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    TRANSISTOR BUT 12 Search Results

    TRANSISTOR BUT 12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUT 12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C 1972 transistor

    Abstract: transistor PNP TIP2955 TIP2955 DATA transistor tip2955
    Text: TIP2955 PNP SILICON POWER TRANSISTOR ● Designed for Complementary Use with the TIP3055 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available This model is currently available, but not


    Original     		PDF TIP2955 TIP3055 global/pdfs/TSP1203 OT-93 SAS638AB TIS637AB C 1972 transistor transistor PNP TIP2955 TIP2955 DATA transistor tip2955

    motorola transistor

    Abstract: Using Linvill Techniques for R. F. Amplifiers MM1941 2N2221 Using Linvill Techniques transistor for RF amplifier and mixer an238 motorola amplifier mixer circuit high frequency mixer 2N2221A
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by AN238/D AN238 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Transistor Mixer Design Using 2-Port Parameters


    Original     		PDF AN238/D AN238 motorola transistor Using Linvill Techniques for R. F. Amplifiers MM1941 2N2221 Using Linvill Techniques transistor for RF amplifier and mixer an238 motorola amplifier mixer circuit high frequency mixer 2N2221A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from 50 MHz to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can


    Original     		PDF SGA-8543Z SGA-8543Z EDS-102583

    J119 transistor

    Abstract: bipolar transistor ghz s-parameter 140C SGA-8543Z SiGe POWER TRANSISTOR
    Text: Preliminary SGA-8543Z Product Description Sirenza Microdevices’ SGA-8543Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 3.5 GHz. The SGA-8543Z is optimized for 3.3V operation but can be


    Original     		PDF SGA-8543Z SGA-8543Z EDS-102583 J119 transistor bipolar transistor ghz s-parameter 140C SiGe POWER TRANSISTOR

    KVS-2023

    Abstract: ic iR light control
    Text: Visible Light Sensor KVS-2023 DIMENSIONS Unit : mm The KVS-2023 is the optical sensor with high sensitivity of the visible light. It is a photo transistor with IR filter inside. FEATURES • High sensitivity in a visible area, but little sensitivity in others (UV and IR)


    Original     		PDF KVS-2023 KVS-2023 100lx) 500lx) 1000lx) ic iR light control

    Untitled

    Abstract: No abstract text available
    Text: BUX85 NPN SILICON POWER TRANSISTOR ● 40 W at 25°C Case Temperature ● 2 A Continuous Collector Current ● 3 A Peak Collector Current ● Typical tf = 200 ns at 25°C This series is currently available, but not recommended for new designs. TO-220 PACKAGE


    Original     		PDF BUX85 O-220 TCP741AL

    a83z

    Abstract: A83Z data SGA8343Z transistor A83 2.4 ghz passive rfid AN-044 bipolar transistor ghz s-parameter SGA-8343 SGA-8343Z SGA 8343Z
    Text: SGA-8343 SGA-8343Z Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage


    Original     		PDF SGA-8343 SGA-8343Z SGA-8343 EDS-101845 a83z A83Z data SGA8343Z transistor A83 2.4 ghz passive rfid AN-044 bipolar transistor ghz s-parameter SGA-8343Z SGA 8343Z

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    ACPL-P454

    Abstract: ACPL-P454-560E ACPL-W454 HCPL-4504 hcpl450 970250
    Text: ACPL-P454/W454 High CMR High Speed Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with


    Original     		PDF ACPL-P454/W454 ACPL-W454/P454 ACPLW454/P454 ACPL-W454) AV01-0253EN AV02-1307EN ACPL-P454 ACPL-P454-560E ACPL-W454 HCPL-4504 hcpl450 970250

    simplest flyback converter

    Abstract: PB2134 isolated flyback converter with optocoupler optocoupler based isolated dc to dc converter LT1725 LTC4257-1 2N7002 B0540W BAS21LT1 MMBT3904
    Text: advertisement Power over Ethernet Isolated Power Supply Delivers 11.5W at 90% Efficiency – Design Note 338 Jesus Rosales switches to turn on and off the better. A push-pull converter could be used, but the additional complexity is not justified at this power level. A single transistor forward


    Original     		PDF DN338 LT1725 dn338f simplest flyback converter PB2134 isolated flyback converter with optocoupler optocoupler based isolated dc to dc converter LT1725 LTC4257-1 2N7002 B0540W BAS21LT1 MMBT3904

    ac Inverter schematics 10 kw

    Abstract: INVERTER 50 kW 25 KW inverter ACPL-P454-000E ac Inverter 10 kw ACPL-P454 dc to ac inverter schematic diagram kw POWER SUPPLY transformer 100 kW ACPL-W454
    Text: ACPL-W454/P454 High CMR High Speed Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The ACPL-W454/P454 is similar to Avago Technologies other high speed transistor output optocouplers, but with


    Original     		PDF ACPL-W454/P454 ACPL-W454/P454 ACPLW454/P454 ACPL-W454) AV01-0253EN ac Inverter schematics 10 kw INVERTER 50 kW 25 KW inverter ACPL-P454-000E ac Inverter 10 kw ACPL-P454 dc to ac inverter schematic diagram kw POWER SUPPLY transformer 100 kW ACPL-W454

    SM200

    Abstract: Radar HV400 Radar Transponder HVV1011-300 HVV1214-100
    Text: The innovative Semiconductor Company! Technology Overview TM A NEW APPROACH TO SILICON RF POWER TRANSISTOR DESIGN Today’s radar and avionics applications demand RF power amplifiers that can deliver higher power density in smaller packages and with greater reliability. But, the silicon technologies currently used in most power transistors


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8343 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high


    Original     		PDF SGA-8343 SGA-8343 EDS-101845

    KVS5032

    Abstract: ic iR light control
    Text: Visible Light Sensor KVS5032 DIMENSIONS The KVS5032 is the optical sensor with high sensitivity of the visible light. It is a photo transistor with IR filter inside. Unit : mm 1.30 2 2.40 3.00 1.50 3 1 4 3.50 FEATURES TOP SURFACE • High sensitivity in a visible area, but little sensitivity


    Original     		PDF KVS5032 KVS5032 100lx) 500lx) 1000lx) ic iR light control

    Untitled

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO -220 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage : BUT 12 : BUT12A Collector Emitter Voltage : BUT12 : BUT 1 2A Collector Current (DC) Collector Current (Pulse)


    OCR Scan     		PDF BUT12/12A BUT12A BUT12 100mA,

    Untitled

    Abstract: No abstract text available
    Text: How To Handle Transistors Although SAN YO makes all possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: How To Handle Transistors Although SANYO makes ail possible efforts to assure quality and reliability in its development and production of transistor products, transistor reliability depends not only on the inherent factors in the transistors but also on the conditions under which the transistors are used. These


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor crystal DESCRIPTION X3A-BFR520 MECHANICAL DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied as whole wafer, fully tested but unsawn.


    OCR Scan     		PDF X3A-BFR520 BFR520 BFG520 OT143) BFP520 OT173) Fau134)

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal DESCRIPTION X3A-BFT93 MECHANICAL DATA PNP crystal used in BFQ23 SOT37 , BFQ24 (TO-72) and BFT93 (SOT23). Crystals are supplied as whole wafer, fully tested but unsawn. Top metallization


    OCR Scan     		PDF X3A-BFT93 BFQ23 BFQ24 BFT93

    730A-04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VDE UL C8A ®®®® 8ETI 8EMK0 DEMKO NEMKO BUT GlobalOptobolator 6-Pin DIP Optoisolators High Voltage Transistor Output 400 Volts [CTR • 20% Min] [CTR « 10% Min] [CTR ■ S% Min] ‘ Motorola Preferred Device


    OCR Scan     		PDF MOC8204, MOC8205 MOC8204* MOC8206 MOC82Q4 MQC8206 730A-04

    TRANSISTOR BC 157

    Abstract: TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34
    Text: TELEFUNKEN ELECTRONIC 17E D • f l^ O t n b □QO'353‘3 4 . BUT 93 W IUMFfaimm electronic Creàtiy*T«chnoiosa r - 2 3 - i! Silicon NPN Power Transistor Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF T0126 15A3DIN TRANSISTOR BC 157 TRANSISTOR BC 158 BY22B transistor BC 245 c B13 IC marking code Transistor SJ 2517 sj 2518 TRANSISTOR as BC 158 SJ 2517 BFX34

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2. 3 ' / 5 " “ SEMELAB 37E LTD D • Û1331Û7 000017b SEMELAB JU L 0 6 1988 BUT 70 NPN MULTI-EPITAXIAL POWER TRANSISTOR MECHANICAL DATA Suitable for high efficiency switching applications Dimensions in mm FEATURES • VERY LOW VC6 SAT1 • HIGH CURRENT


    OCR Scan     		PDF 000017b 0-13mH

    transistor BC 245

    Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
    Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time


    OCR Scan     		PDF 00DRS51 flBES100 T0126 15A3DIN transistor BC 245 transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126

    BUT93

    Abstract: BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11
    Text: A E G CORP 17E D 002=142^ G QCHSBI fi BUT 93 •BHILIIFmiMKiliia electronic Creative Technologies r-2 3 -il Silicon NPN Power Transistor A p p lic a tio n : Switching mode power supply, electronic ballast Features: • In m ulti diffusion technique • Short sw itching tim e


    OCR Scan     		PDF r-23-il 0G2142b T-33-11 BUT93 BY22B T3311 C 3311 transistor 14A3 BFX34 BY228 AEG v 300 transistor sc3 T-33-11