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    TRANSISTOR BV5 Search Results

    TRANSISTOR BV5 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR BV5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BV4 transistor

    Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
    Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624LT1 OT-23 100mA 700mA 700mA, PW350 BV4 transistor TRANSISTOR BV3 BV4 pnp MMBTSB624LT1

    TRANSISTOR BV3

    Abstract: No abstract text available
    Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624 OT-23 100mA 700mA 700mA, TRANSISTOR BV3

    BV4 transistor

    Abstract: transistor BV4
    Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624LT1 OT-23 100mA 700mA 700mA, PW350 BV4 transistor transistor BV4

    TRANSISTOR BV3

    Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
    Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.


    Original     		PDF MMBTSB624 OT-23 100mA 700mA 700mA, TRANSISTOR BV3 BV4 transistor BV4 pnp bv-1 transistor bV2

    D1802

    Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
    Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)


    Original     		PDF 2SB624A 2SD596A D1802 TRANSISTOR BV3 2SB624A nec marking power amplifier

    2SB624

    Abstract: 2SD596
    Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.


    Original     		PDF 2SB624 OT-23 The2SB624 -100mA) 2SD596 2SB624

    sot-23 bv2

    Abstract: 2SB624 2SD596
    Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.


    Original     		PDF 2SB624 OT-23 The2SB624 -100mA) 2SD596 sot-23 bv2 2SB624

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624

    sot-23 bv4

    Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


    Original     		PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4

    sot-23 bv2

    Abstract: marking BV4 2SB624
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA sot-23 bv2 marking BV4 2SB624

    hFE-200 transistor PNP

    Abstract: 2SB624
    Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features — High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SB624 OT-23 OT-23 -100mA) 2SD596. -700mA -70mA -10mA -100A, hFE-200 transistor PNP 2SB624

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA

    BV4 pnp

    Abstract: BV4 transistor 2SB624 2SD596
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 2SB624 OT-23 -100mA) 2SD596. -100mA -700mA -70mA -10mA BV4 pnp BV4 transistor 2SB624 2SD596

    2SB624

    Abstract: 2SD596 BV4 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA) 2SD596. -100mA -700mA -700mA, -70mA -10mA 2SB624 2SD596 BV4 transistor

    Bv4 smd transistor

    Abstract: TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and


    Original     		PDF ISO/TS16949 9001Certified CSB624 OT-23 CSD596 C-120 CSB624Rev 160803E Bv4 smd transistor TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5

    2SB624

    Abstract: BV4 transistor marking BV4 transistor bv5
    Text: 2SB624 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35


    Original     		PDF 2SB624 OT-23-3L -100mA -700mA -70mA -10mA 2SB624 BV4 transistor marking BV4 transistor bv5

    2SB624

    Abstract: TRANSISTOR BV3 BV4 transistor
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage


    Original     		PDF OT-23-3L 2SB624 OT-23-3L -100mA -700mA -70mA -10mA 2SB624 TRANSISTOR BV3 BV4 transistor

    hFE-200 transistor PNP

    Abstract: TRANSISTOR BV3
    Text: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features — — 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF 2SB624 OT-23-3L OT-23-3L -100mA) 2SD596. -700mA -700mA, -70mA -10mA hFE-200 transistor PNP TRANSISTOR BV3

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    D1802

    Abstract: marking BV4 2SB624A 2SD596A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SB624

    Abstract: 2SD596
    Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom­ in millimeters 2.8 + 0.2


    OCR Scan     		PDF 2SB624 2SB624 2SD596 NECTOKJ22686

    2SB624

    Abstract: No abstract text available
    Text: SEC / ELECTRON DEVICE SILICON TRANSISTOR 2SB624 / AUDIO FREQUENCY POWER AMPLIFIER PIMP SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E SC R IPTIO N PACK AG E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom­ mended fo r hybrid integrated circuit and other applications.


    OCR Scan     		PDF 2SB624 2SB624 2SD596

    2S8624

    Abstract: BV4 transistor
    Text: 2 S B 6 2 4 .2 S B 6 2 4 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor • C o m p lim e n ta ry to 2 S D 5 9 6 , 2 S D 5 9 6 R P A C K A G E D IM E N S IO N S • High D C C u rre n t G ain: h FE = 2 0 0 T Y P . V CE = - 1 .0 V , lc !


    OCR Scan     		PDF 2SB624, 2SB624R -100m 2SB624 2S8624 BV4 transistor