Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR C SERIES Search Results

    TRANSISTOR C SERIES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C SERIES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ansley idc ribbon connector

    Abstract: augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3
    Text: Tyco/Augat PCB Connectors, Sockets, Plug Assemblies and Tooling Transistor Sockets 600 Series Ñ AG and CG Plug Adapter Assemblies c c c c c c c Polarization: Dot, Notch, Bump c Contact Plating: 30 µ" Gold per Mil-G-45204 The Augat Transistor sockets utilize hi-rel machined outer sleeves and gold plated inner contacts assembled into a low


    Original     		PDF Mil-G-45204 profi00-499 609-XX06 609-XX ansley idc ribbon connector augat plug adapter assembly socket 8723 transistor ansley ribbon connector 16 pin ansley female connector ansley cable flat flexible Augat 10 Pin round Socket transistor 8926 round female pin header 3-1437515-3

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 1000hrs 15min 20sec 1000cycle 96hrs

    SOT-23

    Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
    Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2


    Original     		PDF BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C 1000hrs 15min) 15min 20sec 1000cycle 96hrs SOT-23 TRANSISTOR SMD fr 21 smd transistor ds 65

    6002 transistor

    Abstract: QCA50B QCA50B40 QCA50B60 QCB50A40 QCB50A60 UUE76102
    Text: 0002171 IDT TRANSISTOR M ODULE QCA50B/QCB50A40/60 UUE76102 M Q C A 5 0 B and Q C B 5 0 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA50B/QCB50A40/60 QCA50B QCB50A 400/600V UUE76102 0CA50B QCA50B40 0D02172 50A40 b0B60 6002 transistor QCA50B60 QCB50A40 QCB50A60

    F1K marking

    Abstract: No abstract text available
    Text: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


    OCR Scan     		PDF BCW61A/B/C/D KS5086 BCW61 F1K marking

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6519 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation


    OCR Scan     		PDF 2N6519 2N6520

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation


    OCR Scan     		PDF 2N6518 2N6520

    BCW General Purpose Transistor

    Abstract: l9902
    Text: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation


    OCR Scan     		PDF BCW60A/B/C/D BCW General Purpose Transistor l9902

    Untitled

    Abstract: No abstract text available
    Text: BCX70H NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


    OCR Scan     		PDF BCX70H KS3904

    L9902

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


    OCR Scan     		PDF BCX70J KS3904 L9902

    Untitled

    Abstract: No abstract text available
    Text: BCX70K NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage E m itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature


    OCR Scan     		PDF BCX70K KS3904

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR 2N6520 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C Characteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector D issipation


    OCR Scan     		PDF 2N6520

    Untitled

    Abstract: No abstract text available
    Text: KST4125 PNP EPITAXIAL SILICON TRANSISTOR G ENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic S ym bol C ollector-Base Voltage C ollecto r-E m itte r Voltage Em itter-Base Voltage C ollector C urrent C o llecto r Dissipation


    OCR Scan     		PDF KST4125 OT-23 KST3906

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BCW29 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector C urrent Junction Tem perature Storage Tem perature


    OCR Scan     		PDF BCW29 KST5088

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSP12 DARLINGTON TRANSISTOR • C ollector-E m itter Voltage: V C e s = 2 0 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit V C ollector-E m itter Voltage


    OCR Scan     		PDF KSP12

    Untitled

    Abstract: No abstract text available
    Text: • TRANSISTOR MODULE 7«maM3 0005177 357 QCA75A/QCB75A40/60 UL;E76102 M and Q C B 7 5 A are dual Darlin­ gton power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode.


    OCR Scan     		PDF QCA75A/QCB75A40/60 E76102 A75A60 B75A40 B75A60 QCA75A/QCB75A

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200AA120 Q C A 200 A A 12 0 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA200AA120 7T11243 0QD2D13

    Untitled

    Abstract: No abstract text available
    Text: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • C ollector-E m itter Voltage: V Ceo = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Col lector-Base Voltage C ollector-E m itter Voltage


    OCR Scan     		PDF KSP8097

    sc5-S

    Abstract: RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021
    Text: Transistor RT1 P I 44X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION RT1P144X is a OUTLINE DRAWING one chip transistor R T iP i ^ C R T 1 P 144U with b u ilt-in bias resistor.NPN type is RT1NM4X UNIT: mm


    OCR Scan     		PDF HT1P144X RT1N144X 47kft) RT1P144TÃ RT1P144C RT1P144M O-236 sc5-S RT1P144C RT1P144M RT1P144T2 RT1N144X RT1P144S RT1P144U ml021

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA75AA100 UL;E76102 M Q C A 75A A 100 is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated


    OCR Scan     		PDF QCA75AA100 E76102 100msec 00V-----IB,

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA200A40/60 Q C A 2 00 A is a dual Darlington power transistor module which has series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semicon­


    OCR Scan     		PDF QCA200A40/60 400/600V QCA200A

    Ksp44 data

    Abstract: transistor KSP44 data
    Text: KSP44M/45M NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAG E TRANSISTOR • C ollector-E m itter Voltage: VCeo=KSP44: 400V KSP45: 350V • C ollector D issipation: Pc m ax =1.2W TO -126 ABSO LU TE M AXIMUM RATINGS (TA=25°C) C haracteristic C ollector Base Voltage


    OCR Scan     		PDF KSP44M/45M KSP44: KSP45: KSP44 KSP45 Ksp44 data transistor KSP44 data

    9962 GH

    Abstract: L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode
    Text: DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT MILITARY TEMPERATURE RANGE: - 5 5 ° C to + 1 2 5 ° C GENERAL DESCRIPTION The Fairchild 9930 series of Diode Transistor Micrologic is a member of the Compatible Current Sinking Logic CCSL family designed for use in


    OCR Scan     		PDF O-116) 0035j^ U3IXXXX51X U6AXXXX51X 9962 GH L9932 l9933 9945 A transistor DTL 9930 9936 GN 9962 6H fairchild 9930 integrated circuits data inverter circuit diagram 9936 FD100 diode

    Untitled

    Abstract: No abstract text available
    Text: KSP6520/6521 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR T O -92 • C ollector-E m itter Voltage: V C e o = 2 5 V • C ollector D issipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Rating Unit Col lector-Base Voltage


    OCR Scan     		PDF KSP6520/6521