BUZ71A
Abstract: TB334
Text: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71A
TA9770.
O-220ABopment.
BUZ71A
TB334
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BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet December 2001 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71
TA9770.
O-220AB
BUZ71 application
BUZ71
TB334
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Untitled
Abstract: No abstract text available
Text: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS
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BUZ71
BUZ71A
O-220AB
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Untitled
Abstract: No abstract text available
Text: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
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BUZ71
Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
BUZ71A
TB334
TO 220AB Mosfet
TA9770
transistor buz71a
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BUZ71 application
Abstract: BUZ71 TB334
Text: BUZ71 Data Sheet June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ71
TA9770.
BUZ71
BUZ71 application
TB334
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transistor buz71a
Abstract: BUZ71A TB334
Text: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ71A
TA9770.
BUZ71of
transistor buz71a
BUZ71A
TB334
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68B09
SN74ALS04BN
SN74ALS08N
SN74ALS00AN
CA3046
uA733
LM311P
LM318
CA3094
78H05
cp4071
data sheet IC 7408
2N4891
IC 7408
MDA970A2
MDA2500
1854-0071
MDA2502
2N4342
IC TTL 7400
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BUZ71 dc to ac
Abstract: transistor buZ71 BUZ71 T0220AB buz71 philips IR 5331
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • t.t,S3T31 0014405 5 BUZ71 ^ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,
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S3T31
BUZ71
T0220AB;
BUZ71_
T-39-11
VDs-10V
BUZ71 dc to ac
transistor buZ71
BUZ71
T0220AB
buz71 philips
IR 5331
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buz71a
Abstract: No abstract text available
Text: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ71A
hhS3131
O220AB
T-39-11
bb53T31
buz71a
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transistor buz71a
Abstract: BUZ71 BUZ71A T0220AB
Text: PowerMOS transistor N A M ER BUZ71A P H IL IP S /D IS C R E T E OLE D • ^ 5 3 ^ 3 1 O G I M MCH 5 T-97-II May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ71A
bbS3T31
T-97-II
T-39-11
transistor buz71a
BUZ71
BUZ71A
T0220AB
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 DD144D2 5 ■ PowerM OS transistor BU Z71 |j May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
DD144D2
bb53T31
BUZ71
T-39-11
00144D7
BUZ71_
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Untitled
Abstract: No abstract text available
Text: BUZ71 Semiconductor Data Sheet June 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFET File Number 2418.2 Features • 14A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71
TA9770.
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Untitled
Abstract: No abstract text available
Text: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71A
TA9770.
BUZ71ALU
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Z71A
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON BUZ71A * 7 # , Riflô g^ i[Li TrmQ(gs N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on BUZ71A 50 V 0.12 fi Id 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:
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BUZ71A
00A//iS
Z71A
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BUZ71A
Abstract: 0120S
Text: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2
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BUZ71A
120S2
TA9770.
BUZ71A
0120S
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BUZ71A
Abstract: transistor buz71a din IEC 68-1
Text: SGS-THOMSON ^ 7 # M Ê IS M IL II ? » *! {Z T BUZ71A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS BUZ71A 50 V ^DS on 0.12 fi 'd 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:
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BUZ71A
00A//IS
BUZ71A
transistor buz71a
din IEC 68-1
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BUZ71
Abstract: diode din 4147
Text: BUZ71 {£} HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 14A, 50V • rDS on = 0-1 n • SOA is Power-Dissipation Limited DRAIN (FLANGE) u • Nanosecond Switching Speeds • Linear Transfer Characteristics
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BUZ71
BUZ71
diode din 4147
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BUZ71A
Abstract: BUZ71
Text: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics
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BUZ71A
T0-220AB
BUZ71A
BUZ71
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transistor 647
Abstract: BUZ71 PVAPOX 647 transistor
Text: 30E J> • 7T2T2_37 DO 3D 1Sb 3 M ^ ^ O i - S G S -T H O M S O N s 6 - s-thomson = L[I(g¥GM0 S BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
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BUZ71
95x95
16x18
transistor 647
PVAPOX
647 transistor
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552 MOSFET TRANSISTOR motorola
Abstract: 552 transistor motorola Z71A
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w
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BUZ71
BUZ71A
b3b725M
552 MOSFET TRANSISTOR motorola
552 transistor motorola
Z71A
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BU271
Abstract: TA9770
Text: BUZ71 intefeil Ju n e 1999 D ata S h e e t F ile N u m b e r 2 4 1 8 .2 Features 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET • 14A, 5 0V This is an N -Channel enhancem ent mode silicon gate power • rDS ON = 0.100S2 field effect transistor designed for applications such as
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BUZ71
100S2
TA9770.
BU271
TA9770
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PVAPOX
Abstract: No abstract text available
Text: S C S -T H O M S O N IIL IM « ! » BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 95 x 95 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
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BUZ71
16x18
PVAPOX
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BUZ71L
Abstract: BUZ-71L T39 diode S3848 Z71L
Text: MOTOROLA SC XSTRS/R F (□3b7254 5bE.D Q D T C HC m b Order this data sheet by BUZ71L/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA BU Z71L MTP14IM05L Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silico n Gate These T M O S Pow er FETs are designed for low voltage,
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3b7254
BUZ71L/D
MTP14IM05L
BUZ71L
BUZ71L
BUZ-71L
T39 diode
S3848
Z71L
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