TRANSISTOR C 2688 Search Results

TRANSISTOR C 2688 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR C 2688 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
c 2688 nec Abstract: TRANSISTOR 2688 C 2688 video output transistor transistor C 2688 Text: NEC S IL IC O N ELECTRON OEVICE T R A N S IS T O R 2S C 2 6 8 8 NPN SILICON TRIPLE DIFFUSED TRANSISTOR VIDEO OUTPUT TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS The 2SC2688 is designed fo r use in C olor T V chrom a o u tp u t circuits. in m illim e te rs inches	OCR Scan	2SC2688 2300pF) 2300pF c 2688 nec TRANSISTOR 2688 C 2688 video output transistor transistor C 2688	PDF
C2688 Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955 Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature	OCR Scan	TIP2955 TIP3055 t0-218aa 22eoi2 D0370D3 TIP2955 C2688 c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688	PDF
transistor pnp a110 Abstract: free transistor and ic equivalent data transistor pnp a110 EQUIVALENT Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D transistor pnp a110 free transistor and ic equivalent data transistor pnp a110 EQUIVALENT	PDF
BD249C equivalent Abstract: 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D BD249C equivalent 400 watts amplifier circuit diagram 10 amp npn power transistors 1000 watt amplifier AMP contact assembly TO-218 NPN 1.5 AMPS POWER TRANSISTOR pulse transformer 218 free transistor and ic equivalent data 500 watt power circuit diagram	PDF
bd249c equivalent Abstract: C2688 free transistor and ic equivalent data BD249C MJE180 20 L2 Text: BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125	Original	BD249C BD249C/D bd249c equivalent C2688 free transistor and ic equivalent data BD249C MJE180 20 L2	PDF
bd249c equivalent Abstract: c2688 c2688 transistor tRANSISTOR c2688 BD249C Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	BD249C O-218 BD249C MJE180 C-2688, bd249c equivalent c2688 c2688 transistor tRANSISTOR c2688	PDF
bd249c equivalent Abstract: No abstract text available Text: BD249C NPN High−Power Transistor . . . for general−purpose power amplifier and switching applications. • ESD Ratings: Machine Model, C; > 400 V • Human Body Model, 3B; > 8000 V Epoxy Meets UL 94, V−0 @ 1/8” http://onsemi.com 25 A, 100 V, 125 W	Original	BD249C O-218 BD249C/D bd249c equivalent	PDF
TRANSISTOR 2688 Abstract: CE 2711 2SA1150 2SC2682 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	TV25TÃ 2SA1150 TRANSISTOR 2688 CE 2711 2SC2682	PDF
ATF-26884-STR Abstract: ATF-26884 ATF-26884-TR1 Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz • High Gain: 9.0 dB Typical GSS at 12␣ GHz housed in a cost effective microstrip package. This device is	Original	ATF-26884 ATF-26884 ATF-26884-STR ATF-26884-TR1	PDF
Untitled Abstract: No abstract text available Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator	Original	ATF-26884 ATF-26884 Schottkybarrier-ga-165 5965-8703E	PDF
ST Z0 103 MA Abstract: No abstract text available Text: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging	OCR Scan	ATF-26884 ATF-26884 ST Z0 103 MA	PDF
ATF-26884 Abstract: zo 103 ma ATF-26884-STR ATF-26884-TR1 Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 Features • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz • High Gain: 9.0 dB Typical GSS at 12 GHz housed in a cost effective microstrip package. This device is designed for use in oscillator	Original	ATF-26884 ATF-26884 5965-8703E 5980-0024E zo 103 ma ATF-26884-STR ATF-26884-TR1	PDF
ATF-26884 Abstract: No abstract text available Text: Whn1 H E W L E T T 1HEM PA C K A R D ATF-26884 2-16 GHz General Purpose Gallium Arsenide FET 84 Plastic Package Features • High Im a x : 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz •	OCR Scan	ATF-26884	PDF

TO-253-AA Abstract: Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240 Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 OT-143 D00081-0-9/07 TO-253-AA Small-outline integrated circuit SOT 143 transistor 143 46d1 308 transistor MDV 1-2 kv SOT-143 sot143 transistor transistor C 2240	PDF
ADM6315-31D4ARTZR7 Abstract: ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 ADM6315 D00081-0-12/11 ADM6315-31D4ARTZR7 ADM6315-29D4ART-RL7 branding llv ADM6315-46D3ART transistor F 463 V/65e9 transistor	PDF
transistor TO Outline Dimensions Abstract: transistor d 140 g Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES FUNCTIONAL BLOCK DIAGRAM VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 ADM6315 D00081-0-9/13 transistor TO Outline Dimensions transistor d 140 g	PDF
Untitled Abstract: No abstract text available Text: Data Sheet Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC GND VREF ADM6315 RESET RESET CIRCUITRY MR DEBOUNCE 00081-001 Specified over temperature Low power consumption 5 A typical Precision voltage monitor of voltages from 2.5 V to 5 V	Original	OT-143 ADM6315 ADM811 OT-143 D00081-0-12/11	PDF
transistor C 2240 Abstract: ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143 Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FUNCTIONAL BLOCK DIAGRAM FEATURES VCC GND VREF ADM6315 RESET RESET CIRCUITRY 00081-001 APPLICATIONS Microprocessor systems Controllers Intelligent instruments Automotive systems Safety systems	Original	OT-143 ADM6315 ADM811 ADM6315 C00081-0-4/06 transistor C 2240 ADM6315-44D2ARTZR71 ADM6315-29D2ARTZR71 308 transistor sot143	PDF
SOT-143 Abstract: ADM6315 ADM6315-31D1ART-RL ADM6315-31D1ART-RL7 ADM6315-44D1ART-RL ADM6315-44D1ART-RL7 ADM6315-45D1ART-RL ADM6315-45D1ART-RL7 ADM6315-46D1ART-RL ADM6315-46D1ART-RL7 Text: Open-Drain Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM6315 FEATURES Specified over Temperature Low Power Consumption 5 ␮A Typ Precision Voltage Monitor of Voltages from 2.5 V to 5 V at 100 mV Increments Reset Assertion Down to VCC > 1 V Reset Timeout Periods: 1 ms, 20 ms, 140 ms,	Original	OT-143 ADM6315 ADM811 OT-143 ADM6315 10/01--Data C00081 SOT-143 ADM6315-31D1ART-RL ADM6315-31D1ART-RL7 ADM6315-44D1ART-RL ADM6315-44D1ART-RL7 ADM6315-45D1ART-RL ADM6315-45D1ART-RL7 ADM6315-46D1ART-RL ADM6315-46D1ART-RL7	PDF
2n3055 motorola Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046 Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,	Original	1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046	PDF
TIP36C EQUIVALENT Abstract: transistor tip 36c C 2688 transistor 36c tip 36c transistor tip 35c tip 36c transistor npn tip 5100 TIP35C EQUIVALENT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A Com plem entary Silicon High-Pow er TVanslstors TIP 35B * . . . for general-purpose power amplifier and switching applications. TIP 35C * • • • • PNP 25 A Collector Current Low Leakage Current — IcE O = 1 -0 mA @ 30 and 60 V	OCR Scan	TIP35A TIP35B TIP33C TIP36A TIP36B TIP36C TIP36C EQUIVALENT transistor tip 36c C 2688 transistor 36c tip 36c transistor tip 35c tip 36c transistor npn tip 5100 TIP35C EQUIVALENT	PDF
c2688 transistor Abstract: TIP35C EQUIVALENT transistor tip35c test motorola tRANSISTOR c2688 MJE180 MOTOROLA MJE180 TIP35A TIP35B TIP35C TIP36A Text: MOTOROLA Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • •	Original	TIP35A/D* TIP35A/D c2688 transistor TIP35C EQUIVALENT transistor tip35c test motorola tRANSISTOR c2688 MJE180 MOTOROLA MJE180 TIP35A TIP35B TIP35C TIP36A	PDF
motorola tRANSISTOR c2688 Abstract: c2688 TIP35C EQUIVALENT c2688 transistor TIP35C transistor tip35c motorola tRANSISTOR c2688 MJE180 tip35 TIP35C Text: MOTOROLA Order this document by TIP35A/D SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • •	Original	TIP35A/D TIP35A TIP35B* TIP35C* TIP36A TIP36B* TIP36C* TIP35/D* TIP35/D motorola tRANSISTOR c2688 c2688 TIP35C EQUIVALENT c2688 transistor TIP35C transistor tip35c motorola tRANSISTOR c2688 MJE180 tip35 TIP35C	PDF

TRANSISTOR C 2688 Search Results

TRANSISTOR C 2688 Result Highlights (5)

TRANSISTOR C 2688 Datasheets Context Search

y51 h 120c

c 2688 nec

C2688

transistor pnp a110

BD249C equivalent

bd249c equivalent

bd249c equivalent

bd249c equivalent

TRANSISTOR 2688

ATF-26884-STR

Untitled

ST Z0 103 MA

ATF-26884

ATF-26884

TO-253-AA

ADM6315-31D4ARTZR7

transistor TO Outline Dimensions

Untitled

transistor C 2240

SOT-143

2n3055 motorola

TIP36C EQUIVALENT

c2688 transistor

motorola tRANSISTOR c2688