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    TRANSISTOR BU808DFX Search Results

    TRANSISTOR BU808DFX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    BU808DFX

    Abstract: BU808DF transistor bu808dfx BU808*DFX bu808 BU808DFX-LF BU808d NPN POWER DARLINGTON kong bu808dfxlf
    Text: JOYVIRTUE BU808DFX HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR DESCRIPTION The BU808DFX is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.


    Original     		PDF BU808DFX BU808DFX BU808DFX-LF Rm03-05, BU808DF transistor bu808dfx BU808*DFX bu808 BU808DFX-LF BU808d NPN POWER DARLINGTON kong bu808dfxlf