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    TRANSISTOR C 109 Search Results

    TRANSISTOR C 109 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 109 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ASI10573

    Abstract: AVF350
    Text: AVF350 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .400 2NL FLG DESCRIPTION: A .0 2 5 x 4 5 ° The ASI AVF350 is a high power Class C transistor, designed for Avionics Applications in 1030-1090 MHz. ØD C E F G FEATURES: H • Internal Input/Output Matching Networks


    Original     		PDF AVF350 AVF350 ASI10573 ASI10573

    234 8715

    Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B

    HFA3046

    Abstract: NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127 HFA3127B HFA3128
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 NPN Monolithic Transistor Pair HFA3046B HFA3046Y HFA3096 HFA3096B HFA3096Y HFA3127B

    transistor 224-1 base collector emitter

    Abstract: transistor 0588
    Text: SILICON TRANSISTOR NE461M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C DESCRIPTION 0.42 ±0.06 0.42 ±0.06 0.25±0.02 3.0 PIN CONNECTIONS E: Emitter C: Collector


    Original     		PDF NE461M02 OT-89 NE461M02 24-Hour transistor 224-1 base collector emitter transistor 0588

    HFA3046

    Abstract: TYPE 85.54 542E02 542E-02
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays March 1998 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TYPE 85.54 542E02 542E-02

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB2856S250 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT Pulsed Medical Transistor Class C Operation − High Efficiency The high power pulsed transistor part number IB2856S250 is designed to operate in class C mode. This common base


    Original     		PDF IB2856S250 IB2856S250 IB2856S250-REV-NC-DS-REV-NC

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M10 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M10 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M10 IB1011M10 IB1011M10-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011L110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L110 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011L110 IB1011L110 IB1011L110-REV-NC-DS-REV-B

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011L15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L15 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011L15 IB1011L15 IB1011L15-REV-NC-DS-REV-B

    Bd 585 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011L220 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L220 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011L220 IB1011L220 IB1011L220-REV-PR1-DS-REV-NC Bd 585 transistor

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011M140 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011M140 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011M140 IB1011M140 IB1011M140-REV-NC-DS-REV-NC

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB1011L40 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor part number IB1011L40 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.


    Original     		PDF IB1011L40 IB1011L40 IB1011L40-REV-NC-DS-REV-D

    V 7271 U

    Abstract: 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E
    Text: HFA3102 S E M I C O N D U C T O R Dual Long-Tailed Pair Transistor Array August 1994 Features Description • High Gain-Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on


    Original     		PDF HFA3102 10GHz HFA3102 10GHz) V 7271 U 421506 4948 transistor bf IC 7555 datasheet 7555 harris Dual Long-Tailed Pair Transistor Array NE 7555 T 3108 001 TOP 100-124 500E

    Untitled

    Abstract: No abstract text available
    Text: an A M P company Avionics Pulsed Power Transistor, 350W, 250ns Pulse, 10% Duty 1030 -1090 MHz PH1090-350L V2.00 Features • • • • • • • • NPN Silicon Microwave Pow er Transistor C om m on Base Configuration Broadband Class C O peration High Efficiency Interdigitated G eom etry


    OCR Scan     		PDF 250ns PH1090-350L

    transistor mpsu45

    Abstract: MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor
    Text: MPS-U45 SILICON NPN SILICON DARLINGTON TRANSISTOR NPN SILICON DARLINGTON AMPLIFIER TRANSISTOR . . designed fo r a m plifier and driver applications. • High DC C urrent Gain hpE = 25,000 (Min) @ l c = 200 mAdc 15,000 (Min) @ lc = 500 mAdc • C ollector-E m itter Breakdown Voltage —


    OCR Scan     		PDF MPS-U45 MPS-U95 01-MPS-AI3IDARLINGT0NI MPS-A70 MPS-A20 Q4-MPS-U45 transistor mpsu45 MPSU45 MPS-U45 MPSU95 TRANSISTOR 2SC Audio Amplifier Applications MPS-U95 MPSU-45 MPSU45 transistor Darlington pair IC with 15 Amp mps a70 pnp transistor

    PH1012

    Abstract: No abstract text available
    Text: y H fe C O H Coming Attractions M a r t A M P com pany Avionics Pulsed Power Transistor, 70W, TACAN Format 1025-1150 MHz PH1012-70 V1.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor C om m on Base C onfiguration Broadband Class C O peration


    OCR Scan     		PDF PH1012-70 PH1012

    MJ12005

    Abstract: MJ12005 MOTOROLA MR918 4229P-L00-3C8 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918
    Text: MOTOROLA SC XSTRS/R F 15E D I L3t?aSM QOflSQTS 7 | MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA 8 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR . . . s p e c ific a lly designed fo r use in d e fle c tio n c irc u its . • V c E X = 1500 V


    OCR Scan     		PDF MR918 4229P-L00-3C8 MJ12005 MJ12005 MOTOROLA MR918 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09

    Untitled

    Abstract: No abstract text available
    Text: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    OCR Scan     		PDF 1090-80L

    Untitled

    Abstract: No abstract text available
    Text: Avionics Pulsed Power Transistor PH1090-800S Preliminary 800 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF PH1090-800S 5b42E05

    yb 0d

    Abstract: No abstract text available
    Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-400S yb 0d

    Untitled

    Abstract: No abstract text available
    Text: A$A Avionics Pulsed Power Transistor PH 1090-30S Preliminary 30 Watts, 1030-1090 MHz, 10 |is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-30S 5b422G5 GQG12D5

    Untitled

    Abstract: No abstract text available
    Text: A/jÙi Avionics Pulsed Power Transistor PH 1090-75S Preliminary 75 Watts, 1030-1090 MHz, 10 is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation


    OCR Scan     		PDF 1090-75S b42205