TRANSISTOR C123 Search Results

TRANSISTOR C123 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR C123 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C1232 Abstract: cox 15um Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold	Original	C1232 100x10 100x100 100x1 65x65 C1232 cox 15um	PDF
C1232 Abstract: transistor C123 Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold	Original	C1232 100x10 100x100 100x1 65x65 C1232 C1232-4-98 transistor C123	PDF
C1232 Abstract: cox 15um cmos transistor 0.35 um Text: ISO 9001 Registered Process C1232 CMOS 1.2µm EEPROM with Lateral PNP Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Saturation Current Punch Through Voltage Poly Field Threshold	Original	C1232 100x10 100x100 100x1 65x65 C1232 cox 15um cmos transistor 0.35 um	PDF
640 TRANSISTOR NPN Abstract: C1231 c123* transistor Text: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N	Original	C1231 HVPR0N100 65x65 640 TRANSISTOR NPN C1231 c123* transistor	PDF
C1231 Abstract: No abstract text available Text: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N	Original	C1231 65x65 C1231	PDF
C1231 Abstract: cox 15um Text: ISO 9001 Registered Process C1231 HV BiCMOS 1.2µm 30V Double Metal - Double Poly Electrical Characteristics T=25oC Unless otherwise noted Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSP ON Resistance HVPR0N	Original	C1231 C1231-4-98 65x65 C1231 cox 15um	PDF
transistor k 2761 Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1230 C1230 transistor k 2761 k 2761 transistor poly silicon resistor hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um	PDF
transistor k 2761 Abstract: C1230 C1206 Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1230 C1230 C1230-4-98 transistor k 2761 C1206	PDF
C1230 Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206 Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage	Original	C1230 C1230 transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206	PDF
DTC123ESA Abstract: C123ES DTC123EE DTC123EKA DTC123EM DTC123EUA SC-72 T106 T146 Text: DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123EM / DTC123EE / DTC123EUA / DTC123EKA / DTC123ESA zExternal dimensions (Unit : mm) zApplications Inverter, Interface, Driver	Original	DTC123EM DTC123EE DTC123EUA DTC123EKA DTC123ESA 100mA DTC123ESA C123ES SC-72 T106 T146	PDF
transistor c124 Abstract: C124 E S W transistor IRGPC40FD2 C-123 C-118 Text: Previous Datasheet Index Next Data Sheet PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes	Original	IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C124 E S W transistor IRGPC40FD2 C-123 C-118	PDF
transistor c124 Abstract: transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118 Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	Original	IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 transistor c119 transistor 45 f 122 C124 E S W transistor ge c122 C-123 C-118 IRGPC40FD2 GE C118	PDF
transistor c124 Abstract: C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor Text: PD - 9.1113 IRGPC40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	Original	IRGPC40FD2 10kHz) O-247AC C-124 transistor c124 C-118 C-123 IRGPC40FD2 C124 E S W transistor C124 E S S transistor	PDF
C123JS Abstract: C123 DTC123JKA transistor e42 DTC123JE DTC123JM DTC123JSA DTC123JUA SC-72 T106 Text: DTC123JM / DTC123JE / DTC123JUA / DTC123JKA / DTC123JSA Transistor 100mA / 50V Digital transistors with built-in resistors DTC123JM / DTC123JE / DTC123JUA DTC123JKA / DTC123JSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the	Original	DTC123JM DTC123JE DTC123JUA DTC123JKA DTC123JSA 100mA DTC123JUA C123JS C123 transistor e42 DTC123JSA SC-72 T106	PDF

sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
BUX21 Abstract: SGS-Thomson BUX21 Text: • I 7 ^ 2 3 7 o p a a ^ B ? a ■ H ~ " - 3 3 - i s _ r = 7 SCS-THOMSON * 7# B U X 21 S G S- TH OMSON 3ÜE D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX21 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, inten	OCR Scan	BUX21 BUX21 10HHz SGS-Thomson BUX21	PDF
transistor c1237 Abstract: TSD250N05V Text: 3DE » • 7 cì 2 c1237 Q03QLi02 1 , - SGS-THOMSON z u s g TSD250N05F TSD250N05V IQJOITGMOtgS n - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE S-THOMSON TENTATIVE DATA TYPE TSD250N05F/V V dss RDS on Id 50 V 0.004 n 250	OCR Scan	c1237 Q03QLi02 TSD250N05F TSD250N05V TSD250N05F/V O-240) PC-029« transistor c1237 TSD250N05V	PDF
Untitled Abstract: No abstract text available Text: 3ÜE ]> • 7 T 2 C1237 DG3Q7S2 b ■ _ - 15 r z 7 SCS-THOMSON Ä 7# — IRFK6H450 ~"s T T ^ thomsÖiT - N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR MODULE ADVANCE DATA TYPE V d ss IRFK6H450 500 V RDS on Id 0.067 n 66 A . . . . HIGH CURRENT POWER MODULE	OCR Scan	IRFK6H450 SCM720 O-240) PC-029«	PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF
SGSP579 Abstract: No abstract text available Text: 3QE D • T ^ E a? 0030071 4 ■ -\3 ^ s r- SGS-THOMSON HLiÊTTMôÊi s 6 S TH0MS0N SGSP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP579 VDSS 500 V f*DS on 0.7 Q •d 9A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE -9A FOR UP TO 350WSMPS	OCR Scan	SGSP579 350WSMPS 100KHZ SGSP579	PDF
STHV82 Abstract: STHV82FI Text: T'îS'îaS? £ t7 0 0 4 5 ^ 0 357 • S G T H SGS-THOMSON L i « ! STHV82 STHV82FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV82 STHV82FI ■ . . . . . ■ V dss R DS on Id 800 V 800 V <2Q < 2 Ü 5.5 A 3.6 A TYPICAL RDS(on) = 1.65 £2	OCR Scan	STHV82 STHV82FI 7T5T237 STHV82/FI STHV82 STHV82FI	PDF
23N05 Abstract: stk 0055 23n06 23N05L Text: 7 ^ 2 ^ 2 3 7 O O M b lB f l S 12 • S G T H STK23N05L STK23N06L SGS-THOMSON *5 7 RÆQ i©[EL[MM©[KS N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STK23N 05L STK23N06L . . . . . . ■ . . V dss RDS on Id 50 V 60 V	OCR Scan	STK23N05L STK23N06L STK23N OT-82 OT-194 TK23N05L TK23N06L 0S970 7T2R237 23N05 stk 0055 23n06 23N05L	PDF
Untitled Abstract: No abstract text available Text: fZ T ^ 7# S G S -T H O M S O N DälD e^ ElLllOT@IDei S TB 6 N A 60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V STB6NA60 d ss 600 V R d Id S (o d < 1 . 2 6.5 A • . . . . . . . TYPICAL RDS(on) *= 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STB6NA60 O-262) O-263) O-262 O-263	PDF

TRANSISTOR C123 Search Results

TRANSISTOR C123 Result Highlights (5)

TRANSISTOR C123 Datasheets Context Search

C1232

C1232

C1232

640 TRANSISTOR NPN

C1231

C1231

transistor k 2761

transistor k 2761

C1230

DTC123ESA

transistor c124

transistor c124

transistor c124

C123JS

sx3704

BUX21

transistor c1237

Untitled

transistor 2N4

3TE445

SGSP579

STHV82

23N05

Untitled