Q62702-D401
Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
Text: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly
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fl23SbDS
Q62702-D395
330/BD
Q62702-D401
Q62902-B63
200ps[
23SbOS
Q0043S1
Q62702-D401
TRANSISTOR bd 330
b0330
A-04
Q62702-D395
Q62902-B63
spring washer
330 transistor
transistor BD 329
4l transistor
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IRGPC46
Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate
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O-247AC
IRGPC46
10a 100v bipolar transistor
mosfet induction heater
S101
SS452
VQE 21 d
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATU RES * * * Fast switching Guaranteed hFE specified up to 20 Am ps Low collector-emmiter saturation voltage T0126 ABSOLUTE M A XIM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage
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ZBD849
T0126
I7DS76
0Q1Q354
001G35S
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42t sot-23
Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Text: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen
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BCW61B
BCX716
BCX71J
BCW60
42t sot-23
BCD Schalter
TFK BB
transistor BC 458
BCX 458
TFK AF
tfk s 154 p
am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716
tfk 715
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2SD2539 equivalent
Abstract: No abstract text available
Text: TOSHIBA 2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage V C BO = 1 5 0 0 V Low Saturation Voltage VCE sat = 5 V (Max.) High Speed tf = 0.3 pis (Typ.) Bulkin Damper Type
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2SD2539
2SD2539 equivalent
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L VALUE UNIT v CBO -50 V v CEO -45 V V EBO -5 V Peak Pulse Current 'cm -1 A Continuous Collector Current 'c -800 mA Power Dissipation at Tamlj=25°C ^tot
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-100nA
-100jiA
-500mA,
-50mA*
-300mA,
-100mA,
300mA,
50MHz
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NPN 350W
Abstract: powertech
Text: “BIG IDEAS IN BIG POWER” • PowerTech BO AM PERES PT-7510 SILICON NPN TRANSISTOR M AXIM UM RATINGS SYMBOL Collector-Base Voltage V CBO C o llector-E m itter Voltage V CEO Emitter-Base Voltage PT-7510 200V 200V 10V V EBO Peak C ollector Current 'c m *
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PT-7510
PT-7510
NPN 350W
powertech
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATURES * Fast sw itchin g * G uaranteed h FE specified up to 20 A m p s * L o w collector-em m iter saturation v olta ge T0126 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L
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ZBD849
T0126
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISSU E 3 -OCTOBER 1995 BCX41 O ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Emitter Voltage VALUE UNIT V V CES 125 Collector-Emitter Voltage VcEO 125 V Emitter-Base Voltage V ebo 5 V Peak Pulse Current
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BCX41
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zq 405-MF
Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Text: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23b320
BFP193
62702-F
OT-143
zq 405-MF
siemens 30 090
GP 819
SAA 1006
saa 1070
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639 TRANSISTOR PNP
Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
639 TRANSISTOR PNP
transistor ESM 692
NPN 337
esm 2907 pnp transistor
npn 2222 transistor
transistor C 548 B
BC516
E C B BC 635 TRANSISTOR
BC 557 PNP TRANSISTOR
transistor bf 422 NPN
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BF298
Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .
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BCW94
BF298
BC 458
transistors BC 458
transistors BC 548 BC 558
transistor BC 458
transistor bf 422 NPN
bc 457
transistors BC 548 BC 558 PNP
BC 557 npn
Transistor BC 457
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TRANSISTOR BC 213
Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
TRANSISTOR BC 213
TRANSISTOR BC 181
bf 239
BF 212 transistor
transistor bf 184
BF 184 NPN transistor
TRANSISTOR BC 212
TRANSISTOR BC 174
transistor BC 338
BF 184 transistor
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transistor Bc 540
Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .
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BCW94
CB-76
transistor Bc 540
TRANSISTOR BC 135
transistor Bc 540 pin
BC 540 TRANSISTOR
Bc 540
transistor B 540
bcw 25 transistor
bcw 91 transistor
ESM635
transistor BC 635
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transistor Bc 540
Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
transistor Bc 540
transistor BC 341-6
transistor BC 660
transistor 3702
transistor 3707
transistor 2n 2222
transistor Bc 7
NPN transistor 2n 3904
transistors BC 225
transistor BC 310
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transistor bc 488
Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
BC317P.
transistor bc 488
transistor bc 557 c
bc 547 b transistor
TRANSISTOR C 557 B
TRANSISTOR BC 550 b
transistor BC 490
C 547 B pin configuration
bc 547 transistor
transistor BC 557
transistor C 548 B
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transistor BC 310
Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .
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BCW94
CB-76
BC317P.
transistor BC 310
transistor bc 487
transistor BC 321
TRANSISTOR BC 416 b pnp
bc 337-25 transistor
TRANSISTOR BC 415
transistor bc 318
transistor BC 337-25
TRANSISTOR BC 413
bc 337-40 transistor
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Untitled
Abstract: No abstract text available
Text: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I
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HFA3101
HFA3101
1340nm
1320nm
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM O S V is a new le ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is lan ce area product a bo u t o n e -h a lf th a t of sta n d ard M O SFETs. T h is
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0E-05
0E-01
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TP15N06
Abstract: P15N06V TP15N06V 15N06VL
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP15N06VL TMOS V Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea prod u ct a bo u t o n e -h a lf th a t ot sta n d a rd M O S FE Ts. This
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Untitled
Abstract: No abstract text available
Text: " big ideas in BIG POWER' POWeR- M B P ow erT ech 90 AMPERES PT-7511 SILICON NPN TRANSISTOR M A X IM U M R A T IN G S SYM BO L C o lle c t o r P-5-S-7 V o lt a g e 20Q V V CBO C u L lic it n - E r r in r e i V o lt a g e 2nov v ceC? E m itts i- B a - ie V o lt a g e
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PT-7511
701/C
200mA.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TD15N06VL TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0-085 OHM N-Channel Enhancement-Mode Silicon Gate TM O S V i s a new te ch n o lo g y d esig n ed to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. T h is
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SD1272
Abstract: SD1272-2 M113
Text: • Æ SR J ipl°? a itsn — -, ? iW IC r D S G f f ll W W W »»»» P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 o n . 0 7 0 SD 1272-2 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS
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SD1272-2
230MHz
175MHz
SD1272-2
S88SD1272-2
SD1272
M113
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BUL 380
Abstract: BUL 390 NPN Transistor 10A 24V transistor sd 965 SD1400-03 M118 930MHZ 25CC SD1400-3
Text: H ffS-nnnnj-*. »ra r* S IV U C r O S e m i P ro g re s a P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 b U l 4 U U -0 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR
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900-960MHZ
930MHz
SD1400-03
SD1400-3
960MHz
SD1400-3
BUL 380
BUL 390
NPN Transistor 10A 24V
transistor sd 965
M118
930MHZ
25CC
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