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    TRANSISTOR BUZ71A Search Results

    TRANSISTOR BUZ71A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BUZ71A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ71A

    Abstract: TB334
    Text: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		PDF BUZ71A TA9770. O-220ABopment. BUZ71A TB334

    Untitled

    Abstract: No abstract text available
    Text: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS


    Original     		PDF BUZ71 BUZ71A O-220AB

    Untitled

    Abstract: No abstract text available
    Text: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as


    Original     		PDF BUZ71A BUZ71 TA9770.

    BUZ71

    Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
    Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as


    Original     		PDF BUZ71A BUZ71 TA9770. BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a

    transistor buz71a

    Abstract: BUZ71A TB334
    Text: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching


    Original     		PDF BUZ71A TA9770. BUZ71of transistor buz71a BUZ71A TB334

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    PA0016

    Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
    Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30


    Original     		PDF 14-dagar PA0016 STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor

    LM393 battery charging indicator

    Abstract: charge battery lm339 TIC226 Series application notes u2400 pikatron transformer CMOS 4060 thyristor battery charging U2400B thyristor tic226 U2402B
    Text: The U240xB Battery Charge IC Family Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Standard and Accelerated Battery Charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF U240xB U2400B BC237 BYW52 BD649 1N4148 1/2LM393 U2407B LM393 battery charging indicator charge battery lm339 TIC226 Series application notes u2400 pikatron transformer CMOS 4060 thyristor battery charging U2400B thyristor tic226 U2402B

    buz71a

    Abstract: No abstract text available
    Text: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ71A hhS3131 O220AB T-39-11 bb53T31 buz71a

    transistor buz71a

    Abstract: BUZ71 BUZ71A T0220AB
    Text: PowerMOS transistor N A M ER BUZ71A P H IL IP S /D IS C R E T E OLE D • ^ 5 3 ^ 3 1 O G I M MCH 5 T-97-II May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ71A bbS3T31 T-97-II T-39-11 transistor buz71a BUZ71 BUZ71A T0220AB

    Untitled

    Abstract: No abstract text available
    Text: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF BUZ71A TA9770. BUZ71ALU

    Z71A

    Abstract: No abstract text available
    Text: Æ 7 SGS-THOMSON BUZ71A * 7 # , Riflô g^ i[Li TrmQ(gs N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on BUZ71A 50 V 0.12 fi Id 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF BUZ71A 00A//iS Z71A

    BUZ71A

    Abstract: 0120S
    Text: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2


    OCR Scan     		PDF BUZ71A 120S2 TA9770. BUZ71A 0120S

    BUZ71A

    Abstract: BUZ71
    Text: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics


    OCR Scan     		PDF BUZ71A T0-220AB BUZ71A BUZ71

    552 MOSFET TRANSISTOR motorola

    Abstract: 552 transistor motorola Z71A
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ71 BUZ71A Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES RDS on = 0.10 and 0.12 OHMS 50 VOLTS T h e s e T M O S III P o w e r FETs a re d e s ig n e d f o r lo w


    OCR Scan     		PDF BUZ71 BUZ71A b3b725M 552 MOSFET TRANSISTOR motorola 552 transistor motorola Z71A

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    BUZ71A equivalent

    Abstract: IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642
    Text: y i/ iy j x iy i/ i F ix e d O u tp u t 10W CM O S Step-U p S w itc h in g R eg u lato rs _ F eatu res The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range.


    OCR Scan     		PDF MAX641/MAX642/MAX643 MAX641/642/643 BUZ71A equivalent IRL734 IRF540 MAX643XCSA how to stepup 1.5v to 5v, 12v TRANSISTOR+642

    IRL734

    Abstract: 1RF620 IRZ14 Diode c 642
    Text: y i/iy jx iy i/i F ix e d O utput 10W CMOS S tep-U p S w itch in g R egulators _ F eatures The MAX641/MAX642/MAX643 step-up switching regu­ lators are designed for minimum component DC-DC converter circuits in the 5mW to 10W range. ♦ Fixed +5V, +12V, +15V Output Voltages


    OCR Scan     		PDF MAX641/MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA IRL734 1RF620 IRZ14 Diode c 642

    JRF620

    Abstract: irl734 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 analog IRF513 dc-dc converter 12v to 5v 3a BUZ21 L equivalent BUZ71A equivalent MTP12N10L
    Text: y v i y j x i y n F ixe d O utput 10W CMOS S tep-U p S w itc h in g R egulators _ ♦ Fixed +5V, +12V, +15V Output Voltages Low-power applications require only an output filter ca­ pacitor and a small, low-cost inductor. An additional


    OCR Scan     		PDF MAX641 /MAX642/MAX643 MAX641/642/643 MAX643XCPA MAX643XCSA MAX643XC/D MAX643XEPA MAX643XESA MAX643XEJA MAX643XMJA JRF620 irl734 mosfet irf640 dc to dc converter Caddell-Burns IRZ14 analog IRF513 dc-dc converter 12v to 5v 3a BUZ21 L equivalent BUZ71A equivalent MTP12N10L

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit