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    TRANSISTOR C3668 Search Results

    TRANSISTOR C3668 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR C3668 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor c3668

    Abstract: c3668 2SC3668 2-7D101A 2SA1428
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		2SC3668 2SA1428. transistor c3668 c3668 2SC3668 2-7D101A 2SA1428 PDF

    c3668

    Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		2SC3668 2SA1428. c3668 transistor c3668 2-7D101A 2SA1428 2SC3668 PDF

    transistor c3668

    Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		2SC3668 2SA1428. transistor c3668 c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668 PDF

    c3668

    Abstract: transistor c3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


    Original     		2SC3668 2SA1428. 2-7D101A c3668 transistor c3668 PDF