AVF100
Abstract: ASI10569
Text: AVF100 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVF100 is a high power Class-C transistor designed for IFF/DME/TACAN Applications in 1025-1150 MHz. A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES: • 50 V operation
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AVF100
AVF100
ASI10569
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234 8715
Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are
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HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
234 8715
Ic 9430
HFA3046
HFA3046B
HFA3096
HFA3096B
HFA3127B
HFA3128B
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AVD035P
Abstract: TACAN TACAN 41 ASI10559
Text: AVD035P NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI AVD035P is a medium power Class C transistor for pulsed LBand avionics, DME/TACAN Applications. A C .100x45° C B FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1150 MHz
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AVD035P
AVD035P
100x45°
ASI10559
TACAN
TACAN 41
ASI10559
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BC849LT1
Abstract: No abstract text available
Text: BC859LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the BC849LT1 is recommended. NPN transistor SOT-23 Plastic Package
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BC859LT1
BC849LT1
OT-23
120Hz
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BC849
Abstract: BC859
Text: BC859 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the NPN transistor BC849 is recommended. SOT-23 Plastic Package
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BC859
BC849
OT-23
120Hz
BC859
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CA3096
Abstract: 40841 40841 dual gate mosfet CA3096AE CA3096E npn transistors,pnp transistors T2300B CA3096A CA3096AM CA3096AM96
Text: CA3096, CA3096A, CA3096C S E M I C O N D U C T O R NPN/PNP Transistor Arrays December 1997 Applications Description • Five-Independent Transistors The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of
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CA3096,
CA3096A,
CA3096C
CA3096C,
CA3096A
CA3096C
CA3096
40841
40841 dual gate mosfet
CA3096AE
CA3096E
npn transistors,pnp transistors
T2300B
CA3096AM
CA3096AM96
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BC849LT1
Abstract: No abstract text available
Text: BC859LT1 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups A, B and C, according to its DC current gain. As complementary type the BC849LT1 is recommended. NPN transistor SOT-23 Plastic Package
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BC859LT1
BC849LT1
OT-23
120Hz
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ic 245
Abstract: TACAN ASI10558 AVD035F DSA0029008 724G
Text: AVD035F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG B The ASI AVD035F is a medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. A .100 X 45° ØD C B E FEATURES: F G H • Class C Operation • PG = 10 dB at 35 W/1150 MHz
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AVD035F
AVD035F
ASI10558
ic 245
TACAN
ASI10558
DSA0029008
724G
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V 7271 U
Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on
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HFA3102
10GHz
HFA3102
10GHz)
V 7271 U
421506
4948 transistor bf
IC 7555 datasheet
7555 harris
Dual Long-Tailed Pair Transistor Array
NE 7555
T 3108 001
TOP 100-124
500E
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MSC81035M
Abstract: TACAN TACAN 41
Text: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:
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MSC81035M
MSC81035M
TACAN
TACAN 41
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285-1 MAG IC
Abstract: C 2851 transistor c 3198 transistor 1348 transistor Transistor 168 TRANSISTOR C 2570 IC 4073 B15V18008 c 2570 transistor
Text: BIPOLARICS, INC. Part Number B15V18008 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V18008 is a high performance silicon bipolar transistor intended for power linear and Class C applications
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B15V18008
B15V18008
285-1 MAG IC
C 2851 transistor
c 3198 transistor
1348 transistor
Transistor 168
TRANSISTOR C 2570
IC 4073
c 2570 transistor
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BR 9014
Abstract: BR 9014 transistor ST 9014 C BR 9014 c C 9014 transistor BR 9014 C TRANSISTOR V. 9014 c transistor 9014 C npn 9014 TRANSISTOR c 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014
Abstract: BR 9014 transistor 9014 C 9014 transistor transistor 9014 npn TRANSISTOR c 9014 ST 9014 C BR 9014 c V. 9014 c transistor 9014 C npn
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014
Abstract: BR 9014 transistor BR 9014 C ST 9014 C C 9014 transistor st 9014 TRANSISTOR c 9014 TRANSISTOR 9014 V. 9014 c 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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BR 9014 transistor
Abstract: BR 9014 TRANSISTOR 9014 C 9014 transistor ST 9014 C BR 9014 C 9014 TRANSISTOR c 9014 st 9014 NPN 9014
Text: ST 9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the PNP transistor ST 9015 is recommended. On special request, these transistors can be
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kf 8715
Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
390nH
825MHz
900MHz
75MHz
76MHz
kf 8715
fiber optic FM Modulator
gilbert cell sum
RF TRANSISTOR 10GHZ
FM Modulator 2GHz
rf digital modulators ic
50E08
stub tuner matching
500E
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AN5296 application note
Abstract: "Application of the CA3018" an5296 AN5296 Application note CA3018 CA3086 Harris CA3018 Harris CA3086 NPN Monolithic Transistor Pair AN5296 Application of the CA3018 harris 3086
Text: CA3086 S E M I C O N D U C T O R General Purpose NPN Transistor Array November 1996 Applications Description • Three Isolated Transistors and One Differentially Connected Transistor Pair For Low-Power Applications from DC to 120MHz The CA3086 consists of five general-purpose silicon NPN
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CA3086
120MHz
CA3086
190MHz
AN5296
CA3018
1-800-4-HARRIS
AN5296 application note
"Application of the CA3018"
an5296
AN5296 Application note CA3018
Harris CA3018
Harris CA3086
NPN Monolithic Transistor Pair
AN5296 Application of the CA3018
harris 3086
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TRANSISTOR zo 109 ma
Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor
Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C
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B15V140
B15V140
OT-223
OT-103
TRANSISTOR zo 109 ma
transistor zo 109
transistor 86
IC 7585
midium power uhf transistor
microwave transistor
ZO 109 transistor
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PH1012
Abstract: No abstract text available
Text: y H fe C O H Coming Attractions M a r t A M P com pany Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 V1.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor C om m on Base C onfiguration Broadband Class C O peration
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PH1012-70
PH1012
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transistor NEC D 822 P
Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters
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2SC4226
2SC4226
SC-70
2SC4226-T1
2SC4226-T2
transistor NEC D 822 P
transistor number D 2498
702 mini transistor
NEC D 822 P
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Untitled
Abstract: No abstract text available
Text: J U fa i Coming Attractions M a n A M P ci o m p a n y Avionics Puised Power Transistor, 282W, TACAN Format 1025 -1150 MHz PH1012-282 Features • • • • • • • • NPN Silicon Microwave Power Transistor Com m on Base C onfiguration B roadband Class C O peration
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PH1012-282
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E67349
Abstract: TLP630
Text: TO SH IBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm A C/D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode
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TLP630
TLP630
5000Vrms
UL1577
E67349
11-7A8
E67349
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSB810 AUDIO FREQUENCY AMPLIFIER TO -92S • C om plem ent to KSD 1020 ABSOLUTE MAXIMUM RATING TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent (DC)
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KSB810
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transistor NEC D 582
Abstract: AN 7591 POWER AMPLIFIER Nec b 616 an 7591
Text: DATA SHEET SILICON TRANSISTOR 2SC3583 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR D ES C R IP TIO N The 2SC3583 is an NPN epitaxial silicon transistor designed for use in PACKAGE DIMENSIONS low-noise and small signal amplifiers from VHF band to UHF band. Low-
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2SC3583
2SC3583
transistor NEC D 582
AN 7591 POWER AMPLIFIER
Nec b 616
an 7591
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