smps high power
Abstract: NCP1392 three phase pfc kW
Text: NCP1392B, NCP1392D High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B/D is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver
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NCP1392B,
NCP1392D
NCP1392B/D
NCP1392/D
smps high power
NCP1392
three phase pfc kW
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Untitled
Abstract: No abstract text available
Text: NCP1392B, NCP1392D High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B/D is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver
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NCP1392B,
NCP1392D
NCP1392B/D
NCP1392/D
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0118B
Abstract: L5901 APL5901 APL5902 marking 51 "SC-62" regulator
Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA
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APL5901/2
900mA
APL5901/2
OT-89,
OT-89-5,
OT-223,
O-252
O-252-5
100Hz
0118B
L5901
APL5901
APL5902
marking 51 "SC-62" regulator
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Untitled
Abstract: No abstract text available
Text: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features • • • • • • • • • Low Noise : 50µVRMS 100Hz to 100kHz Low Quiescent Current : 50µA (No load) Low Dropout Voltage : 210mV (@900mA) Very low Shutdown Current : < 1µA
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APL5901/2
900mA
APL5901/2
OT-89,
OT-89-5,
OT-223,
O-252
O-252-5
100Hz
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transistor marking A9
Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
Text: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P
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APL5501/2/3
500mA
150mA
OT-23-5,
OT-89,
OT-89-5,
OT-223,
O-252
O-252-5
APL5501
transistor marking A9
diode MARKING A9
diode MARKING CODE A9
A9 sot223
mosfet marking a9
L55012
p1 52ax
52LX
marking 24b sot-23
51DX
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BFQ234/I
Abstract: BFQ234 BFQ254
Text: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and
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OT172
OT172A3
BFQ234
OT172A1
BFQ234/I
---t-33-05
BFQ234;
BFQ234/I
7110fleb
BFQ254
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Untitled
Abstract: No abstract text available
Text: 2SA1244 TOSHIBA 2 S A 1 244 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS • • • U nit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .4 V (Max.) at Iq = - 3 A High Speed Switching Time : tstg = 1.0 jus (Typ.)
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2SA1244
2SC3074
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tic 245
Abstract: feme
Text: B E I MICRO DEVICES RF2129 _ 2.5GHZ LINEAR POWER AMPLIFIER 3V, Typical A pplications Commercial and Consumer Systems • PCS Communication Systems Portable Battery Powered Equipment • Wireless LAN Systems Broadband Spread Spectrum Systems E
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RF2129
RF2129
tic 245
feme
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transistor vergleichsliste
Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Text: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N
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TRANSISTOR BO 344
Abstract: V/Iadje
Text: >: >:-Xv ¿C->:ÿ>:o >: • -;
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RF2512
TRANSISTOR BO 344
V/Iadje
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tpv394a
Abstract: RF TV TRANSMITTER tv transmitter amplifier circuit arco 404 Arco 423 VHF transmitter circuit arco 403
Text: 4bE D flOTOROLA SC XSTRS/R F MOTOROLA • I SEMICONDUCTOR ^ b3b?254 OG'iSBll 4 ■ HOTb T=-53-OB TECHNICAL DATA The RF Line TPV394A VH F Linear Power Transistor . . . d e s ig n e d s p e c ific a lly fo r ban d III T V tra n s p o s e rs a n d tra n s m itte r a m p lifie rs. The
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0GT5311
TPV394A
TPV394A
244C-01,
b3b72S4
T-33-05
RF TV TRANSMITTER
tv transmitter amplifier circuit
arco 404
Arco 423
VHF transmitter circuit
arco 403
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Untitled
Abstract: No abstract text available
Text: RFH RF2155 MICRO DEVICES 3 V PROGRAMMABLE GAIN POWER AM PLIFIER T y p ic a l A p p lic a tio n s • Analog Communication Systems • Driver Stage for Higher Power Applications • 900M Hz Spread Spectrum Systems • 3 V Applications 2 A M P L IF IE R S • 4 0 0 MHz Industrial Radios
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RF2155
RF2155
915MHz.
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MZ 9 TRANSISTOR
Abstract: No abstract text available
Text: R F RF2103P H MICRO DEVICES MEDIUM POW ER LINEAR AM PLIFIER Typ ical A p plications • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • Commercial and Consumer Systems 2 POWER AMPLIFIERS • Driver for Higher Power Linear Applications • Base Station Equipment
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RF2103P
RF2103P
450MHz
1000MHz.
---------27dBm
---------24dBm
21dBm
18dBm
15dBm
MZ 9 TRANSISTOR
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2SC3603
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
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2SC3603
2SC3603
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • ^ = 5.5GHz • Gold metalization for high reliability BFP 136W PAs Q62702-F1575 1 =E N> I! O ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1575
OT-343
900MHz
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Untitled
Abstract: No abstract text available
Text: HA-2444/883 Semiconductor Selectable, Four Channel Video Operational Amplifier August 1998 Features Description • This Circuit is Processed in Accordance to MILSTD-883 and is Fully Conform ant Under the Pro visions of Paragraph 1.2.1. The HA-2444/883 is a channel-selectable video op amp consisting
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HA-2444/883
MILSTD-883
HA-2444/883
HA-2444/883s
10MHz
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transistor bo 244
Abstract: transistor C 245 b 2sc2058s
Text: 2SC2058S Transistor, NPN Features Dimensions Units : mm • available in SPT (SC-72) package • small collector capacitance, typically C0b = 1-6 pF low base resistance and high gain for excellent noise response • 2SC2058S (SPT) ,4 ± 0 . 2 , 2 ± 0 2
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2SC2058S
SC-72)
2SC2058S
transistor bo 244
transistor C 245 b
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case 244c-01
Abstract: RF1031
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF1031 The RF Line UHF Power Transistor TO 1 GHz 4.5 WATTS LINEAR UHF POWER TRANSISTOR NPN SILICON . . . d e s ig n e d p r im a r ily fo r w id e b a n d , la rg e 'S ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s to
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RF1031
244C-01,
case 244c-01
RF1031
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BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
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BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
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transistor BD 246
Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Text: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A
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BD135
BD136
STD-750.
OT-32
40PEP
80PEP
OT-32
O-66P
transistor BD 246
transistor BD 135
transistor bd 242
BD135 switch
BD139
BD139-6
transistor BD
transistor BD 246 b
transistor BD 249
bd135 texas instruments
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INTERMET
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by BUH51/D SEMICONDUCTOR TECHNICAL DATA B UH 51 Advance Information S W IT C H M O D E NPN S ilico n P la n a r P o w e r TVansistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific s ta te -o f-a rt die designed fo r use in
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BUH51/D
BUH51
X34549C
INTERMET
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lfe10
Abstract: No abstract text available
Text: G en eral S e m ic o n d u c t o r v _ BS850 DMOS Transistor P-Channel % TO-236AB (SOT-23) 0.031 (0.8) H h Top View -£p - 0.0 3 5 (0 .9 ) 0.079 (2.0) Pin Configuration 1. Gale 2. Source 3. Drain -E & - -E Ö - -0.037 (0.95) 0.037 (0.95) - Mounting Pad Layout
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BS850
O-236AB
OT-23)
OT-23
E8/10K
30K/box
BSS50
lfe10
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motorola transistor 5331
Abstract: BFQ268
Text: Philips Semiconductors bbS3T31 DD317LÛ 64^ MAPX NPN 1 GHz video transistor ^ BFQ268; BFQ268/I N DESCRIPTION Product specification AMER PHILIPS/DISCRETE b^E D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a gold sandwich metallization to
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bbS3T31
DD317bÃ
BFQ268;
BFQ268/I
BFQ268
OT172A1)
BFQ268/I
OT172A3
motorola transistor 5331
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ad520
Abstract: AD520 differential amplifier
Text: Serial Input 16-Bit 4-20 mA, 0-20 mA DAC ANALOG ► DEVICES FU NC TIO N AL BLOCK DIAGRAM FEATURES 4—20 mA, 0-20 mA or 0-24 m A Current Output 16-Bit Resolution and Monotonicity ±0.012% max Integral Nonlinearity ±0.05% max Offset Trimmable ±0.15% max Total Output Error (Trimmable)
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16-Bit
16-Bit
24-Pin
AD420
AD420N,
AD420R
AD420
24-Lead
ad520
AD520 differential amplifier
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