2N3904
Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
2N3904
LM96163C
LM96163CISD
LM96163CISDX
QFN10
RLs6
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
LM96163
2N3904,
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Untitled
Abstract: No abstract text available
Text: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor
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LM96163
2N3904,
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RTU620
Abstract: No abstract text available
Text: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta
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LM96163
LM96163
SNAS433C
RTU620
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IGBT/MOSFET Gate Drive
Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it
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20-May-09
IGBT/MOSFET Gate Drive
IGBT PNP
power BJT anti saturation diode
Gate Drive Optocoupler
optocoupler drive relay
IGBT gate drive for a boost converter
IGBT gate driver ic
high side MOSFET driver optocoupler
IGBT cross
igbt dc to dc converter capacitor charging
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FMMT634Q
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT634Q
900mA
625mW
FMMT734Q
AEC-Q101
DS37051
FMMT634Q
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FMMT560Q
-500V
-150mA
500mA
100mA
AEC-Q101
DS37020
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23
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FMMT591Q
J-STD-020
DS37010
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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FZT751Q
OT223
-300mV
FZT651Q
AEC-Q101
DS36963
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green FZT651Q 60V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. •
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FZT651Q
OT223
J-STD-020
300mV
MIL-STD-202,
DS36917
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23
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FMMT491Q
J-STD-020
MIL-STD-202,
DS37009
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT459Q 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Feature
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FMMT459Q
150mA
500mA
625mW
-90mV
120mA
AEC-Q101
DS37019
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Untitled
Abstract: No abstract text available
Text: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound
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BCX5316Q
J-STD-020
MIL-STD-202
-500mV
DS37033
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Untitled
Abstract: No abstract text available
Text: MJD32CQ 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features
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MJD32CQ
-100V
MJD31CQ
AEC-Q101
DS37050
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Untitled
Abstract: No abstract text available
Text: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost
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C2173
C2173
OT23-6
DS-5706-1403
03-Mar-2014
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C2171
Abstract: No abstract text available
Text: C2171/2 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost design
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C2171/2
C2171/2PX2
OT23-6
DS-5175-1406
3-Jun-2014
C2171
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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Untitled
Abstract: No abstract text available
Text: BCP5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications
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BCP5616Q
OT223
500mV
BCP5316Q
DS36981
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Untitled
Abstract: No abstract text available
Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •
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BCP5316Q
OT223
-500mV
BCP5616Q
DS36980
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Untitled
Abstract: No abstract text available
Text: LM96163 www.ti.com SNAS433C – JUNE 2008 – REVISED OCTOBER 2011 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES 1 • 2 • • •
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LM96163
SNAS433C
LM96163
2N3904
12-step
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45HEX
Abstract: No abstract text available
Text: LM96163 www.ti.com SNAS433C – JUNE 2008 – REVISED OCTOBER 2011 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES 1 • 2 • • •
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LM96163
SNAS433C
LM96163
2N3904
12-step
45HEX
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NPN transistor 2n3904 beta value
Abstract: bjt 2N3904 2N3904 npn bjt transistor 2n3904 npn fairchild beta MMBT3904FSCT 2N3904 transistor equivalent BJT 2n3904 temp sensor 2n3904 equivalent transistor of 2n3904 TRANSISTORS BJT list
Text: AN 12.14 Remote Thermal Sensing Diode Selection Guide 1 Preface This application note provides guidance to designers of systems that use thermal sensors with remote diodes. A discrete bipolar junction transistor BJT is commonly used as the remote diode. This
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EMC1002.
NPN transistor 2n3904 beta value
bjt 2N3904
2N3904 npn bjt transistor
2n3904 npn fairchild beta
MMBT3904FSCT
2N3904 transistor equivalent
BJT 2n3904 temp sensor
2n3904 equivalent transistor
of 2n3904
TRANSISTORS BJT list
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intel processor transistor count through 2013
Abstract: No abstract text available
Text: LM96163 www.ti.com SNAS433D – JUNE 2008 – REVISED MAY 2013 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES DESCRIPTION • The LM96163 has remote and local temperature
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LM96163
SNAS433D
LM96163
2N3904
12-Step
intel processor transistor count through 2013
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Untitled
Abstract: No abstract text available
Text: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features BVCEO > 80V Ic = 1A High Continuous Collector Current
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BCX5616Q
500mV
BCX5316Q
AEC-Q101
DS37024
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