TRANSISTOR C 1177 Search Results

TRANSISTOR C 1177 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR C 1177 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
transistor bfw16a Abstract: transistors BFW16A vk200 philips BFW16A bfw16a philips bfw16a philips semiconductor ic 1014b vk200 Text: Philips Sem iconductors bbsa'm Product specification 003212'ì STO • APX NPN 1 GHz wideband transistor BFW16A N AMER P H ILIP S /D IS C R E T E DESCRIPTION t^ E PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.	OCR Scan	bbS3T31 BFW16A bb53T31 D03B131 BFW16A transistor bfw16a transistors BFW16A vk200 philips bfw16a philips bfw16a philips semiconductor ic 1014b vk200	PDF
PH11 SOT23 Abstract: BFS17 TRANSISTOR C 1177 Text: • ^53^31 00252Sb 2 83 H A P X Philips Sem iconductors Product specification N AMER PHILIPS/DISCRETE b?E NPN 1 GHz wideband transistor DESCRIPTION c BFS17 PINNING NPN transistor In a plastic SOT23 envelope. It is intended for a wide range of RF applications, such as mixers and	OCR Scan	00252Sb BFS17 MEA393 MEA397 PH11 SOT23 BFS17 TRANSISTOR C 1177	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N930. NPN Silicon Small-Signal Transistor CR Y S TA IO N C S 2805 veterww Highway Veterans Hij Suite 14 designad for low power amplifier applications. Ronkonkoma, N.Y. 11778 MAXIMUM RATINGS Symbol Valu« Collector-Emitter Voltage	OCR Scan	2N930.	PDF
Untitled Abstract: No abstract text available Text: 2N918JAN, JTX, JTXV, JA N S processed per M IL-S-19500/301 NPN Silicon Small-Signal Transistor C R YSTA IO N C S 2805 Veterans Highway Suite 14 Ronkonkoma. N Y . 11779 de^Ç'ieO lor uRta hiof fr«quncy ampi.fier dKxcationE M AXIM UM R A T IN G S AatkftQ Coi«cl X E m * V04UQ«	OCR Scan	2N918JAN, IL-S-19500/301 V04UQ«	PDF
Untitled Abstract: No abstract text available Text: SEMICONDUCTOR TECHNICAL DATA 2N4405* PNP Silicon Small-Signal Transistor c k y s t a io n c s 2805 Veterans Hiahwav d e s i g n e d fo r g e n e r a l- p u r p o s e s w it c h in g a n d a m p lif ie r a p p lic a t io n s . S u / f 74 Ronkorkoma, N.Y. 1177u	OCR Scan	2N4405* 1177u	PDF
2N2605 Abstract: transistor t1W Text: SEMICONDUCTOR TECHNICAL DATA s 2N2605JAN, JTX, JTXV, JANS Processed per MlL-S-19500/354 PNP Silicon Small-Signal Transistor < M g n « lor f l M . v - p u w . c h y s t a io n c s <* a p p .^ t . o n , 2805 Veteran* Highway Suite u Ronkorkena NY 11778 [ m a x im u m r a t in g s	OCR Scan	2N2605JAN, MlL-S-19500/354 fetir111 2N2605 transistor t1W	PDF
2N4854 Abstract: No abstract text available Text: 2N4854 CRYSTALONCS Complementary Dual Sm all-Signal Transistor " * * * Rnnkonkoma n .y . 11779 M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage V C EO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Collector 1 to Collector 2 Voltage VC1C2 ±120	OCR Scan	2N4854 2N4854	PDF
2N6987 Abstract: 2N6887 Text: 2N6987 2N6988 ? CRYSTALO NCS 2805 Veterans Highway suite 14 Ronkonkoma. N.Y. 11779 Multiple Quad PNP Silicon Small-Signal Transistors . designed for general-purpose switching circuits and D C to V H F amplifier applications Similar to 2 N 2 90 7 A individual transistor specifications. Complementary devices available	OCR Scan	2N6987 2N6988 2N6989/90) 2N6988 O-116) 2N6887 2N6987, 2N6887	PDF
2SK462 Abstract: 53-AS M71E Text: NEC j N ^ 1 -^ ^ ' ^ ' 7 y — M O S ? - > F E T ? m oLm m N-Channel MOS Field Effect Power Transistor Switching Industrial Use Afflili]/PA C K A G E DIMENSIONS 2S K462Ü , Unit : mm FETT-, * 7 f > D C - D C 3 V '* — ? , w m v m t i r n à * ¿6 , ¡ÎJS ÎÆ	OCR Scan	2SK462 2SK462Ã CycleSi50 2SK462 53-AS M71E	PDF
2SK659 Abstract: TC-6071 Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #	OCR Scan	2SK659 2SK659Ã 2SK659 TC-6071	PDF
JIDC Abstract: No abstract text available Text: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S	OCR Scan	2N930JAN, MIL-S-19500/253 -65IO200 JIDC	PDF
2SA1462 Abstract: JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor Text: NEC i m=ïTivfx A Silicon Transistor 2SA1462 P N P i b " ^ + '> 7 J U M '> ' n > b ^ > ' > * 9 PN P Silicon Epitaxial Transistor High Speed Switching ^ S / P A C K A G E D IM EN SIO N S #ë/FEA TU RES O X - í v f > / 'iÈ ÎÉ Â 'j iË ^ o Unit : mm) ton : 9.0 ns T Y P . , t stg : 16 ns T Y P . ,	OCR Scan	2SA1462 o2SC3735 2SA1462 JE 33 TRANSISTOR BO 346 J-10 T108 T460 3111R GM0B JE 800 transistor	PDF

stk 2155 Abstract: stk 490 110 2SC3733 transistor NPN 2sc3733 2SA1460 N50M 2sa1460-t Text: NEC i '> V = 3 > Silicon Tran sisto r 2S C 3 7 3 3 N P N J it x i f f l N PN Silicon Epitaxial Transistor High Speed S w itch in g , High Frequency A m plifier Industrial Use ^ H I/P A C K A G E D IM E N S IO N S 4 # * / FEATURES o ^ : i5 r L < 7 \|iiii X 'f	OCR Scan	2SA1460 stk 2155 stk 490 110 2SC3733 transistor NPN 2sc3733 N50M 2sa1460-t	PDF
2N1050A Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049 Text: MIL I C \| 000D12S DDDaDfl? T \| SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A	OCR Scan	000D12S MIL-S-l9500/176B MIL-S-19500/176A 2N1047A, 2N1048A, 2N1049A 2N1050A 2N1047A 2N1048A 2N1050A T 3036 2n1048 2N1049	PDF
3e tRANSISTOR Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor Text: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,	OCR Scan	2SK446 SK446Ã Tstg64 0734i28- 075J22 26-/E 3e tRANSISTOR TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor	PDF
ic ntp- 3000 Abstract: IIH13 Scans-0088096 Text: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o	OCR Scan	IEI-620) PWS10 TC-6083A ic ntp- 3000 IIH13 Scans-0088096	PDF
3n108 Abstract: transistor 3N108 Text: I I 3N108 3N109 3N110 3N111 HIG H V O L T A G E S IL IC O N E P IT A X IA L J U N C T IO N INTEGRATED CHOPPER TRANSISTOR • L O W LEAKAGE • L O W C eb • L O W rEE sat • H IG H V EE & V EB ELECTRICAL DATA ABSOLUTE MAXIMUM RATING _ p a r a m e t e r _	OCR Scan	3N108 3N109 3N110 3N111 transistor 3N108	PDF
2SK1132 Abstract: TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B Text: MO M O S Field Effect Transistor MOS F E T 2SJ165 {i P • mm F E T T & 9, Ü X >f -y f - > ^ " r 'X ^ f X h L T H i t T - t c # tc , ± 0 :2 J V T R ^ ^ - f 'V F7 > y X ^ => 6‘ • x - i17 f £ - H i â ' C i '0 4-*•■■ < £> & o m 0.42 z s o & A ti4	OCR Scan	2SJ165 2SK1132 TRANSISTOR DG S-10 ifr 641 2SJ165 TC-7517B	PDF
2SA1177 Abstract: I00MH 851G 8511 Text: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .	OCR Scan	2SA1177 30MHz 100MHz I00MH 851G 8511	PDF
2SA1177 Abstract: No abstract text available Text: Ordering number:EN 851G _ 2SA1177 PNP Epitaxial Planar Silicon Transistor N0.851G HF Amp Applications Use . I d e a l l y s u i t e d f o r u s e i n FM RF a m p l i f i e r s , m i x e r s , o s c i l l a t o r s , c o n v e r t e r s , IF a m p l i f i e r s .	OCR Scan	2SA1177 30MHz	PDF
HT - 0886 Abstract: HT 0886 g3je ht 9366 MARKING LE50 T108 Text: NEC 1 î ^>— 57 . Ì / — h C om pound Transistor / \ 1 ' 7 t «F GN1A3Q & ^ •^ H ! W Ì o'<j tx m /L £ ftB itr o tte ( Ri = 1 .0 k û , 2.1 ±0.1 1.25 + 0.1 R 2 = 10 kQ O G A 1A 3Q £ 3 > r i) / > ? ') T îû tm T ' ë i t (T a = m z îv JX. ; 2	OCR Scan	PWS10 CycleS50 HT - 0886 HT 0886 g3je ht 9366 MARKING LE50 T108	PDF
la 5531 Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83 Text: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£	OCR Scan	PWS10 la 5531 TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83	PDF

TRANSISTOR C 1177 Search Results

TRANSISTOR C 1177 Result Highlights (5)

TRANSISTOR C 1177 Datasheets Context Search

2N2222A 338

y51 h 120c

transistor bfw16a

PH11 SOT23

Untitled

Untitled

Untitled

2N2605

2N4854

2N6987

2SK462

2SK659

JIDC

2SA1462

stk 2155

2N1050A

3e tRANSISTOR

ic ntp- 3000

3n108

2SK1132

2SA1177

2SA1177

HT - 0886

la 5531