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    TRANSISTOR C 2001 Search Results

    TRANSISTOR C 2001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C 2001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KTA701E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA701E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 6 2 5 3 4 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.


    Original     		PDF KTA701E KTA701E

    KTA501E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA501E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.


    Original     		PDF KTA501E KTA501E

    KTC601E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTC601E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES C A ᴌHigh pairing property in hFE. 1 2 DIM A 5 A1 ᴌExcellent temperature response between these 2 transistor. C ᴌA super-minimold package houses 2 transistor.


    Original     		PDF KTC601E KTC601E

    100 watt transistor

    Abstract: No abstract text available
    Text: 2001 1.0 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 2000 MHz. Gold Metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor


    Original     		PDF 55BT-1, 100 watt transistor

    transistor s11 s12 s21 s22

    Abstract: NE856M02-T1-AZ NE856M02
    Text: SILICON TRANSISTOR NE856M02 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE OUTLINE M02 BOTTOM VIEW 4.5±0.1 1.6±0.2 C E B E 0.8 MIN DESCRIPTION The NE856M02 is an NPN silicon epitaxial bipolar transistor


    Original     		PDF OT-89 NE856M02 NE856M02 transistor s11 s12 s21 s22 NE856M02-T1-AZ

    an5296

    Abstract: AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 FN532 CA30
    Text: CA3146, CA3146A, CA3183, CA3183A T O DU C T TE PR E O DU C L R O P S E T OB U 3 BSTIT , CData 308Sheet LE SU 86 A POSSIB 3046, CA30 CA May 2001 FN532.6 High-Voltage Transistor Arrays Features The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage silicon NPN transistor arrays on a


    Original     		PDF CA3146, CA3146A, CA3183, CA3183A FN532 CA3183A, CA3183 CA3146A an5296 AN5296 application note AN5296 Application note CA3018 AN5296 Application of the CA3018 AN5296 Application of the CA3018 Integrated CA3018 emitter area of CA3083 CA3146 CA30

    sot 23 mark AD

    Abstract: BCW60A BCW60B BCW60C BCW60D
    Text: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage


    Original     		PDF BCW60A/B/C/D OT-23 sot 23 mark AD BCW60A BCW60B BCW60C BCW60D

    Analog devices TOP marking Information

    Abstract: marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23
    Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO


    Original     		PDF BCW61A/B/C/D OT-23 KST5086 OT-23 BCW61AMTF Analog devices TOP marking Information marking B22 sot-23 BCW61A transistor cross ref fairchild sot-23 Device Marking pc Cross Reference sot23 BC TRANSISTOR SOT-23

    marking B22 sot-23

    Abstract: bc 2001 transistor BCW61A BCW61B BCW61C BCW61D KST5086
    Text: BCW61A/B/C/D BCW61A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -32 Units V VCEO


    Original     		PDF BCW61A/B/C/D OT-23 KST5086 marking B22 sot-23 bc 2001 transistor BCW61A BCW61B BCW61C BCW61D

    FZT491A

    Abstract: FZT591A transistor marking 2A H DSA003675
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE sat = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF OT223 FZT591A FZT491A -100mA -500mA -20mA* -100mA* -50mA* FZT491A FZT591A transistor marking 2A H DSA003675

    FMMTA92

    Abstract: BF620 BF621
    Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF621 ISSUE 3 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltage APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE – BF620 C E C


    Original     		PDF BF621 BF620 -200V, -30mA, -10mA, 100MHz FMMTA92 BF620 BF621

    Untitled

    Abstract: No abstract text available
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO


    Original     		PDF BSR33 BSR43 Bre15mA* -500mA, -50mA* -150mA, -15mA* -100mA,

    BSR33

    Abstract: BSR43
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BSR33 ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSR43 PARTMARKING DETAILS – BR4 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO


    Original     		PDF BSR33 BSR43 Vo15mA* -500mA, -50mA* -150mA, -15mA* -100mA, BSR33 BSR43

    BCX5316

    Abstract: BCX5616
    Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5316 ISSUE 4 – MARCH 2001 C COMPLIMENTARY TYPE – BCX5616 PARTMARKING DETAIL – AL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO -100 V Collector-Emitter Voltage


    Original     		PDF BCX5316 BCX5616 -500mA, -50mA* -150mA, -50mA, 100MHz BCX5316 BCX5616

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    2SD1481

    Abstract: DSA00108835
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption


    Original     		PDF 2SD1481 2SD1481 DSA00108835

    Untitled

    Abstract: No abstract text available
    Text: MMPQ3725 MMPQ3725 E B E B E B E C SOIC-16 B C C C C C C C NPN Quad Transistor This device is designed for high current low impedance line driver applications. Sourced from Process 26. Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter


    Original     		PDF MMPQ3725 SOIC-16

    BF620

    Abstract: BF621 FMMTA42
    Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL –


    Original     		PDF BF620 BF621 ELE20 100MHz FMMTA42 BF620 BF621

    BSP32

    Abstract: BSP42 FMMT493
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BSP42 ✪ ISSUE 4 – MARCH 2001 COMPLEMENTARY TYPE – BSP32 PARTMARKING DETAIL – BSP42 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 90 V Collector-Emitter Voltage


    Original     		PDF OT223 BSP42 BSP32 150mA, 500mA, 100mA, BSP32 BSP42 FMMT493

    bcx5316

    Abstract: BCX5616
    Text: SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX5616 ISSUE 5 – MARCH 2001 C COMPLEMENTARY TYPE – BCX5316 PARTMARKING DETAIL – BL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage


    Original     		PDF BCX5616 BCX5316 500mA, 150mA, 100MHz bcx5316 BCX5616

    16 pin diagram of uln 2003

    Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
    Text: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington


    OCR Scan     		PDF 600mA ULN-2001 16 pin diagram of uln 2003 ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001

    E67349

    Abstract: TLP630
    Text: TO SH IBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm A C/D C-IN PU T MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode


    OCR Scan     		PDF TLP630 TLP630 5000Vrms UL1577 E67349 11-7A8 E67349

    2015M

    Abstract: 2015M-2
    Text: 0182998,. ACRI AN, INC 0D D 1414 2015M D ES C R IP TIO N 15 WATTS - 28 VOLTS 2 OHz The 2015M is an internally matched, common base transistor ' capable of providing 15 Watts of C W RF output power across the 1000-2000 M Hz band. This transistor is specifically designed


    OCR Scan     		PDF 2015M 600mA 2015M 2015M-2

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711