TRANSISTOR BU 210 Search Results

TRANSISTOR BU 210 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BU 210 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PPCP Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk Text: Proximity Sensors Inductive ABS Housing Types DJ, Ø 77 and EI, Ø 77 • ABS housing, Ø 77 mm • Sensing distance: 40 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: Namur (DIN 19234) Transistor NPN or PNP, make or break switching • Protection: Reverse polarity	Original	PDF	DJ40/EI PPCP transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
transistor BU 102 Abstract: bk 101 transistor SS TRANSISTOR DIN19234 Text: Proximity Sensors Inductive ABS Housing Type DU, Fork-shaped • Fork-shaped ABS housing • Slot sizes: 3.5, 5, 6, 10 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: NAMUR (DIN 19234) Transistor NPN, make switching • Protection: Reverse polarity	Original	PDF
w016 Abstract: SL1018 3By marking bu 11 af AMP MODU 2 Marking W016 mute detector muting SSG 23 TRANSISTOR V6 marking code diode Text: SL1018 Semiconductor FM IF SYSTEM Description The SL1018 has versatile muting characteristics and allows receiver designers to realize the muting performance according to their design concept. Functions • FM IF Amplifier/Limiter • Quadrature Detector • AFC Clamp • AGC Drive	Original	PDF	SL1018 SL1018 400Hz -75KH -75KHz KSI-W016-000 w016 3By marking bu 11 af AMP MODU 2 Marking W016 mute detector muting SSG 23 TRANSISTOR V6 marking code diode
up/tic 236b Abstract: No abstract text available Text: BL9180 Dual,3 Dual,300mA UltraUltra-low Noise CMOS LDO Regulator FEATURES DESCRIPTION Up to 300mA Output Current Each LDO The BL9180 dual, low noise, low-dropout regulator Dual Shutdown Pins Control Each Output supplying up to 300mA output current at each	Original	PDF	BL9180 300mA BL9180 220mV 300mA up/tic 236b
Untitled Abstract: No abstract text available Text: BU _ Z80A PowerM OS transistor N AUER PHILIPS/DISCRETE OLE D • bbSBTBl □ 014S4CI T ■ T -S 9 -H May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	014S4C BUZ80A_ BUZ80A T-39-11
MTPBP10 Abstract: UL-44 l44 transistor transistor L44 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pffcr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed	OCR Scan	PDF	BUL44/BUL44F MTPBP10 UL-44 l44 transistor transistor L44
BUH713 Abstract: No abstract text available Text: SGS-THOMSON IM O e œ iL i © « BU H 713 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE U.L. F ILE # E81734(N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR	OCR Scan	PDF	ISOWATT218 E81734 BUH713
L146F Abstract: No abstract text available Text: MOTOROLA Order this document by BUL146/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet BUL146* BU L146F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device The BUL146/BUL146F have an applications specific s ta te -o f-th e -a rt die designed	OCR Scan	PDF	BUL146/D BUL146* L146F* BUL146/BUL146F BUL44F 221D-02 O-220 L146F
V103 TRANSISTOR Abstract: BUZ80A T0220AB V103 buz80 Text: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in	OCR Scan	PDF	BUZ80A_ T0220AB; BUZ80A 00mSS5 T-39-11 V103 TRANSISTOR BUZ80A T0220AB V103 buz80
m605 Abstract: 1di200 m602 ic 6DI30B-050 Text: Q BIPOLAR TRANSISTOR MODULES Ratings and Specifications 1400 volts class pow er transistor m odules • P o w e r tra n sisto rs and free w h e e l d io d e s are bu ilt into o n e package. • T e rm in a l la yo u t in w h ic h driv e w irin g and p o w e r w irin g d o not c o m e accross.	OCR Scan	PDF	2DI30A-140 2DI100A-140 1DI200A-140 2DI200A-020 m605 1di200 m602 ic 6DI30B-050
TDA 4600-2 Abstract: Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100 Text: S IE M E N S Control ICs for Switched-Mode Power Supplies TDA 4601 Bipolar IC Features • • • • • Direct control of the switching transistor Low start-up current Reversing linear overload characteristic Base current drive proportional to collector current	OCR Scan	PDF	Q67000-A2379 4601-D Q67000-A2390 P-DIP-18 4601/D /125V TDA 4600-2 Q63100-P2462-J29 siemens PTC thermistor j29 2501 optocoupler smps control ic with 6 pin sip TDA 4601 Self Oscillating Flyback Converters P2462-J29 Self-Oscillating Flyback Converters Q63100
VEB mikroelektronik Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft Text: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP	OCR Scan	PDF	57AHNSDORP VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
IR 92 0151 Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184 Text: MO TO RO LA SC XSTRS/R F 12E D \| b3b?2S4 QGâMflQâ 2 \| MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.	OCR Scan	PDF	AN415A) IR 92 0151 transistor BU 109 bu326 t 326 Transistor transistor BU 184
transistor 5BM Abstract: BUK443 BUK443-60A BUK443-60B Text: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In	OCR Scan	PDF	0D3D51S BUK443-60A/B PINNING-SOT186 BUK443 transistor 5BM BUK443-60A BUK443-60B

FF15R10K Abstract: No abstract text available Text: 7 *39-3/ F F 15R 10K SSE EUPEC D Ü D D lf iE Thermische Eigenschaften Transistor Transistor 34032^7 i RthJC Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1000 V 15 A RthCK lc 54b «U PEC Thermal properties DC, pro Baustein/per module	OCR Scan	PDF	FF15R10K 34D32CI7 FF15R10K
transistor kt 326 Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816 Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j \| R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice	OCR Scan	PDF
RCA transistor 40410 Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410 Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V	OCR Scan	PDF	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER MODULE M57774 220-225MHZ, 12.5V, 30W, FM MOBILE RADIO Dimensions in mm OUTLINE DRAWING PIN : Pin VCC1 ®VCC2 ©PO ®GND : : : : : RF INPUT 1st. DC SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H2 ABSOLUTE MAXIMUM RATINGS Tc = 25 °C unless otherwise noted	OCR Scan	PDF	M57774 220-225MHZ, Parame90
pt100 LAPP Abstract: IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751 Text: B U R R -B R O W N I XTR105 1 www. bu rr-b rown.com/d ata boo k/XTR105. htm I 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR • INDUSTRIAL PROCESS CONTROL • TWO PRECISION CURRENT SOURCES	OCR Scan	PDF	XTR105 k/XTR105. 4-20mA 30nAp-p 110dBmin 14-PIN SO-14 Pt100 pt100 LAPP IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751
Untitled Abstract: No abstract text available Text: B U R R -B R O W N XTR106 4-20mA CURRENT TRANSMITTER with Bridge Excitation and Linearization FEATURES APPLICATIONS • LOW TOTAL UNADJUSTED ERROR • PRESSURE BRIDGE TRANSMITTER • 2.5V, 5V BRIDGE EXCITATION REFERENCE • STRAIN GAGE TRANSMITTER • 5.1V REGULATOR OUTPUT	OCR Scan	PDF	XTR106 4-20mA i25ppm 25fiV/Â 110dBmin 14-PIN SO-14 D033b22 ZZ235
transistor 123 DL Abstract: F6-15R10K Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor Itansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module	OCR Scan	PDF	F6-15R10K 34d32ci7 transistor 123 DL F6-15R10K
Untitled Abstract: No abstract text available Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N « \| b b \| XTR110 PRECISION VOLTAGE-TO-CURRENT CONVERTER/TRANSMITTER FEATURES APPLICATIONS • 4mA TO 20mA TRANSMITTER • INDUSTRIAL PROCESS CONTROL • SELECTABLE INPUT/OUTPUT RANGES:	OCR Scan	PDF	XTR110 10-turn LM324 IR513( IRFF9113 200mA 17313fcj5
Untitled Abstract: No abstract text available Text: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: 15 ÛEC PLE SS EY SEMICONDS D 3 7 böS EE 0D0Ô313 M « P L S B • PLESSEY Semiconductors. ZN447/ZN448/ZN449 " P - S 1 - I0 - Q 2 8-BIT MICROPROCESSOR COMPATIBLE A-D CONVERTERS The ZN447, ZN448 and ZN449 are 8-bit, successive approximation A-D converters designed for easy interfacing	OCR Scan	PDF	ZN447/ZN448/ZN449 ZN447, ZN448 ZN449

TRANSISTOR BU 210 Search Results

TRANSISTOR BU 210 Result Highlights (5)

TRANSISTOR BU 210 Datasheets Context Search

PPCP

transistor BU 102

w016

up/tic 236b

Untitled

MTPBP10

BUH713

L146F

V103 TRANSISTOR

m605

TDA 4600-2

VEB mikroelektronik

IR 92 0151

transistor 5BM

FF15R10K

transistor kt 326

RCA transistor 40410

Untitled

pt100 LAPP

Untitled

transistor 123 DL

Untitled

Untitled

Untitled