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    TRANSISTOR C2500 B Search Results

    TRANSISTOR C2500 B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    transistor c2500

    Abstract: transistor C2500 B c2500 transistor c2500 Transistor 2sc2500 2SC2500
    Text: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2500 transistor c2500 transistor C2500 B c2500 transistor c2500 Transistor 2sc2500 2SC2500

    transistor c2500

    Abstract: 2SC2500 c2500 transistor 2sc2500 transistor C2500 B
    Text: 2SC2500 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2500 Strobe Flash Applications Medium-Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.), (VCE = 1 V, IC = 2 A)


    Original     		PDF 2SC2500 transistor c2500 2SC2500 c2500 transistor 2sc2500 transistor C2500 B