BV4 transistor
Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
TRANSISTOR BV3
BV4 pnp
MMBTSB624LT1
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TRANSISTOR BV3
Abstract: No abstract text available
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
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BV4 transistor
Abstract: transistor BV4
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
transistor BV4
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TRANSISTOR BV3
Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
BV4 transistor
BV4 pnp
bv-1
transistor bV2
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D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
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2SB624A
2SD596A
D1802
TRANSISTOR BV3
2SB624A
nec marking power amplifier
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2SB624
Abstract: 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
2SB624
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sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
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sot-23 bv2
Abstract: marking BV4 2SB624
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
sot-23 bv2
marking BV4
2SB624
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hFE-200 transistor PNP
Abstract: 2SB624
Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SB624
OT-23
OT-23
-100mA)
2SD596.
-700mA
-70mA
-10mA
-100A,
hFE-200 transistor PNP
2SB624
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
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BV4 pnp
Abstract: BV4 transistor 2SB624 2SD596
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
BV4 pnp
BV4 transistor
2SB624
2SD596
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2SB624
Abstract: 2SD596 BV4 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SB624
OT-23-3L
-100mA)
2SD596.
-100mA
-700mA
-700mA,
-70mA
-10mA
2SB624
2SD596
BV4 transistor
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Bv4 smd transistor
Abstract: TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
9001Certified
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
TRANSISTOR SMD BV4
MARKING SMD PNP TRANSISTOR BV5
Bv3 smd transistor
smd transistor bv4
MARKING SMD PNP TRANSISTOR BV
TRANSISTOR SMD BV
CSB624
TRANSISTOR BV3
SMD TRANSISTOR BV5
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2SB624
Abstract: BV4 transistor marking BV4 transistor bv5
Text: 2SB624 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35
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2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
2SB624
BV4 transistor
marking BV4
transistor bv5
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2SB624
Abstract: TRANSISTOR BV3 BV4 transistor
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
2SB624
TRANSISTOR BV3
BV4 transistor
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hFE-200 transistor PNP
Abstract: TRANSISTOR BV3
Text: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SB624
OT-23-3L
OT-23-3L
-100mA)
2SD596.
-700mA
-700mA,
-70mA
-10mA
hFE-200 transistor PNP
TRANSISTOR BV3
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2N3506
Abstract: 2N3507 2N3506JTX 2N3506 MOTOROLA 2N3507JTX 2NW06 15-ADO
Text: MOTOROU Orderthis dooument bv2N850WWD SEMICONDUCTOR TECHNICAL DATA 2N3506JTX, JTXV 2N3507JTX, JTXV Processed per MIL+-~9500/349 NPN Silicon Small+ ignal Transistors . . designed for genera~urpose switchingapplications. .,. ,. CASE 7W TM05AD r- mntinued)
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bv2N850WWD
2N3506JTX,
2N3507JTX,
TM05AD
2NW06
2NW07
300Vdc)
2N3506
1PHW41011-2
2NS50MWD
2N3506
2N3507
2N3506JTX
2N3506 MOTOROLA
2N3507JTX
15-ADO
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H7ET-BM
Abstract: H7ET-FBV H7ET-BVM H7ET-FBV2 H7ET-FBV1 H7ET-b commutateur fixation H7ET-B1 H7ET-B2
Text: IH7ET COMPTEUR HORAIRE SUBMINIATURE Compteur horaire subminiature fonctionnant sans alimentation externe Dimensions très réduites 48 x 24mm, normes DIN . Haute immunité aux parasites. Cosses de raccordement à vis ou pour connexion rapide. Affichage du temps cumulé, par comptage des
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2SB624
Abstract: 2SD596
Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom in millimeters 2.8 + 0.2
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2SB624
2SB624
2SD596
NECTOKJ22686
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2SB624
Abstract: No abstract text available
Text: SEC / ELECTRON DEVICE SILICON TRANSISTOR 2SB624 / AUDIO FREQUENCY POWER AMPLIFIER PIMP SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E SC R IPTIO N PACK AG E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom mended fo r hybrid integrated circuit and other applications.
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2SB624
2SB624
2SD596
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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2S8624
Abstract: BV4 transistor
Text: 2 S B 6 2 4 .2 S B 6 2 4 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor • C o m p lim e n ta ry to 2 S D 5 9 6 , 2 S D 5 9 6 R P A C K A G E D IM E N S IO N S • High D C C u rre n t G ain: h FE = 2 0 0 T Y P . V CE = - 1 .0 V , lc !
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2SB624,
2SB624R
-100m
2SB624
2S8624
BV4 transistor
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