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    TRANSISTOR C2703 Search Results

    TRANSISTOR C2703 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C2703 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c2703

    Abstract: C2703 2SC2703
    Text: 2SC2703 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2703 Audio Power Amplifier Applications • Unit: mm High DC current gain: hFE = 100 to 320 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SC2703 O-92MOD transistor c2703 C2703 2SC2703

    transistor c2703

    Abstract: c2703
    Text: 2SC2703 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2703 Audio Power Amplifier Applications • Unit: mm High DC current gain: hFE = 100 to 320 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SC2703 O-92MOD transistor c2703 c2703

    C2703

    Abstract: transistor c2703 2SC2703
    Text: 2SC2703 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2703 Audio Power Amplifier Applications • Unit: mm High DC current gain: hFE = 100 to 320 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SC2703 O-92MOD C2703 transistor c2703 2SC2703

    transistor c2703

    Abstract: C2703 2SC2703
    Text: 2SC2703 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2703 Audio Power Amplifier Applications • Unit: mm High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30


    Original
    PDF 2SC2703 O-92MOD transistor c2703 C2703 2SC2703