MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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SUT101N
Abstract: No abstract text available
Text: SUT101N Semiconductor Epitaxial planar PNP/NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. Package : SOT-26 Ordering Information
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SUT101N
500mW
OT-26
KSD-T5P005-000
SUT101N
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
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MJE13007D
Abstract: NPN Transistor 50A 400V 24 pin ic utc rc
Text: UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive circuits where fall time is
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MJE13007D
MJE13007D
MJE13007DL-TA3-T
MJE13007DG-TA3-T
O-220
MJE13007DL-TA3-T
O-220
QW-R203-042
NPN Transistor 50A 400V
24 pin ic utc rc
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •
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FZT651Q
OT223
J-STD-020
300mV
MIL-STD-202,
DS36917
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23
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FMMT491Q
J-STD-020
MIL-STD-202,
DS37009
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Feature
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FMMT459Q
150mA
500mA
625mW
-90mV
120mA
AEC-Q101
DS37019
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2SB649AG
Abstract: 2sb669
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A Lead-free: 2SB649L/2SB649AL Halogen-free: 2SB649G/2SB649AG ORDERING INFORMATION
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2SB649/A
2SB669/A
2SB649L/2SB649AL
2SB649G/2SB649AG
2SB649-x-AB3-R
2SB649-x-T6C-K
2SB649-x-T60-K
2SB649-x-T92-B
2SB649-x-T92-K
2SB649-x-T9N-B
2SB649AG
2sb669
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2SD669Al
Abstract: 2SD669A 2SD669 transistor 2sd669 2SD669-X-AA3-R 2SD669L transistor 160v 1.5a npn 2sd669ag-x-aa3-r 2SD669AG 1.5A NPN power transistor TO-92
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A Lead-free: 2SD669L/2SD669AL Halogen-free: 2SD669G/2SD669AG ORDERING INFORMATION
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2SD669/A
2SB649/A
2SD669L/2SD669AL
2SD669G/2SD669AG
2SD669-x-AA3-R
2SD669-x-AB3-R
2SD669-x-T60-K
2SD669-x-T6C-K
2SD669-x-T92-B
2SD669-x-T92-K
2SD669Al
2SD669A
2SD669
transistor 2sd669
2SD669-X-AA3-R
2SD669L
transistor 160v 1.5a npn
2sd669ag-x-aa3-r
2SD669AG
1.5A NPN power transistor TO-92
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT560Q
-500V
-150mA
500mA
100mA
AEC-Q101
DS37020
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23
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FMMT591Q
J-STD-020
DS37010
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Marking f1 SOT26
Abstract: No abstract text available
Text: SUT101N Epitaxial planar PNP/NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. Package : SOT-26 Ordering Information Type NO.
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SUT101N
500mW
OT-26
KSD-T5P005-001
Marking f1 SOT26
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA0492A CPH5518 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers Features • • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
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ENA0492A
CPH5518
CPH5518
CPH3116
CPH3216,
A0492-8/8
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2SB669
Abstract: 2SB669A 2SB649AL 2SB649 2sb649a
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 *Pb-free plating product number:2SB649/AL ORDERING INFORMATION
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2SB649/A
2SB669/A
O-126
2SB649/AL
2SB649-x-T60-A-K
2SB649L-x-T60-A-K
2SB649A-x-T60-A-K
2SB649AL-x-T60-A-K
O-126
2SB669
2SB669A
2SB649AL
2SB649
2sb649a
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 APPLICATION * Low frequency power amplifier * Complementary pair with UTC 2SB649/A SOT-89 *Pb-free plating product number: 2SD669/AL ORDERING INFORMATION
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2SD669/A
2SB649/A
OT-89
2SD669/AL
2SD669-x-AB3-F-R
2SD669L-x-AB3-F-R
2SD669A-x-AB3-F-R
2SD669AL-x-AB3-F-R
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Untitled
Abstract: No abstract text available
Text: SUT101N Epitaxial planar PNP/NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=500mW Max. Package : SOT-26 Ordering Information Type N O.
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SUT101N
500mW
OT-26
KSD-T5P005-001
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CPH5524
Abstract: No abstract text available
Text: Ordering number : ENA0859A CPH5524 Bipolar Transistor http://onsemi.com – 50V, (–)6A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
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ENA0859A
CPH5524
A0859-8/8
CPH5524
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Untitled
Abstract: No abstract text available
Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound
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BCX5316Q
J-STD-020
MIL-STD-202
-500mV
DS37033
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IB1012S800 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1012S800 is designed for L-Band avionics systems operating at 1025 to 1150 MHz.
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IB1012S800
IB1012S800
IB1012S800-REV-PR1-DS-REV-NC
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD669xG-x-AA3-R
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2SD669/A
2SB649/A
2SD669xG-x-AA3-R
2SD669xG-x-AB3-R
2SD669xG-x-AE3-R
2SD669xG-x-AE3-6-R
2SD669xL-x-T60-K
2SD669xG-x-T60-K
2SD669xL-x-T6C-K
2SD669xG-x-T6C-K
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high
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13002AH
13002AH
13002AHL-TM3-T
13002AHL-T60-F-K
QW-R223-019
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2N4272
Abstract: 5630
Text: 2N4272 BIPOLAR NPN SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) • GENERAL PURPOSE NPN TRANSISTOR 0.41 (0.016) 0.53 (0.021)
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2N4272
O-205AD)
2N4272
5630
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vqe 24 d
Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Text: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D20
vqe 24 d
vqe 24 e
VQE 23 E
vqe 23
vqe 14 E
VQE 21 d
vqe 23 f
vqe 23 c
IGT6E20
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