Untitled
Abstract: No abstract text available
Text: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package.
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PMD18D100
100APEAK
PMD18D100
100mA
300us,
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AN569
Abstract: 632 transistor motorola MTG15P10 AN569 in Motorola Power Applications
Text: Order this data sheet by MTG15P10/D MOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Des/gnerfs Data Sheet MTG15PI0 Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS These TMOS Power FETs are designed for medium voltage, regulahigh speed power switching applications such as switching
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MTG15P10/D
MTG15PI0
MTH20PI
AN104O.
AN569
632 transistor motorola
MTG15P10
AN569 in Motorola Power Applications
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BCW61
Abstract: BCX71 BCs sot23 marking BJs SOT23 sot23 transistor marking 12E 61FN BJs SOT23 BKs SOT23 BCW60 BCW61FF
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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BCW61,
BCX71
BCW60,
BCX70
120Hz
61/BCX
EHP00356
EHP00357
10kHz
BCW61
BCX71
BCs sot23
marking BJs SOT23
sot23 transistor marking 12E
61FN
BJs SOT23
BKs SOT23
BCW60
BCW61FF
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BCX 71G E6327
Abstract: BKs SOT23 sot23 transistor marking 12E BNS 180 BHS SOT23
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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BCW61,
BCX71
BCW60,
BCX70
VPS05161
Apr-12-2002
BCX 71G E6327
BKs SOT23
sot23 transistor marking 12E
BNS 180
BHS SOT23
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BCX71
Abstract: marking BJs SOT23 BCW60 BCW61 BCW61FF BCX70 61FN
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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BCW61,
BCX71
BCW60,
BCX70
71KRS
120Hz
61/BCX
EHP00356
EHP00357
BCX71
marking BJs SOT23
BCW60
BCW61
BCW61FF
BCX70
61FN
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PDF
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Untitled
Abstract: No abstract text available
Text: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and
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540ESD
540ESD
BFP540ESD
460L3
BFR460L3
434MHz
BFP460
360L3
340L3
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bcx71
Abstract: No abstract text available
Text: BCW61, BCX71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW60, BCX70 NPN 2 1 Type Marking Pin Configuration
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Original
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BCW61,
BCX71
BCW60,
BCX70
VPS05161
Apr-12-2002
bcx71
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PDF
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BCW61FF
Abstract: BCs sot23
Text: BCW 61, BCX 71 PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking
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OT-23
120Hz
BCW61FF
BCs sot23
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PDF
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71 SOT-23
Abstract: No abstract text available
Text: BCW 61, BCX 71 PNP Silicon AF Transistor For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 60, BCX 70 NPN 2 1 Type Marking Pin Configuration
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OT-23
61/BCX
71 SOT-23
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transistor NEC B 617
Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and
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2SC5010
2SC5010
transistor NEC B 617
nec 2035 744
zo 607 p 408
7749 transistor
ic 151 811
transistor 3568
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2f5 transistor
Abstract: No abstract text available
Text: 1 29E D aa3st»as oogmstô 3 SIEG ^ j t - r r BF 967 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF fo r in p u t stag e s up to 9 0 0 M H z BF 967 is a PNP silicon UHF planar transistor with passivateci surface in a low-capacitance plastic package similar to T 0 119 50 B 3 DIN 41867 . The transistor is particularly suitable
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RT1N234X
Abstract: RT1P234C RT1P234M RT1P234T2 RT1P234U RT1P234X
Text: T r a n s is to r RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P234X is a OUTLINE one chip transistor RT1P234U with built-in bias resistor.NPN type Is RT1N234X UNIT mm DRAWING R T1P 234C 23
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RT1P234X
HT1P234X
RT1N234X
RT1P234T2
RT1P234U
RT1P234M
RT1P234C
SC-53
O-236
RT1N234X
RT1P234C
RT1P234M
RT1P234T2
RT1P234U
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transistor SG 14
Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Text: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de fense and commercial markets can take advantage of the
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TGF2021-04-SG
20MHz
TGF2021-04-SG
TGF2021-04-SG.
transistor SG 14
pHEMT transistor
tgf2021
TGF2021-04
4GHZ TRANSISTOR
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sg transistor
Abstract: TGF2021-08-SG rf transistor 320C TGF2021 4ghz transistor n "rf transistor"
Text: TrìQuint SEMICONDUCTOR TGF2021-08-SG 7 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The T riQ uint TG F2021-08-SG is a discrete 7 W a tt P1dB Transistor operating at 12 volts. The device produces 7W P1dB RF output power at 4GHz. Both defense and com m ercial m arkets can take advantage
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TGF2021-08-SG
20MHz
TGF2021-08-SG
TGF2021-08-SG.
sg transistor
rf transistor 320C
TGF2021
4ghz transistor n
"rf transistor"
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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K 2645 transistor
Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
Text: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W
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0QEH503
IAL66
T-33-13
DIN41
T0126
15A3DIN
K 2645 transistor
K 2642 transistor
transistor d 2645
TRANSISTOR K 2645 transistor
TRANSISTOR BC 415
transistor BU 102
TRANSISTOR P 01 K 2645
transistor BF 606
BF 145 transistor
TRANSISTOR K 2645
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TRANSISTOR MARKING CODE R2A
Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor ZS20 TRANSISTOR BC 5 transistor BU 705 transistor 263-1
Text: TELEFUNKEN ELECTRONIC 17E » • lALGfi DOCHM'JB b BU 705 in u m id ì« ! electronic CreativeTtchooieg*« T-33-13 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and white TV-receivers Features: • High reverse voltage
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DIN41
T-33-/S
T0126
15A3DIN
TRANSISTOR MARKING CODE R2A
din 74 F5
TRANSISTOR MARKING 705
transistor 81 110 w 85
transistor BU 109
705 transistor
ZS20
TRANSISTOR BC 5
transistor BU 705
transistor 263-1
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sot-23 3341
Abstract: transistor bu 126
Text: TELEFUNKEN ELECTRONIC 17E D • a^SQD^b GOD^MMB 5 • ▼ e le c tro n ic CrwttrtTfcchnotogiw' BU 1 26 T - 3 3 - lf Silicon NPN Power Transistor Applications: Voltage regulator, inverter, switching mode power supply Features: • InTripple Diffusion Mesa Technique
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15A3DIN
sot-23 3341
transistor bu 126
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Text: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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00CHb51
000Rb52
T0126
15A3DIN
diode B14A
B14A diode
TFK 03 Diode
TFK3070D
TFK 001
B14A
23 TFK 001
TFK u 269
TFK 03
TFK3070
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PDF
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transistor 1p3
Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S
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23SbGS
BFQ19P
62702-F1060
OT-89
D2Hm35
transistor 1p3
MARKING 19S
ic MARKING FZ
F1060
e23s
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PDF
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transistor BC 245
Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time
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00DRS51
flBES100
T0126
15A3DIN
transistor BC 245
transistor BC 245 c
ST25C
transistor bc 138
FC4A
TRANSISTOR BC 137
but54
TELEFUNKEN
12A3
T0126
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PDF
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RT1P240T2
Abstract: RT1P240C 043B RT1N240X RT1P240M RT1P240S RT1P240U RT1P240X
Text: R T1P240X SERIES Tr, „ J 7" * F u r S w it c h in g A p p lic a tio n Silicon PNP Epitaxial T ype DESCRIPTION RT1P240X is a OUTLINE one chip transistor DRAWING U N IT m m RT1P240U with b u ilt-ir bias resistor.NPN type is RT1N240X R T1P 240C 2fl „ _ 1J5
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RT1P240X
RT1N240X
RT1P240T2
RT1P240U
RT1P240M
RT1P240C
O-236
RT1P240T2
RT1P240C
043B
RT1N240X
RT1P240M
RT1P240S
RT1P240U
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PDF
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RT1P431C
Abstract: RT1P431M RT1P431S RT1P431U RT1P431X
Text: S e m ic o n d u c t o r T r a n s is to r R T 1 P 4 3 1 X S E R IE S Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DESCRIPTION HT1P431X is a o n e c h ip t r a n s is t o r UNIT mm DRAWING RT1P431U with b u ilt-in bias resistor.NPN type is RT1N431X
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RT1P431X
RT1N431X
RT1P431T2
RT1P431U
RT1P431M
RT1P431C
RT1P431C
RT1P431M
RT1P431S
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PDF
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Untitled
Abstract: No abstract text available
Text: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed
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T1P2701012-SP
500MHz
10watts
15Watts
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