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    TRANSISTOR BGS Search Results

    TRANSISTOR BGS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BGS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.


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    PMD18D100 100APEAK PMD18D100 100mA 300us, PDF

    AN569

    Abstract: 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications
    Text: Order this data sheet by MTG15P10/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Des/gnerfs Data Sheet MTG15PI0 Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, regulahigh speed power switching applications such as switching


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    MTG15P10/D MTG15PI0 MTH20PI AN104O. AN569 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications PDF

    BCW61

    Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    BCW61, BCX71 BCW60, BCX70 120Hz 61/BCX EHP00356 EHP00357 10kHz BCW61 BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF PDF

    BCX 71G E6327

    Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 BCX 71G E6327 BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23 PDF

    BCX71

    Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    BCW61, BCX71 BCW60, BCX70 71KRS 120Hz 61/BCX EHP00356 EHP00357 BCX71 marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN PDF

    Untitled

    Abstract: No abstract text available
    Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and


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    540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3 PDF

    bcx71

    Abstract: No abstract text available
    Text: BCW61, BCX71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration


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    BCW61, BCX71 BCW60, BCX70 VPS05161 Apr-12-2002 bcx71 PDF

    BCW61FF

    Abstract: BCs sot23
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking


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    OT-23 120Hz BCW61FF BCs sot23 PDF

    71 SOT-23

    Abstract: No abstract text available
    Text: BCW 61, BCX 71 PNP Silicon AF Transistor  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration


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    OT-23 61/BCX 71 SOT-23 PDF

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


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    2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568 PDF

    2f5 transistor

    Abstract: No abstract text available
    Text: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable


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    PDF

    RT1N234X

    Abstract: RT1P234C RT1P234M RT1P234T2 RT1P234U RT1P234X
    Text: T r a n s is to r RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P234X is a OUTLINE one chip transistor RT1P234U with built-in bias resistor.NPN type Is RT1N234X UNIT mm DRAWING R T1P 234C 23


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    RT1P234X HT1P234X RT1N234X RT1P234T2 RT1P234U RT1P234M RT1P234C SC-53 O-236 RT1N234X RT1P234C RT1P234M RT1P234T2 RT1P234U PDF

    transistor SG 14

    Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
    Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the


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    TGF2021-04-SG 20MHz TGF2021-04-SG TGF2021-04-SG. transistor SG 14 pHEMT transistor tgf2021 TGF2021-04 4GHZ TRANSISTOR PDF

    sg transistor

    Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
    Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage


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    TGF2021-08-SG 20MHz TGF2021-08-SG TGF2021-08-SG. sg transistor rf transistor 320C TGF2021 4ghz transistor n "rf transistor" PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 PDF

    K 2645 transistor

    Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
    Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W


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    0QEH503 IAL66 T-33-13 DIN41 T0126 15A3DIN K 2645 transistor K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645 PDF

    TRANSISTOR MARKING CODE R2A

    Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1
    Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage


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    DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1 PDF

    sot-23 3341

    Abstract: transistor bu 126
    Text: TELEFUNKEN ELECTRONIC 17E D • a^SQD^b GOD^MMB 5 • ▼ e le c tro n ic CrwttrtTfcchnotogiw' BU 1 26 T - 3 3 - lf Silicon NPN Power Transistor Applications: Voltage regulator, inverter, switching mode power supply Features: • InTripple Diffusion Mesa Technique


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    15A3DIN sot-23 3341 transistor bu 126 PDF

    diode B14A

    Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
    Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)


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    00CHb51 000Rb52 T0126 15A3DIN diode B14A B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070 PDF

    transistor 1p3

    Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
    Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S


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    23SbGS BFQ19P 62702-F1060 OT-89 D2Hm35 transistor 1p3 MARKING 19S ic MARKING FZ F1060 e23s PDF

    transistor BC 245

    Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time


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    00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126 PDF

    RT1P240T2

    Abstract: RT1P240C 043B RT1N240X RT1P240M RT1P240S RT1P240U RT1P240X
    Text: R T1P240X SERIES Tr, „ J 7" * F u r S w it c h in g A p p lic a tio n Silicon PNP Epitaxial T ype DESCRIPTION RT1P240X is a OUTLINE one chip transistor DRAWING U N IT m m RT1P240U with b u ilt-ir bias resistor.NPN type is RT1N240X R T1P 240C 2fl „ _ 1J5


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    RT1P240X RT1N240X RT1P240T2 RT1P240U RT1P240M RT1P240C O-236 RT1P240T2 RT1P240C 043B RT1N240X RT1P240M RT1P240S RT1P240U PDF

    RT1P431C

    Abstract: RT1P431M RT1P431S RT1P431U RT1P431X
    Text: S e m ic o n d u c t o r T r a n s is to r R T 1 P 4 3 1 X S E R IE S Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DESCRIPTION HT1P431X is a o n e c h ip t r a n s is t o r UNIT mm DRAWING RT1P431U with b u ilt-in bias resistor.NPN type is RT1N431X


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    RT1P431X RT1N431X RT1P431T2 RT1P431U RT1P431M RT1P431C RT1P431C RT1P431M RT1P431S PDF

    Untitled

    Abstract: No abstract text available
    Text: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed


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    T1P2701012-SP 500MHz 10watts 15Watts PDF