TRANSISTOR BFR 37 Search Results

TRANSISTOR BFR 37 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BFR 37 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage	Original	PDF	MBT2222ADW1T1G MBT2222ADW1T1/D
Transistor BFR 97 Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98 Text: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking	Original	PDF	Q62702-F1051 OT-23 Transistor BFR 97 Transistor BFR 37 Q62702-F1051 Transistor BFR 98
Transistor BFR 90 application Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811 Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50	Original	PDF	BFR90A D-74025 Transistor BFR 90 application Transistor BFR 35 Transistor BFR 90 693 071 010 811
BFR 970 Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559 Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50	Original	PDF	BFR96TS D-74025 BFR 970 Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Untitled Abstract: No abstract text available Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and	Original	PDF	540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3
3BR0665JF Abstract: 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1 Text: Evaluation boards for Automotive, Industrial and Multimarket Applications 2010 [ www.infineon.com/evalkits ] Contents Automotive 05 Motor control 11 Industrial control & automation 15 Power management 19 Lighting & LED 22 Consumer 25 Communication 30 Microcontroller	Original	PDF	TC1797, TC1197 TC1797 XC866, XC886, XC888 XC800 XC164CM XE164 B192-H9214-G2-X-7600 3BR0665JF 2qs02g BTN7970B ICB1FL02G ICE2qs01 equivalent stepper+434 3br0665 TLE8209-1
S4 78a DIODE schottky Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92 Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	25-RF-BIPOLAR-Transistors. 45-RF-BIPOLAR-Transistors. OT-23 OT-143 S4 78a DIODE schottky diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
2907A PNP bipolar transistors Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT Text: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2	Original	PDF	OT-23 OT-143 2907A PNP bipolar transistors diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
2907A PNP bipolar transistors Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original	PDF	O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
FN 1016 Abstract: MPA 67 MPA1064DH BFR32 B1582 transistor fn 1016 DL201 MPA1016DD MPA1036HI 269 SL3.0/transistor fn 1016 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA1000 Product Description Motorola Programmable Array MPA products are a high density, high performance, low cost, solution for your reconfigurable logic needs. When used with our automatic high performance design tools, MPA delivers custom logic	Original	PDF	MPA1000 MPA1016 MPA1036 DL201 FN 1016 MPA 67 MPA1064DH BFR32 B1582 transistor fn 1016 MPA1016DD MPA1036HI 269 SL3.0/transistor fn 1016
k1377 Abstract: MPA1064DH B1582 M20214 MPA1064KE MPA1016DD MPA1016FN MPA1000 MPA1036DH MPA1036FN Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPA1000 Product Description future design migration efforts. The combination of automatic tools and gate level architecture is ideal for traditional schematic driven or high level language based design methodologies. In fact, logic synthesis tools were originally	Original	PDF	MPA1000 RS232 33MHz X11r5 DL201 k1377 MPA1064DH B1582 M20214 MPA1064KE MPA1016DD MPA1016FN MPA1036DH MPA1036FN
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Transistor BFR 97 Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79 Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package	OCR Scan	PDF	fl23SbOS Q0QMb74 2N6619, 023SbOS 00G4b77 BFR35A 2N6619 Transistor BFR 97 Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
ABE 422 Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721 Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high	OCR Scan	PDF	pac54 23Sb05 BFR14B ABE 422 Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721

BFR16 Abstract: Transistor BFr 99 Text: SILICON PLANAR NPN BFR16 LO W -LE V EL, LOW-NOISE HIGH G AIN A M P LIFIE R The BFR 16 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal-case designed for use in high performance, low-level, low-noise amplifier applications. ABSOLUTE M A X IM U M RATINGS	OCR Scan	PDF	BFR16 BFR16 Transistor BFr 99
lge 673 Abstract: TRANSISTOR cq 802 Text: BEE D • 053b3E0 □017Q3C] 0 H S I P NPN N Silicon RF Transistor SIEMENS/ SPCL-. SEMICONDS ^ ^ BFR 193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • fr = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802
Untitled Abstract: No abstract text available Text: 3SE D • flS3t.33Q 0 0 1 7 0 1 ^ S m S I P NPN Silicon RF Transistor T "2 l-f 7 _ SIE M E N S / SPCL-. SEMICONDS _ BFR • For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 to 30 mA. S CECC-type available: CECC 50002/256.	OCR Scan	PDF	BFR93A OT-23
transistor BD 540 Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108 Text: 6 0 9 y e a MICRO ELECTRONICS CORF D E \| b [ m 7 f i a DOGObS? D \| 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches	OCR Scan	PDF	609yea BCW94 O-92F BCW96 BCW95 BCW97 BCW94 transistor BD 540 Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Untitled Abstract: No abstract text available Text: 32E D m Ô23b320 OGlb^flS S WÊ SIP NPN Silicon RF Transistor SIEMENS/ SP C Li SEMICONDS BFR35AP _ • For broadband amplifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	23b320 BFR35AP 62702-F OT-23 T-31-17
BFR92P Abstract: No abstract text available Text: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254.	OCR Scan	PDF	0G17GQ2 BFR92P OT-23 BFR92P
FET BFW 43 Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257 Text: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M- t- o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—	OCR Scan	PDF	0000b7D O-106 O-92F O-92A to-02 melf-002. melf-006 to-237 FET BFW 43 MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan	PDF
case 317-01 Abstract: MRF2369 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro	OCR Scan	PDF	17A-01 05A-01 MRF536* MRF2369 MRF571 44A-01, 2N5947 MRF511 2N6603 MRF962 case 317-01 RF Transistor Selection transistor MRF536 MRF931 MRF536 MRF911 transistor bfr96 2N5109 motorola MRF587
2n5835 Abstract: 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF502 MRF965 low noise transistor cross motorola 2N3866 2n5160 Text: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro	OCR Scan	PDF	17A-01 05A-01 Gain-200 MRF502 BFX89 BFY90 2N5179 2N2857 MRF904 MRF914 2n5835 2n4957 mrf502 transistor MRF542 rf power package selection guide MRF965 low noise transistor cross motorola 2N3866 2n5160

TRANSISTOR BFR 37 Search Results

TRANSISTOR BFR 37 Result Highlights (5)

TRANSISTOR BFR 37 Datasheets Context Search

Untitled

Transistor BFR 97

Transistor BFR 90 application

BFR 970

Untitled

3BR0665JF

S4 78a DIODE schottky

2907A PNP bipolar transistors

2907A PNP bipolar transistors

FN 1016

k1377

BCM 4336

Transistor BFR 97

ABE 422

BFR16

lge 673

Untitled

transistor BD 540

Untitled

BFR92P

FET BFW 43

HBF4727A

case 317-01

2n5835