 smd
2PC945Q
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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RD91EB
Q2N4401
D1N3940
Q2N2907A
D1N1190
Q2SC1815
Q2N3055
Q2N1132
D1N750
D02CZ10
D1N751
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Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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sc74750
Abstract: MSE-200 PESD5VOL4UW KMZ52 kmz51 smd transistor BC557 PBLS1504V 2n5551 smd PMBS3904, PMSS3904 sc7921
Text: Discretes For Bipolar Transistors and Discrete MOSFETs please check the Power Management Chapter, pages 189-239. For RF Consumer Products please find following tables in the RF Products Chapter from page 252 onwards: RF PIN diodes RF Bandswitch diodes RF Varicap diodes
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OT346
SC-59)
sc74750
MSE-200
PESD5VOL4UW
KMZ52
kmz51
smd transistor BC557
PBLS1504V
2n5551 smd
PMBS3904, PMSS3904
sc7921
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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BF370
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ME » • bbS3«i31 0027bôü TOO H A P X oro/u J L SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended fo r use in large-signal handling i.f. pre
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bbS3T31
0D27bÃ
BF370
0Q27bfl3
BF370
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bf370
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D I I bbS3^31 DD27b8D TOO APX o ro /u SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope, intended for use in large-signal handling i.f. pre amplifiers of TV receivers in combination with surface acoustic wave filters.
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DD27b8D
BF370
bf370
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BF370
Abstract: ai 972
Text: DISCRETE SEMICONDUCTORS 1999 Apr 21 Product specification Supersedes data of 1997 Jul 11 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN medium frequency transistor BF370 PINNING FEATURES • Low current max. 100 mA
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BF370
SCA63
5002/00/03/pp8
BF370
ai 972
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BF370
Abstract: BF370R transistor BF370
Text: BF370 BF370R SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tran sisto r in a plastic TO -92 package, intended fo r use in large-signal handling i.f. p re a m p lifie rs o f T V receivers in co m b in a tio n w ith surface acoustic wave filte rs. Q U IC K R EFE R E N C E D A T A
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BF370
BF370R
BF370R
transistor BF370
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TRANSISTOR BC 448 smd
Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors
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BRY61
BRY62
OT143B
TRANSISTOR BC 448 smd
JA101P
smd transistor npn 491
transistor TO-92 bc108
transistor pn2222
BC853B
transistor MPSA77
jc5010 215
BC307 smd
2PB601A
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BF370
Abstract: transistor BF370
Text: Philips Semiconductors Product specification NPN medium frequency transistors FEATURES BF370; BF370R PINNING • Low current max. 100 mA PIN • Low voltage (max. 15 V). DESCRIPTION PIN BF370 APPLICATIONS • IF pre-amplifiers of television receivers. DESCRIPTION
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BF370;
BF370R
BF370
BF370
transistor BF370
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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