TRANSISTOR BFR 96 Search Results

TRANSISTOR BFR 96 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BFR 96 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Transistor BFR 96 Abstract: Bfr 910 BFR96T TRANSISTOR BFR 642 telefunken BFR 34 A Text: BFR 96 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96T Marking Plastic case XTO 50	Original	BFR96T D-74025 Transistor BFR 96 Bfr 910 TRANSISTOR BFR 642 telefunken BFR 34 A	PDF
BFR 970 Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559 Text: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50	Original	BFR96TS D-74025 BFR 970 Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559	PDF
m6c marking code Abstract: MMBFU310LT1G M6C sot-23 Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage	Original	MMBFU310LT1G OT-23 O-236AB) MMBFU310LT1/D m6c marking code MMBFU310LT1G M6C sot-23	PDF
Q62702-F1491 Abstract: GMA marking 175fF Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	Original	900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF	PDF
MMBFJ310LT1G Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310 Text: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage	Original	MMBFJ309LT1G, MMBFJ310LT1G OT-23 O-236) MMBFJ309LT1/D MMBFJ310LT1G MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310	PDF
Q62702-F1314 Abstract: No abstract text available Text: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	Original	900MHz OT-23 Q62702-F1314 Dec-11-1996 Q62702-F1314	PDF
MMBFU310LT1G Abstract: MMBFU310 Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage	Original	MMBFU310LT1G OT-23 O-236AB) MMBFU310LT1/D MMBFU310LT1G MMBFU310	PDF
Untitled Abstract: No abstract text available Text: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage	Original	MMBFU310LT1G 236AB) MMBFU310LT1/D	PDF
BFR 965 Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705 Text: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!	Original	Q62702-F1315 OT-23 BFR 965 BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705	PDF
BFR91 Abstract: Transistor BFR 90 application transistor BFR91 Text: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50	Original	BFR91 D-74025 Transistor BFR 90 application transistor BFR91	PDF
Transistor BFR 90 application Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811 Text: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50	Original	BFR90A D-74025 Transistor BFR 90 application Transistor BFR 35 Transistor BFR 90 693 071 010 811	PDF
BFR90 Abstract: BFR 90 Text: BFR 90 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90 Marking Plastic case XTO 50	Original	BFR90 D-74025 BFR 90	PDF
VSO05561 Abstract: Transistor BFR 181w Text: BFR 181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	VSO05561 OT-323 900MHz Oct-13-1999 VSO05561 Transistor BFR 181w	PDF
p 181 V Abstract: No abstract text available Text: BFR 181 NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type	Original	VPS05161 OT-23 -65meter, 900MHz Oct-13-1999 p 181 V	PDF

Untitled Abstract: No abstract text available Text: Temic BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F-am plifier up to G H z range specially for w ide band antenna am plifier. Features • H igh pow er gain • L ow noise figure • High transition frequency BFR 90A M arking: BFR 90A	OCR Scan	BFR90A ar-97	PDF
bfr96s Abstract: No abstract text available Text: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	Q68000-A5689 bfr96s	PDF
TRANSISTOR BC 136 Abstract: TRANSISTOR SOT-23 marking JE Text: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain	OCR Scan	JEDECTO50 569-GS TRANSISTOR BC 136 TRANSISTOR SOT-23 marking JE	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration	OCR Scan	900MHz Q62702-F1491 OT-323 fl235bGS D1220Ã	PDF
Transistor BFR 96 Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237 Text: TELEFUNKEN ELECTRONIC file D • fiSSOO^b 0 0 0 5 3 0 3 T BFR 96 S electronic Creative Technologies Silicon NPN Planar RF Transistor Applications; RF-amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain • Low noise figures	OCR Scan	ft-11 569-GS 000s154 hal66 if-11 Transistor BFR 96 TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	OCR Scan	900MHz Q62702-F1314 OT-23 Junctio30 Q122DÃ BFR181 IS21I2 E35bD5	PDF
Transistor BFR 181w Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345 Text: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code	OCR Scan	900MHz Q62702-F1491 OT-323 Transistor BFR 181w GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345	PDF
Transistor BFR Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67 Text: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code	OCR Scan	OT-23 Transistor BFR Transistor BFR 191 Transistor BFR 39 BFR 67	PDF
CD 1691 CB Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559 Text: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking	OCR Scan	F1218 OT-23 CD 1691 CB CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559	PDF
Transistor BFR 191 Abstract: bfr 49 transistor transistor eb 2030 Text: BFR 92P NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non-saturated sw itches at co lle cto r currents from 0.5 to 20 mA. C E C EC C -type available: CECC 50002/254. ESD: E lectrostatic discharge sensitive device, observe handling precautions!	OCR Scan	OT-23 Transistor BFR 191 bfr 49 transistor transistor eb 2030	PDF

TRANSISTOR BFR 96 Search Results

TRANSISTOR BFR 96 Result Highlights (5)

TRANSISTOR BFR 96 Datasheets Context Search

Transistor BFR 96

BFR 970

m6c marking code

Q62702-F1491

MMBFJ310LT1G

Q62702-F1314

MMBFU310LT1G

Untitled

BFR 965

BFR91

Transistor BFR 90 application

BFR90

VSO05561

p 181 V

Untitled

bfr96s

TRANSISTOR BC 136

Untitled

Transistor BFR 96

Untitled

Transistor BFR 181w

Transistor BFR

CD 1691 CB

Transistor BFR 191