LCD TV SCHEMA
Abstract: pc817 emitter follower schema LCD TV ordering information of pc817 pc817 dual BY265 tv lcd schema 1SMB33AT3G 4D151K PC817
Text: AND8279 The LCD TVs Standby Power Consumption Reduction Prepared by: Stanislav Raska App. Lab. ON Semiconductor Roznov p.R. http://onsemi.com A typical block schema of the TVs power supply unit PSU is shown on Figure 1. A major power loss of the standby supply unit (SSU)
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AND8279
AND8279/D
LCD TV SCHEMA
pc817 emitter follower
schema LCD TV
ordering information of pc817
pc817 dual
BY265
tv lcd schema
1SMB33AT3G
4D151K
PC817
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BCK3501
Abstract: 600 watt smps schematic BCK3501-078 600 watt smps schematic llc 500 watt smps schematic NCP1351B schematic SMPS set top box 1000 WATT smps SMPS 12V llc LLC resonant full bridge schematic
Text: AND8344/D Implementing an LCD TV Power Supply with the NCP1392B, NCP1606 and NCP1351B http://onsemi.com Prepared by: Jaromir Uherek ON Semiconductor Overview 30 mm. The compact size allows the design to fit into the frame of an LCD TV. An overview of the entire circuit is
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AND8344/D
NCP1392B,
NCP1606
NCP1351B
265Vac
NCP1606
NCP1392
BCK3501
600 watt smps schematic
BCK3501-078
600 watt smps schematic llc
500 watt smps schematic
NCP1351B
schematic SMPS set top box
1000 WATT smps
SMPS 12V llc
LLC resonant full bridge schematic
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3713FE 4.5mm 1/4 inch EIS CCD Area Image Sensor • Overview ■ Pin Assignments OD 1 16 PW øR 2 15 ø V4 RD 3 14 ø V3 VO 4 13 ø V2 M Di ain sc te on na tin nc ue e/ d The MN3713FE is a 4.5mm (1/4 inch) Interline Transfer CCD (ITCCD) solid state image sensor device.
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MN3713FE
MN3713FE
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NCP1392BD
Abstract: IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters
Text: NCP1392B High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver accepts bulk
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NCP1392B
NCP1392B
NCP1392/D
NCP1392BD
IC 1392B
1392B
ballast Self-Oscillating
NCP1392
smps high power
smps resonant llc
NCP1392BDR2G
SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET
LLC resonant converters
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3723FE 4.5mm 1/4 inch EIS CCD Area Image Sensor • Overview ■ Pin Assignments M Di ain sc te on na tin nc ue e/ d The MN3723FE is a 4.5mm (1/4 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MN3723FE
MN3723FE
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3713FE 4.5mm 1/4 inch EIS CCD Area Image Sensor • Overview ■ Pin Assignments M Di ain sc te on na tin nc ue e/ d The MN3713FE is a 4.5mm (1/4 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MN3713FE
MN3713FE
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Untitled
Abstract: No abstract text available
Text: CCD Area Image Sensor MN3723FE 4.5mm 1/4 inch EIS CCD Area Image Sensor • Overview ■ Pin Assignments M Di ain sc te on na tin nc ue e/ d The MN3723FE is a 4.5mm (1/4 inch) Interline Transfer CCD (ITCCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section
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MN3723FE
MN3723FE
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BFQ268
Abstract: No abstract text available
Text: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with
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BFQ268;
BFQ268/1
711002t)
BFQ268
OT172A1)
BFQ268/I
OT172A3
BFQ268/I
004SbbD
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341 tny 175 BUK455 BUK455-100A BUK455-100B T0220AB data transistor 1650
Text: PHILIPS INTERNATIONAL bSE D • 7110fl2b ODbMOfll 067 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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7110flSb
BUK455-100A/B
T0220AB
BUK455
-100A
-100B
TRANSISTOR BO 344
TRANSISTOR BO 341
tny 175
BUK455-100A
BUK455-100B
data transistor 1650
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smd ya transistor
Abstract: TRANSISTOR BO 344 BSH203 SMD TRANSISTOR qd
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH203 P-channel enhancement mode MOS transistor 1998 Mar 31 Preliminary specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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BSH203
135108/00/02/pp8
smd ya transistor
TRANSISTOR BO 344
BSH203
SMD TRANSISTOR qd
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BSH201
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BSH201 P-channel enhancement mode MOS transistor 1998 Apr 01 Objective specification Supersedes data of 1998 Feb 03 File under Discrete Semiconductors, SC13b Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors
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BSH201
SC13b
135108/00/02/pp8
BSH201
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G-4035
Abstract: g4035 transistor g4035
Text: r Z 7 Ä T# S G S - R T H O M S O N LESM KS M JE 3440 SILICON NPN TRANSISTOR . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed tor use in consumer and industrial
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MJE3440
OT-32
G-4035
g4035
transistor g4035
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ZTX752 equivalent
Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Text: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request
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ZVP2106C
ZVP2110A
ZVP2110C
ZVP2120A
ZTX788B
ZVP2120C
ZVP3306A
ZVP3310A
ZVP4105A
2110C
ZTX752 equivalent
transistor 42-10a data
BC369
FXTA92
BSS98
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLV2045N UHF power transistor 1998 Apr 07 Preliminary specification Supersedes data of 1997 Oct 23 File under Discrete Semiconductors, SC19a Philips Semiconductors PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification
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BLV2045N
SC19a
OT390A
125108/00/02/pp8
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FD sot457
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S ATA S&flEET BSH207 P-channel enhancement mode MOS transistor Objective specification Supersedes data of 1997 Nov 26 File under Discrete Semiconductors, SC13 Philips Semiconductors 1998 Apr 01 PHILIPS PHILIPS Philips S e m ico n d u cto rs
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BSH207
135108/00/02/pp8
FD sot457
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TRANSISTOR BO 344
Abstract: V/Iadje
Text: >: >:-Xv ¿C->:ÿ>:o >: • -;
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RF2512
TRANSISTOR BO 344
V/Iadje
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ PHP222 Dual P-channel enhancement mode MOS transistor 1998 Apr 01 Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 Philips Semiconductors PHILIPS PHILIPS P h ilip s S e m i c o n d u c t o r s
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PHP222
OT96-1
SCA59
135108/00/03/pp8
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MZ 9 TRANSISTOR
Abstract: No abstract text available
Text: R F RF2103P H MICRO DEVICES MEDIUM POW ER LINEAR AM PLIFIER Typ ical A p plications • Digital Communication Systems • Portable Battery Powered Equipment • Spread Spectrum Communication Systems • Commercial and Consumer Systems 2 POWER AMPLIFIERS • Driver for Higher Power Linear Applications • Base Station Equipment
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RF2103P
RF2103P
450MHz
1000MHz.
---------27dBm
---------24dBm
21dBm
18dBm
15dBm
MZ 9 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -20 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors
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BLS2731
SC19a
BLS2731-20
OT445C
i25io8/oo/o3/P
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BLS2731-10
Abstract: No abstract text available
Text: DISC RETE S E M IC O N D U C TO R S [n]EE¥ BLS2731 -10 Microwave power transistor Preliminary specification Supersedes data of 1997 Nov 05 File under Discrete Semiconductors, SC19a Philips Semiconductors 1998 Mar 06 PHILIPS PHILIPS Philips S e m ico nd uctors
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BLS2731
SC19a
BLS2731-10
OT445C
125108/00/03/pp12
BLS2731-10
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"MARKING CODE P5"
Abstract: BFG425W
Text: DISC RETE S E M IC O N D U C TO R S M EUT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors
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BFG425W
125104/00/04/pp12
"MARKING CODE P5"
BFG425W
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TRANSISTOR BO 344
Abstract: TRANSISTOR BO 341
Text: S G S -T H O M S O N M e iM a ie « B U L48 HIGH VOLTAGE NPN MULTIEPITAXIAL FASTSWITCHING TRANSISTOR . HIGH VOLTAGE CAPABILITY . TIGHT CONTROL OF DYNAMIC CHARACTERISTICS . MINIMUM LOT TO LOT SPREAD FOR RELIABLE OPERATION . LOW BASE DRIVE REQUIREMENTS
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BUL48
BUL48
GC2S780
TRANSISTOR BO 344
TRANSISTOR BO 341
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Untitled
Abstract: No abstract text available
Text: RF2903 M I C R O -DEVICES INTEGRATED SPREAD SPECTRUM RECEIVER Typical Applications • Spread Spectrum Systems • Dual Mode Digital/Analog Receivers • Dual-IF Strip for PCS and 2.4 GHz ISM • POS Terminals Band Receivers • Commercial Handheld Systems
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RF2903
RF2903
150MHz
1000MHz
200MHz,
Str00-3C
RF2903PCBA
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transistor marking 2d ghz
Abstract: BFG41OW
Text: DISC RETE S E M IC O N D U C TO R S BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Mar 11 PHILIPS PHILIPS Philips S e m ico nd uctors P ro d u c t specification
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BFG410W
125104/00/04/pp12
transistor marking 2d ghz
BFG41OW
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