TRANSISTOR C 5339 Search Results

TRANSISTOR C 5339 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR C 5339 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
JE 800 transistor Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s Text: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )	OCR Scan	uPA76HA JE 800 transistor upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s	PDF
FCK 111 Abstract: SS5100 la 5531 TRANSISTOR BO 346 T108 T46C T-10803 SKs 22 TRANSISTOR marking EP Text: - y - ^ NEC M Com pound Transistor i ï r / v f x & GA1 F4N ^ - f ì & • m m o s < J T X 1& t j i $ : f t M L X ^ t i ' c (R i = 22 k£2, R2 = 47 kQ) c o G N 1 F 4 N t 3 > 7 ° IJ y > 9 'J X i t m T è & 1~c ( T a = 25 °C ) II Marking fê	OCR Scan		PDF
IRG7PH42U-EP Abstract: 124 transistor Text: PD - 96233 IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	IRG7PH42UPbF IRG7PH42U-EP O-247AD IRG7PH42U-EP 124 transistor	PDF
IRG7PH42UPBF Abstract: IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U Text: PD - 96233A IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	6233A IRG7PH42UPbF IRG7PH42U-EP O-247AD IRG7PH42UPBF IRG7PH42U-EP C-150 IGBT 60A 1200V of igbt 1200V 60A IRG7PH42U	PDF
Untitled Abstract: No abstract text available Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD	PDF
irg7ph42upbf Abstract: marking code 5339 Text: PD - 96233B IRG7PH42UPbF IRG7PH42U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient	Original	96233B IRG7PH42UPbF IRG7PH42U-EP O-247AD marking code 5339	PDF
b0958 Abstract: JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246 Text: v—S •S' î a - ê - h ^ Com pound Transistor A N I L4M # ftfó m i t o 7 / M x i £ i / i £ R i = 47 f t j t kQ , L T v ^ R 2= 4 7 ( T O î : mm t o kû) c O A A 1 L 4 M ¿1 =1 > 7 ° U / > ? U - C fë ffl X " £ £ t e ( T a = 25 ° C ) g II a u 9 9	OCR Scan	SC-43B b0958 JE 33 PA33 R054-2 je 340 sis 5511 jl06 A0246	PDF
RM4T Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22 Text: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ	OCR Scan	2SK800 2SK800Ã RM4T r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22	PDF
2SD1518 Abstract: 5AE0 2SD1581 C3052 Text: NEC Aj i i T / v 2 S D 1581 S ilicon T ran sis to r f z N P N Silicon Epitaxial Transistor Audio Frequency P o w e r Am plifier 2SD1581 i, x > 9 "iv 9 J T V * — hFE h £1-7(50,/P A C K A G E D IM E N S IO N S (Unit : m m ) 1&=> u 7 7 & ftlW .)± X \ W J j v x f r 'P t f 'y 't z t b , \& W M W ± .X c n ^	OCR Scan	2SD1581 PU0988 2SD1518 5AE0 2SD1581 C3052	PDF
Untitled Abstract: No abstract text available Text: Compound Transistor G Î£ ÎÆ f* 3 M P N P ^ ft I M 1 L 4 M > ' 3 > : mm) m o A<'f T X IE in; £ faM L T ^ i 1 0 Ri = 47 kQ, R 2= 47 kQ) c B o—V A — Ri —V v \ —' Rs o E OGA1L4M t =? >7° IJ / > 9 U M arking (T a —25 °C ) *1 a v 9 •3 v 9 9	OCR Scan	Ta-25 PWS10	PDF
ni3ti Abstract: LU024 M10258 IS333 k 6115 FK 231 SA 220 UI02 S333 T108 T460 Text: NEC m = f = r i v « r • 7— S • 5 /— h Compound Transistor x FN1L3M it H o ^ 'M M T x f f i i j t i - r t i l L T v ' i t c ¥ f i : mm 2 . 8 ± 0.2 1.5 (R i = 4.7 kQ, R2= 4.7 kQ) O — V v V R O FA1L3M t =1 > 7 °'! / > 7 ') T l Ì f f l T 'è	OCR Scan	PWS10 Cycles50 au99-^ ni3ti LU024 M10258 IS333 k 6115 FK 231 SA 220 UI02 S333 T108 T460	PDF
Transistor BC 227 Abstract: TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177 Text: / 7 s— ^ - 2 / — h N EC i i r / \ f 7 J ^ Com pound Transistor AA1A4M Í A 11Ü # c N P N X '> ij =¡> h 7 V i > X ^ ® a ip - f i : mm o / < ^ T íÉ # l ^ [*l/t L X ^ i i"o (R ! = 10 k ñ , R 2= 10 kQ) o AN1A4M t = J > V i ) S > ÿ i ) X î t m X è £ t o	OCR Scan	Ta-25 CycleS50 Transistor BC 227 TRANSISTOR BC 456 TRANSISTOR BC 413 AA1A4M PA33 T108 transistor BC 247 TRANSISTOR BC 413 b 3ete ATT 1177	PDF
Untitled Abstract: No abstract text available Text: Outdoor-VRp-ILc-15000/30000-5339 ~ 15/30kVA, 400 vac delta,230/400 vac wye Outdoor VRp-ILc Series 203 Precision Voltage Regulator + Isolation Transformer Outdoor International Precision voltage regulator Isolation transformer VRp-ILc Outdoor VRp-ILc models	Original	Outdoor-VRp-ILc-15000/30000-5339 15/30kVA, 400Vdelta 230/400V tdoor-VRp-ILc-15000-30000-5339-2007-02-15	PDF
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original		PDF

TCA160 Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300 Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;	OCR Scan	AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300	PDF
stk*400-050 Abstract: STK400 Text: Ordering number : EN4822A Thick Film Hybrid IC STK400-290 AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be	Original	EN4822A STK400-290 stk*400-050 STK400	PDF
STK401-340 Abstract: STK401-140 stk401-200 STK400-290 stk400 200 STK400-110 STK400-010 STK400-020 STK400-030 STK400-040 Text: Ordering number : EN4822A Thick Film Hybrid IC STK400-290 AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-compatibility to permit a single PCB to be	Original	EN4822A STK400-290 STK401-340 STK401-140 stk401-200 STK400-290 stk400 200 STK400-110 STK400-010 STK400-020 STK400-030 STK400-040	PDF
NKT677 Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128 Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers	OCR Scan	AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128	PDF
Germanium drift transistor Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of	OCR Scan	orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor	PDF
Untitled Abstract: No abstract text available Text: Ordering number : EN4822A Thick Film Hybrid 1C _ STK400-290 IsaH yo I AF Power Amplifier Split Power Supply (50W + 50W + 50W min, THD = 0.08%) Package Dimensions Overview N ow , thick-film audio pow er am plifier ICs are available	OCR Scan	EN4822A STK400-290 STK400-290] 40cIB 40riR i20i2* J32i36S 0GE113T	PDF
2n5339 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F 13E D \| L3L7254 0084542 1 \| 2N5336 thru 2N5339 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MEDIUM-POWER NPN SILICON TRANSISTORS 5 AM PERE POWER TRANSISTORS NPN SILICON . . . designed for switching and wide band amplifiar applications. • Low Collector-Emitter Saturation Voltage —	OCR Scan	L3L7254 O-205AD 2N6190 2N6193 2N5336 2N5337 2N5336 2N5339 2n5339	PDF
stk470 090 Abstract: stk 490 070 4822a stk 490 040 stk0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130 Text: Ordering number : EN4022A Thick Film Hybrid 1C STK400-290 No. 4822A AF Power Amplifier Split Power Supply (50 W + 50 W + 50W min, THD = 0.08%) I Package Dimensions Overview Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be	OCR Scan	EN4022A STK400-290 4086ility stk470 090 stk 490 070 4822a stk 490 040 stk0460 Sanyo STK 098 stk 490 -110 STK 290 010 stk 490 110 stk*401-130	PDF
LT 5337 Abstract: 2N5339 2N6193, Motorola LN 7904 2N5336 2n5337 2n5338 NS338 Text: MOTOROL A SC XSTR S/ R F 1 3 E D I b3b?254 0004542 1 \| 2N5336 MOTOROLA SEMICONDUCTOR thru TECHNICAL DATA 2N5339 MEDIUM-POWER NPN SILICO N TRAN SISTO RS 5 AM PERE POWER TRAN SISTORS NPN SILICO N . . . designed for switching and wide band amplifier applications.	OCR Scan	2N5336 2N5339 2N6190 2N6193 LT 5337 2N5339 2N6193, Motorola LN 7904 2n5337 2n5338 NS338	PDF
V5592 Abstract: TOP-66 5598 transistor 8617 diode DIN 53505 marking code to3 diode marking J5P SOT TO-126 mounting V7387 8630F Text: ASSMANN Die-cast-Heatsinks Electronic C om ponen ts Thermal Conductive Ceramic Pads Technical data Applications: Electro- and electronic-industry i. e. computers, TV sets, VTR, medical equipment, measuring instruments, motor car- and machineindustry, photovoltanie, aviation.	OCR Scan		PDF

TRANSISTOR C 5339 Search Results

TRANSISTOR C 5339 Result Highlights (5)

TRANSISTOR C 5339 Datasheets Context Search

JE 800 transistor

FCK 111

IRG7PH42U-EP

IRG7PH42UPBF

Untitled

irg7ph42upbf

b0958

RM4T

2SD1518

Untitled

ni3ti

Transistor BC 227

Untitled

HMXR-5001

TCA160

stk*400-050

STK401-340

NKT677

Germanium drift transistor

Untitled

2n5339

stk*470 090

LT 5337

V5592